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| Author |
Bakhvalova, T.; Belkin, M. E.; Kovalyuk, V. V.; Prokhodtcov, A. I.; Goltsman, G. N.; Sigov, A. S. |
| Title |
Studying key principles for design and fabrication of silicon photonic-based beamforming networks |
Type |
Conference Article |
| Year |
2019 |
Publication |
PIERS-Spring |
Abbreviated Journal |
PIERS-Spring |
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Pages |
745-751 |
| Keywords |
silicon photonics, TriPleX platform |
| Abstract |
In the paper, we address key principles for computer-aided design and fabrication of silicon-photonics-based optical beamforming network selecting the optimal approach by simulation and experimental results. To clarify the consideration, the study is conducted on the example of a widely used binary switchable silicon-nitride optical beamforming network based on TriPleX platform. Comparison of simulation results and experimental studies of the prototype shows that the relative error due to technological imperfections does not exceed 3%. According to the estimation, such an error introduces insignificant distortion in the radiation pattern of the referred antenna array. |
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9017646 |
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1186 |
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Goltsman, G. N.; Shcherbatenko, M. L.; Lobanov, Y. V.; Kovalyuk, V. V.; Kahl, O.; Ferrari, S.; Korneev, A.; Pernice, W. H. P. |
| Title |
Superconducting nanowire single photon detector for coherent detection of weak optical signals |
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Abstract |
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2016 |
Publication |
LPHYS'16 |
Abbreviated Journal |
LPHYS'16 |
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1-2 |
| Keywords |
SSPD, SNSPD |
| Abstract |
Traditionally, photon detectors are operated in a direct detection mode counting incident photonswith a known quantum efficiency. This procedure allows one to detect weak sources of radiation but allthe information about its frequency is limited by the optical filtering/resonating structures used which arenot as precise as would be required for some practical applications. In this work we propose heterodynereceiver based on a photon counting mixer which would combine excellent sensitivity of a photon countingdetector and excellent spectral resolution given by the heterodyne technique. At present, Superconducting-Nanowire-Single-Photon-Detectors (SNSPDs) [1] are widely used in a variety of applications providing thebest possible combination of the sensitivity and speed. SNSPDs demonstrate lack of drawbacks like highdark count rate or autopulsing, which are common for traditional semiconductor-based photon detectors,such as avalanche photon diodes.In our study we have investigated SNSPD operated as a photon counting mixer. To fully understandits behavior in such a regime, we have utilized experimental setup based on a couple of distributedfeedback lasers irradiating at 1.5 micrometers, one of which is being the Local Oscillator (LO) and theother mimics the test signal [2]. The SNSPD was operated in the current mode and the bias currentwas slightly below of the critical current. Advantageously, we have found that LO power needed for anoptimal mixing is of the order of hundreds of femtowatts to a few picowatts, which is promising for manypractical applications, such as receiver matrices [3]. With use of the two lasers, one can observe thevoltage pulses produced by the detected photons, and the time distribution of the pulses reproduces thefrequency difference between the lasers, forming power response at the intermediate frequency which canbe captured by either an oscilloscope (an analysis of the pulse statistics is needed) or by an RF spectrumanalyzer. Photon-counting nature of the detector ensures quantum-limited sensitivity with respect to theoptical coupling achieved. In addition to the chip SNSPD with normal incidence coupling, we use thedetectors with a travelling wave geometry design [4]. In this case a NbN nanowire is placed on the topof a Si3N4 nanophotonic waveguide, thus increasing the efficient interaction length. For this reason it ispossible to achieve almost complete absorption of photons and reduce the detector footprint. This reducesthe noise of the device together with the expansion of the bandwidth. Integrated device scheme allowsus to measure the optical losses with high accuracy. Our approach is fully scalable and, along with alarge number of devices integrated on a single chip can be adapted to the mid and far IR ranges wherephoton-counting measurement may be beneficial as well [5].Acknowledgements: This work was supported in part by the Ministry of Education and Science of theRussian Federation, contract No. 14.B25.31.0007 and by RFBR grant No. 16-32-00465. |
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1220 |
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Saveskul, N. A.; Titova, N. A.; Baeva, E. M.; Semenov, A. V.; Lubenchenko, A. V.; Saha, S.; Reddy, H.; Bogdanov, S. I.; Marinero, E. E.; Shalaev, V. M.; Boltasseva, A.; Khrapai, V. S.; Kardakova, A. I.; Goltsman, G. N. |
| Title |
Superconductivity behavior in epitaxial TiN films points at surface magnetic disorder |
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Miscellaneous |
| Year |
2019 |
Publication |
arXiv |
Abbreviated Journal |
arXiv |
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1-10 |
