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Merkel, H. F.; Yagoubov, P. A.; Kroug, M.; Khosropanah, P.; Kollberg, E. L.; Gol’tsman, G. N.; Gershenzon, E. M. |
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Title |
Noise temperature and absorbed LO power measurement methods for NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies |
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Conference Article |
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Year |
1998 |
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Proc. 28th European Microwave Conf. |
Abbreviated Journal |
Proc. 28th European Microwave Conf. |
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1 |
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294-299 |
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NbN HEB mixers |
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In this paper the absorbed LO power requirements and the noise performance of NbN based phonon-cooled hot electron bolometric (HEB) quasioptical mixers are investigated for RF frequencies in the 0.55-1.1 range The minimal measured DSB noise temperatures are about 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz and 1250 K at 1.1 THz. The increase in noise temperature at 1.1THz is attributed to water absorption. The absorbed LO power is measured using a calorimetric approach. The results are subsequently corrected for lattice heating. These values are compared to results of a novel one dimensional hot spot mixer models and to a more traditional isotherm method which tends to underestimate the absorbed LO power for small bias powers. Typically a LO power between 50nW and 100nW is needed to pump the device to the optimal operating point. |
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28th European Microwave Conference |
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1580 |
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Chen, J.; Kang, L.; Jin, B. B.; Xu, W. W.; Wu, P. H.; Zhang, W.; Jiang, L.; Li, N.; Shi, S. C.; Gol'tsman, G. N. |
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Title |
Properties of terahertz superconducting hot electron bolometer mixers |
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Journal Article |
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Year |
2008 |
Publication |
Int. J. Terahertz Sci. Technol. |
Abbreviated Journal |
Int. J. Terahertz Sci. Technol. |
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Volume |
1 |
Issue |
1 |
Pages |
37-41 |
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Keywords |
NbN HEB mixers, noise temperature |
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A quasi-optical superconducting niobium nitride (NbN) hot electron bolometer (HEB) mixer has been fabricated and measured in the terahertz (THz) frequency range of 0.5~2.52 THz. A receiver noise temperature of 2000 K at 2.52 THz has been obtained for the mixer without corrections. Also, the effect of a Parylene C anti-reflection (AR) coating on the silicon (Si) lens has been studied. |
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1417 |
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Jiang, L.; Zhang, W.; Yao, Q. J.; Lin, Z. H.; Li, J.; Shi, S. C.; Svechnikov, S. I.; Vachtomin, Y. B.; Antipov, S. V.; Voronov, B. M.; Kaurova, N. S.; Gol'tsman, G. N. |
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Title |
Characterization of a quasi-optical NbN superconducting hot-electron bolometer mixer |
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Conference Article |
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2005 |
Publication |
Proc. PIERS |
Abbreviated Journal |
Proc. PIERS |
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1 |
Issue |
5 |
Pages |
587-590 |
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Keywords |
NbN HEB mixers |
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In this paper, we report the performance of a quasi-optical NbN superconducting HEB (hot electron bolome-ter) mixer measured at 500 GHz. The quasi-optical NbN superconducting HEB mixer is cryogenically cooled bya 4-K close-cycled refrigerator. Its receiver noise temperature and conversion gain are thoroughly investigatedfor different LO pumping levels and dc biases. The lowest receiver noise temperature is found to be approxi-mately 1200 K, and reduced to about 445 K after correcting theloss of the measurement system. The stabilityof the mixer’s IF output power is also demonstrated. |
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Hangzhou, China |
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1931-7360 |
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Progress In Electromagnetics Research Symposium |
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1482 |
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Gol’tsman, G. N. |
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Terahertz technology in Russia |
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Conference Article |
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Year |
1994 |
Publication |
24th European Microwave Conf. |
Abbreviated Journal |
24th European Microwave Conf. |
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1 |
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113-121 |
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Keywords |
BWO, HEB mixers |
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The presentation consider the parameters and operating peculiarities of unique microwave generators of the terahertz range which have been created in Russia – the backward wave oscillators – as well as certain devices based on these generators, such as high resolution. spectrometers and time-resolving spectrometers with picosecond temporal resolution. Most resent BWO-based studies are illustrated by a project devoted to superconductive hot-electron. bolometers which are of great independent value for the terahertz technology as high-sensitive picosecond detectors and low noise broad-band mixers. |
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24th European Microwave Conference |
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1635 |
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Tong, C.-Y. E.; Meledin, D.; Loudkov, D.; Blundell, R.; Erickson, N.; Kawamura, J.; Mehdi, I.; Gol’tsman, G. |
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A 1.5 THz Hot-Electron Bolometer mixer operated by a planar diode based local oscillator |
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Conference Article |
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2003 |
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IEEE MTT-S Int. Microwave Symp. Digest |
Abbreviated Journal |
IEEE MTT-S Int. Microwave Symp. Digest |
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2 |
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751-754 |
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waveguide NbN HEB mixers |
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We have developed a 1.5 THz superconducting NbN Hot-Electron Bolometer mixer. It is operated by an all-solid-state Local Oscillator comprising of a cascade of 4 planar doublers following an MMIC based W-band power amplifier. The threshold available pump power is estimated to be 1 /spl mu/W. |
