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Bryerton, E.; Percy, R.; Bass, R.; Schultz, J.; Oluleye, O.; Lichtenberger, A.; Ediss, G. A.; Pan, S. K.; Goltsman, G. N. Receiver measurements of pHEB beam lead mixers on 3-μm silicon 2005 Proc. 30th IRMMW / 13th THz 271-272 details   doi
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range 1997 Proc. 4-th Int. Semicond. Device Research Symp. 55-58 details   url
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. Investigation of population and ionization of donor excited states in Ge 1976 Physics of Semiconductors 631-634 details   url
Averkin, A. S.; Shishkin, A. G.; Chichkov, V. I.; Voronov, B. M.; Goltsman, G. N.; Karpov, A.; Ustinov, A. V. Tunable frequency-selective surface based on superconducting split-ring resonators 2014 8th Metamaterials details   openurl
Semenov, A. V.; Devyatov, I. A.; Korneev, A. A.; Smirnov, K. V.; Goltsman, G. N.; Melnikov, A. P. Derivation of expression for thermodynamic potential of “dirty” superconductor 2012 Rus. J. Radio Electron. details   url
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