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We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of in the residual resistivity, which becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such a high quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of ∼1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films. |
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no |
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1278 |
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Tovpeko, N. A.; Trifonov, A. V.; Semenov, A. V.; Antipov, S. V.; Kaurova, N. S.; Titova, N. A.; Goltsman, G. N. |
| Title |
Bandwidth performance of a THz normal metal TiN bolometer-mixer |
Type |
Conference Article |
| Year |
2019 |
Publication |
Proc. 30th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 30th Int. Symp. Space Terahertz Technol. |
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Pages |
102-103 |
| Keywords |
TiN normal metal bolometer, NMB |
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We report on the bandwidth performance of the normal metal TiN bolometer-mixer on top of an Al 2 O 3 substrate, which is capable to operate in a wide range of bath temperatures from 77 K – 300 K. The choice of the combination TiN / Al 2 O 3 is related to an advanced heat transport between the film and the substrate in this pair and the sufficient temperature coefficient of resistance. The data were taken at 132.5 – 145.5 GHz with two BWOs as a signal and an LO source. Measurements were taken on TiN films of different thickness starting from 20 nm down to 5 nm coupled into a spiral Au antenna, which improves matching of incoming radiation with the thin TiN fim. Our experiments demonstrate effective heat coupling from a TiN thin film to an Al 2 O 3 substrate (111) boosting gain bandwidth (GB) of TiN bolometer up to 6 GHz for 5 nm thin film. Current results indicate weak temperature dependence of GB on the bath temperature of the TiN bolometer. Theoretical estimations of GB performance meet with experimental data for 5 nm thin TiN films. |
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1279 |
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Korneeva, Y. P.; Vodolazov, D. Y.; Semenov, A. V.; Florya, I. N.; Simonov, N.; Baeva, E.; Korneev, A. A.; Goltsman, G. N.; Klapwijk, T. M. |
| Title |
Optical single photon detection in micron-scaled NbN bridges |
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Miscellaneous |
| Year |
2018 |
Publication |
arXiv |
Abbreviated Journal |
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Issue |
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Pages |
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SSPD |
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We demonstrate experimentally that single photon detection can be achieved in micron-wide NbN bridges, with widths ranging from 0.53 μm to 5.15 μm and for photon-wavelengths from 408 nm to 1550 nm. The microbridges are biased with a dc current close to the experimental critical current, which is estimated to be about 50 % of the theoretically expected depairing current. These results offer an alternative to the standard superconducting single-photon detectors (SSPDs), based on nanometer scale nanowires implemented in a long meandering structure. The results are consistent with improved theoretical modelling based on the theory of non-equilibrium superconductivity including the vortex-assisted mechanism of initial dissipation. |
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Duplicated as 1303 |
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1312 |
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Tretyakov, Ivan; Kaurova, N.; Voronov, B. M.; Goltsman, G. N. |
| Title |
About effect of the temperature operating conditions on the noise temperature and noise bandwidth of the terahertz range NbN hot-electron bolometers |
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Abstract |
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2018 |
Publication |
Proc. 29th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 29th Int. Symp. Space Terahertz Technol. |
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Issue |
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Pages |
113 |
| Keywords |
NbN HEB mixer |
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Results of an experimental study of the noise temperature (Tn) and noise bandwidth (NBW) of the superconductor NbN hot-electron bolometer (HEB) mixer as a function of its temperature (Tb) and NbN bridge length are presented. It was determined that the NBW of the mixer is significantly wider at temperatures close to the critical ones (Tc) than are values measured at 4.2 K. The NBW of the mixer measured at the heterodyne frequency of 2.5 THz at temperature Tb close to Tc was ~13 GHz, as compared with 6 GHz at Tb = 4.2 K. This experiment clearly demonstrates the limitation of the thermal flow from the NbN bridge at Tb ≪ Tc for mixers manufactured by the in situ technique. This limitation is close in its nature to the Andreev reflection on the superconductor/metal boundary. In this case, the noise temperature of the studied mixer increased from 1100 to 3800 K. |
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1313 |
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Sidorova, M. V.; Kozorezov, A. G.; Semenov, A. V.; Korneev, A. A.; Chulkova, G. M.; Korneeva, Y. P.; Mikhailov, M. Y.; Devizenko, A. Y.; Goltsman, G. N. |
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Non-bolometric bottleneck in electron-phonon relaxation in ultra-thin WSi film |
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Miscellaneous |
