| Author |
Title |
Year |
Publication |
Volume  |
Pages |
| Bryerton, E.; Percy, R.; Bass, R.; Schultz, J.; Oluleye, O.; Lichtenberger, A.; Ediss, G. A.; Pan, S. K.; Goltsman, G. N. |
Receiver measurements of pHEB beam lead mixers on 3-μm silicon |
2005 |
Proc. 30th IRMMW / 13th THz |
|
271-272 |
| Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range |
1997 |
Proc. 4-th Int. Semicond. Device Research Symp. |
|
55-58 |
| Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
Investigation of population and ionization of donor excited states in Ge |
1976 |
Physics of Semiconductors |
|
631-634 |
| Averkin, A. S.; Shishkin, A. G.; Chichkov, V. I.; Voronov, B. M.; Goltsman, G. N.; Karpov, A.; Ustinov, A. V. |
Tunable frequency-selective surface based on superconducting split-ring resonators |
2014 |
8th Metamaterials |
|
|
| Semenov, A. V.; Devyatov, I. A.; Korneev, A. A.; Smirnov, K. V.; Goltsman, G. N.; Melnikov, A. P. |
Derivation of expression for thermodynamic potential of “dirty” superconductor |
2012 |
Rus. J. Radio Electron. |
|
|