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Philadelphia, PA, USA |
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1516 |
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Antipov, S. V.; Vachtomin, Yu. B.; Maslennikov, S. N.; Smirnov, K. V.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Goltsman, G. N. |
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Noise performance of quasioptical ultrathin NbN hot electron bolometer mixer at 2.5 and 3.8 THz |
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Conference Article |
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Year |
2004 |
Publication |
Proc. 5-th MSMW |
Abbreviated Journal |
Proc. 5-th MSMW |
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2 |
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592-594 |
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NbN HEB mixers |
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To put space-based and airborne heterodyne instruments into operation at frequencies above 1 THz the superconducting NbN hot-electron bolometer (HEB) will be incorporated into heterodyne receiver as a mixer. At frequencies above 1.3 THz the sensitivity of the NbN HEB mixers outperform the one of the Schottky diodes and SIS-mixers, and the receiver noise temperature of the NbN HEB mixers increase with frequency. In this paper we present the results of the noise temperature measurements within one batch of NbN HEB mixers based on 3.5 mn thick superconducting NbN film grown on Si substrate with MgO buffer layer at the LO frequencies 2.5 THz and 3.8 THz. |
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Kharkov, Ukraine |
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The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828) |
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351 |
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Gerecht, E.; Musante, C.F.; Zhuang, Y.; Ji, M.; Yngvesson, K.S.; Goyette, T.; Waldman, J. |
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NbN hot electron bolometric mixer with intrinsic receiver noise temperature of less than five times the quantum noise limit |
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Conference Article |
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2000 |
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Proc. IMS |
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2 |
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1007-1010 |
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HEB mixer |
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In recent years, improvements in device development and quasi-optical coupling techniques utilizing planar antennas have led to a significant achievement in low noise receivers for the edges of the submillimeter frequency regime. Hot electron bolometric (HEB) receivers made of thin superconducting films such as NbN have produced a viable option for instruments designed to measure the molecular spectra for astronomical applications as well as in remote sensing of the atmosphere in the THz regime. This paper describes an NbN HEB mixer with intrinsic DSB receiver noise temperature of at most five times the quantum noise limit at frequencies as high as 2.24 THz |
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477 |
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Cherednichenko, S.; Yagoubov, P.; Il'in, K.; Gol'tsman, G.; Gershenzon, E. |
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Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers |
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Conference Article |
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1997 |
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Proc. 27th Eur. Microwave Conf. |
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2 |
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972-977 |
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HEB mixer, fabrication process |
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The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature. |
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Jerusalem, Israel |
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IEEE |
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27th Eur. Microwave Conf. |
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1075 |
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Svechnikov, S. I.; Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Y. B.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Y. P.; Kaurova, N. S.; Voronov, B. M.; Gol’tsman, G. N. |
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Superconducting hot electron bolometer mixer for middle IR range |
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Conference Article |
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2006 |
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Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
Abbreviated Journal |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
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2 |
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686-687 |
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IR NbN HEB mixer, detector, GaAs substrate |
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The developed directly lens coupled hot electron bolometer (HEB) mixer was based on 5 nm superconducting NbN deposited on GaAs substrate. The layout of the structure, including 30x20 mcm^2 active area coupled with a 50 Ohm coplanar line, was patterned by photolithography. The responsivity of the mixer was measured in a direct detection mode in the 25-64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 mum wavelength CW CO2 laser was utilized as a local oscillator. |
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4023440 |
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1297 |
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Vachtomin, Y. B.; Antipov, S. V.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Zhang, W.; Svechnikov, S. I.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Gol’tsman, G. N. |
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Quasioptical hot electron bolometer mixers based on thin NBN films for terahertz region |
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Conference Article |
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2006 |
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Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
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Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
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2 |
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688-689 |
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NbN HEB mixers |
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Presented in this paper are the performances of HEB mixers based on 2-3.5 nm thick NbN films integrated with log-periodic spiral antenna. Double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. Mixer gain bandwidth is 5.2 GHz. Local oscillator power is 1-3 muW for mixers with different active area |