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2018 |
Publication |
arXiv |
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WSi films, diffusion constant, SSPD, SNSPD |
| Abstract |
We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in tau{e-ph} = 140-190 ps at TC = 3.4 K, supporting the results of earlier measurements by independent techniques. |
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Duplicated as 1305 |
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1341 |
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Minaeva, O.; Divochiy, A.; Korneev, A.; Sergienko, A. V.; Goltsman, G. N. |
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High speed infrared photon counting with photon number resolving superconducting single-photon detectors (SSPDs) |
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Conference Article |
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2009 |
Publication |
CLEO/Europe – EQEC |
Abbreviated Journal |
CLEO/Europe – EQEC |
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SSPD, SNSPD |
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A review of development and characterization of the nanostructures consisting of several meander sections, all connected in parallel was presented. Such geometry leads to a significant decrease of the kinetic inductance, without a decrease of the SSPD active area. A new type of SSPDs possess the QE of large-active- area devices, but, simultaneously, allows achieving short response times and the GHz-counting rate. This new generation of superconducting detectors has another significant advantage for quantum key distribution, they have a photon number resolving capability and can distinguish more photons. |
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1399 |
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Baryshev, A. M.; Wild, W.; Likhachev, S. F.; Vdovin, V. F.; Goltsman, G. N.; Kardashev, N. S. |
| Title |
Main parameters and instrumentation of Millimetron space mission |
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Abstract |
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2009 |
Publication |
Proc. 20th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 20th ISSTT |
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108 |
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SVLBI, Millimetron space observatory |
| Abstract |
Millimetron (official RosKosmos name ”Spectrum-M”) is a part of ambitious program called Spectrum intended to cover the whole electromagnetic spectrum with world class facilities. It is an approved mission included in Russian space program with the launch date in 2017..2019 time frame. The Millimetron satellite has a deployable 12 m diameter antenna with inner solid 4..6 m dish and a rim of petals. The mirror design is largely based on Radioastron mission concept that will be launched in 2009. If the antenna is passively cooled by radiation to open space, it would operate at approx. 50 K surface temperature, due to presence of a deployable three layer radiation screen. As a goal, there is a consideration of active cooling of antenna to 4 K, but this will depend on resources available to the project. Lagrangian libration point L2 considered for Millimetron orbit. There are four groups of scientific instruments envisioned: SVLBI instruments Space-Earth VLBI. It will allow to achieve unprecedented spatial resolution. Millimetron mission will attempt to achieve a mm/submm wave SVLBI. For that purpose, a SVLBI instrument covering selected ALMA bands and a standard VLBI band is envisioned, accompanied by a maser reference oscillator, a data digitizing and memory system, and a high speed data transmission link to ground. The ALMA bands can be extended to cover water lines if detector technology allows. Type of detector – heterodyne. Photometer/polarimeter. Recent progress in direct detector cameras with low spectral resolution, allows to propose a large format (5-10 kPixel) photometer camera on board of Millimetron mission. This camera can cover 0.1 – 2 THz region (with adequate amount of pixels per each subband). Wide band moderate resolution imaging spectrometer. Wide band moderate R = 1000 imaging spectrometer type instrument similar to SPICA SAFARI is planned, taking advantage of large cooled dish. It will cover the adequate spectral range allowable by antenna and will also work below 1 THz, as no ground instrument can have a cold main dish. High resolution spectrometer. For high resolution spectroscopy a heterodyne instrument is proposed, conceptually similar to HIFI on Herschel. This instrument will cover interesting frequency spots in 0.5..4 THz frequency range (using central part of antenna for higher frequency). It is sure that advances in LO and mixer technology will allow this frequency coverage. |
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1401 |
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Goltsman, G. N. |
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Submillimeter superconducting receivers for astronomy, atmospheric studies and other applications |
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Abstract |
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2006 |
Publication |
31nd IRMW / 14th ICTE |
Abbreviated Journal |
31nd IRMW / 14th ICTE |
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177 |
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Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics |
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1443 |
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Bryerton, E.; Percy, R.; Bass, R.; Schultz, J.; Oluleye, O.; Lichtenberger, A.; Ediss, G. A.; Pan, S. K.; Goltsman, G. N. |
