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Author |
Смирнов, Константин Владимирович |
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Title |
Энергетическая релаксация электронов в 2D-канале гетеропереходов GAAS/ALGAAS и транспортные процессы в структурах полупроводник-сверхпроводник на их основе |
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Manuscript |
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Year |
2000 |
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М. МПГУ |
Abbreviated Journal |
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2DEG, AlGaAs/GaAs heterostructures, NbN films |
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Abstract |
Диссертация посвящена изучению электрон-фононного взаимодействия в двумерном электронном газе, образующемся на границе раздела полупроводников AlGaAs и GaAs, а также созданию на основе гетероперехода GaAs/AlGaAs и сверхпроводника NbN гибридных структур сверхпроводник-полупроводник-сверхпроводник и изучению их электрофизических свойств. |
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Москва, МПГУ |
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Ph.D. thesis |
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1830 |
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Author |
Gerecht, E.; Musante, C.F.; Zhuang, Y.; Ji, M.; Yngvesson, K.S.; Goyette, T.; Waldman, J. |
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Title |
NbN hot electron bolometric mixer with intrinsic receiver noise temperature of less than five times the quantum noise limit |
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Conference Article |
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Year |
2000 |
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Proc. IMS |
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2 |
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1007-1010 |
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Keywords |
HEB mixer |
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In recent years, improvements in device development and quasi-optical coupling techniques utilizing planar antennas have led to a significant achievement in low noise receivers for the edges of the submillimeter frequency regime. Hot electron bolometric (HEB) receivers made of thin superconducting films such as NbN have produced a viable option for instruments designed to measure the molecular spectra for astronomical applications as well as in remote sensing of the atmosphere in the THz regime. This paper describes an NbN HEB mixer with intrinsic DSB receiver noise temperature of at most five times the quantum noise limit at frequencies as high as 2.24 THz |
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477 |
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Author |
Gundlach, K. H.; Schicke, M. |
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Title |
SIS and bolometer mixers for terahertz frequencies |
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Journal Article |
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Year |
2000 |
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Supercond. Sci. Technol |
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13 |
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181-187 |
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RPLAB @ s @ sis_Gundlach_2000 |
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302 |
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Manus, M. K. Mc; Kash, J. A.; Steen, S. E.; Polonsky, S.; Tsang, J.C.; Knebel, D. R.; Huott, W. |
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PICA: Backside failure analysis of CMOS circuits using picosecond imaging circuit analysis |
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Journal Article |
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Year |
2000 |
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Microelectronics Reliability |
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Microelectronics Reliability |
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40 |
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1353-1358 |
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SSPD, CMOS testing |
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Normal operation of complementary metal-oxide semiconductor (CMOS) devices entails the emission of picosecond pulses of light, which can be used to diagnose circuit problems. The pulses that are observed from submicron sized field effect transistors (FETs) are synchronous with logic state switching. Picosecond Imaging Circuit Analysis (PICA), a new optical imaging technique combining imaging with timing, spatially resolves individual devices at the 0.5 micron level and switching events on a 10 picosecond timescale. PICA is used here for the diagnostics of failures on two VLSI microprocessors. |
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1054 |
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Kawamura, Jonathan; Blundell, Raymond; Tong, C.-Y. Edward; Papa, D. Cosmo; Hunter, Todd R.; Paine, Scot.t. N.; Patt, Ferdinand; Gol'tsman, Gregory; Cherednichenko, Sergei; Voronov, Boris; Gershenzon, Eugene |
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Title |
Superconductive hot-electron bolometer mixer receiver for 800 GHz operation |
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Miscellaneous |
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Year |
2000 |
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IEEE Trans. Microwave Theory and Techniques |
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IEEE Trans. Microwave Theory and Techniques |
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48 |
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4 |
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683-689 |
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RPLAB @ s @ Kawamura_superconductivehot-electron |
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424 |
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