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1445 |
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Вахтомин, Ю. Б.; Антипов, С. В.; Масленников, С. Н.; Смирнов, К. В.; Поляков, С. Л.; Чжан, В.; Свечников, С. И.; Каурова, Н. С.; Гришина, Е. В.; Воронов, Б. М.; Гольцман, Г. Н. |
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Квазиоптические смесители терагерцового диапазона на основе эффекта разогрева электронов в тонких пленках NbN |
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Conference Article |
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2006 |
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Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
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2 |
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688-689 |
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NbN HEB mixers |
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Представлены результаты измерения рактеристик смесителей на эффекте разогрева электронов в тонких сверхпроводниковых пленках NbN. Смесители были изготовлены на основе пленок NbN толщиной 2-3.5 нм осажденных на кремниевую подложку с буферным подсло- ем MgO. Смесительный элемент согласовывался с планар- ной логопериодической спиральной антенной. Лучшее зна- чение шумовой температуры приемника на основе NbN смесителя составило 1300 К и 3100 К на частотах гетеро- дина 2.5 TГц и 3.8 ТГц, соответственно. Максимальное зна- чение полосы преобразования, измеренной на частоте 900 |Ц, достигло значения 5.2 ГГц для смесителя изготовлен- ного из NbN пленки толщиной 2 нм. Оптимальная мощность Представлены результаты измерения ха- гетеродинного источника составила 1-3 мкВт для смесите- лей с различным объемом смесительного элемента. |
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Duplicated as 1445 |
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Maslennikov, S. N.; Morozov, D. V.; Ozhegov, R. V.; Smirnov, K. V.; Okunev, O. V.; Gol’tsman, G. N. |
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Imaging system for submillimeter wave range based on AlGaAs/GaAs hot electron bolometer mixers |
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Conference Article |
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2004 |
Publication |
Proc. 5-th MSMW |
Abbreviated Journal |
Proc. 5-th MSMW |
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2 |
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558-560 |
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AlGaAs/GaAs HEB mixers |
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Electromagnetic radiation of the submillimeter (SMM) range is dispersed and absorbed significantly less than infrared (IR) radiation when passing through different objects. That is the reason for the development of an SMM imaging system. In this paper, we discuss the design of an SMM heterodyne imager, based on a matrix of AlGaAs/GaAs heterostructure hot electron bolometer mixers (HEB) with relatively high (about 77 K) operating temperature. The predicted double side band (DSB) noise temperature is about 1000 K and optimal local oscillator (LO) power is about 1 /spl mu/W for such mixers, which seems to be quite prospective for an SMM heterodyne imager. |
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Kharkov, Ukraine |
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The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828) |
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1487 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Elantiev, A. I.; Karasik, B. S.; Semenov, A. D. |
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Millimeter and submillimeter wave range mixer based on electronic heating of superconducting films in the resistive state |
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1990 |
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Sov. Supercond. |
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Sov. Supercond. |
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3 |
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10 |
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1582-1597 |
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HEB mixers |
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Масленникова, А. В.; Рябчун, С. А.; Финкель, М. И.; Каурова, Н. С.; Исупова, А. А.; Воронов, Б. М.; Гольцман, Г. Н. |
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Широкополосные смесители на горячих электронах на основе NbN наноструктур |
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2011 |
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Труды Московского физико-технического института |
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Труды МФТИ |
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3 |
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2 |
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31-34 |
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HEB mixer |
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Мы приводим данные исследования полосы преобразования смесителей на горячих электронах (hot-electron bolometer, НЕВ), изготовленных на основе тонких пленок NbN. Зависимость полосы преобразования от длины смесительного элемента находится в прекрасном согласии с результатами теоретической модели HEB-смесителя, в котором энергетическая релаксация электронов одновременно происходит по двум каналам: фононному и диффузионному. |
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RPLAB @ gujma @ |
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Gol'tsman, G. N.; Karasik, B. S.; Okunev, O. V.; Dzardanov, A. L.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E. |
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NbN hot electron superconducting mixers for 100 GHz operation |
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1995 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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5 |
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2 |
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3065-3068 |
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NbN HEB mixers |
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NbN is a promising superconducting material for hot-electron superconducting mixers with an IF bandwidth larger than 1 GHz. In the 1OO GHz frequency range, the following parameters were obtained for 50 /spl Aring/ thick NbN films at 4.2 K: receiver noise temperature (DSB) /spl sim/1000 K; conversion loss /spl sim/10 dB; IF bandwidth /spl sim/1 GHz; and local oscillator power /spl sim/1 /spl mu/W. An increase of the critical current of the NbN film, increased working temperature, and a better mixer matching may allow a broader IF bandwidth up to 2 GHz, reduced conversion losses down to 3-5 dB and a receiver noise temperature (DSB) down to 200-300 K. |
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About LO power required |
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