| Title |
Receiver measurements of pHEB beam lead mixers on 3-μm silicon |
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Conference Article |
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2005 |
Publication |
Proc. 30th IRMMW / 13th THz |
Abbreviated Journal |
Proc. 30th IRMMW / 13th THz |
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271-272 |
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We report on receiver noise measurement results of phonon-cooled HEB beam lead mixers on 3 μm thick silicon. This type of ultra-thin mixer chip with integrated beam leads allows easy assembly into a block and holds great promise for array integration. Receiver measurements from 600-720 GHz are presented with a minimum noise temperature of 500 K at 666 GHz. These results verify the mixer performance of the SOI processing techniques allowing for further design and integration of SOI pHEB mixers in receivers operating above 1 THz. |
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Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics |
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1460 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
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Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range |
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Conference Article |
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1997 |
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Proc. 4-th Int. Semicond. Device Research Symp. |
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Proc. 4-th Int. Semicond. Device Research Symp. |
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55-58 |
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2DEG, AlGaAs/GaAs heterostructures |
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1602 |
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Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
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Investigation of population and ionization of donor excited states in Ge |
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Conference Article |
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1976 |
Publication |
Physics of Semiconductors |
Abbreviated Journal |
Physics of Semiconductors |
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631-634 |
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Ge, donor excited states |
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Amsterdam |
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North-Holland Publishing Co. |
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1732 |
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Averkin, A. S.; Shishkin, A. G.; Chichkov, V. I.; Voronov, B. M.; Goltsman, G. N.; Karpov, A.; Ustinov, A. V. |
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Tunable frequency-selective surface based on superconducting split-ring resonators |
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Conference Article |
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2014 |
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8th Metamaterials |
Abbreviated Journal |
8th Metamaterials |
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superconducting split-ring resonators |
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We study a possibility to use the 2D superconducting metamaterial as a tunable frequency-selective surface (FSS). The proposed FSS is made of sub-wavelength size (l/14) metamaterial unit cells, where a split-ring resonator is embedded in a small iris aperture in a metal plane. The split-ring resonator is made of NbN film, and its resonance frequency is tuned by the temperature of the sample, changing the kinetic inductance of NbN film. The Ansoft HFSS simulation predicts the FSS tuning range of about 10-20 %. The developed superconducting FSS may be used as a tunable band-pass filter or modulator. |
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Copenhagen, Denmark |
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8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics – Metamaterials |
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no |
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1749 |
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| Author |
Semenov, A. V.; Devyatov, I. A.; Korneev, A. A.; Smirnov, K. V.; Goltsman, G. N.; Melnikov, A. P. |
| Title |
Derivation of expression for thermodynamic potential of “dirty” superconductor |
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Journal Article |
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2012 |
Publication |
Rus. J. Radio Electron. |
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Rus. J. Radio Electron. |
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4 |
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| Keywords |
dirty superconductor, Usadel theory, thermodynamic potential |
| Abstract |
We derive a formula for thermodynamic potential of dirty superconductor which express it via isotropic quasiclassical Green functions of Usadel theory. Our result allows unify description of dynamic processes and fluctuations in superconducting nano-electronic devices. |
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Russian |
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7 pages |
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no |
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1824 |
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