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Gol’tsman, G. N.; Smirnov, K. V. |
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Title |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
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Journal Article |
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2001 |
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Jetp Lett. |
Abbreviated Journal |
Jetp Lett. |
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74 |
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9 |
Pages |
474-479 |
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Keywords |
2DEG, AlGaAs/GaAs heterostructures |
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Abstract |
Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered. |
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0021-3640 |
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По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах |
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1541 |
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Гольцман, Г. Н.; Смирнов, К. В. |
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По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах |
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Journal Article |
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2001 |
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Письма в ЖЭТФ |
Abbreviated Journal |
Письма в ЖЭТФ |
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74 |
Issue |
9 |
Pages |
532-538 |
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Keywords |
2DEG, AlGaAs/GaAs heterostructures |
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Рассмотрены теоретические и экспериментальные работы, посвященные изучению электрон-фононного взаимодействия в двумерном электронном газе полупроводниковых гетероструктур при низких температурах в случае сильного разогрева в электрическом поле, в квазиравновесных условиях и в квантующем магнитном поле, перпендикулярном 2D слою. |
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Duplicated as 1541: “Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures” |
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1832 |
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Il’in, K. S.; Milostnaya, I. I.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Sobolewski, R. |
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Title |
Ultimate quantum efficiency of a superconducting hot-electron photodetector |
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Journal Article |
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1998 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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73 |
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26 |
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3938-3940 |
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NbN SSPD, SNSPD |
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The quantum efficiency and current and voltage responsivities of fast hot-electron photodetectors, fabricated from superconducting NbN thin films and biased in the resistive state, have been shown to reach values of 340, 220 A/W, and 4×104 V/W,
respectively, for infrared radiation with a wavelength of 0.79 μm. The characteristics of the photodetectors are presented within the general model, based on relaxation processes in the nonequilibrium electron heating of a superconducting thin film. The observed, very high efficiency and sensitivity of the superconductor absorbing the photon are explained by the high multiplication rate of quasiparticles during the avalanche breaking of Cooper pairs. |
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0003-6951 |
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1579 |
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Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. |
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Title |
Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon |
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Journal Article |
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Year |
2001 |
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Jetp Lett. |
Abbreviated Journal |
Jetp Lett. |
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Volume |
73 |
Issue |
1 |
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44-47 |
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Keywords |
uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field |
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The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap. |
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0021-3640 |
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1752 |
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Nebosis, R. S.; Steinke, R.; Lang, P. T.; Schatz, W.; Heusinger, M. A.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. |
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Title |
Picosecond YBa2Cu3O7−δdetector for far‐infrared radiation |
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Journal Article |
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Year |
1992 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
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Volume |
72 |
Issue |
11 |
Pages |
5496-5499 |
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Keywords |
YBCO HTS detectors |
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We report on a picosecond YBa2Cu3O7−δ detector for far‐infrared radiation. The detector, consisting of a current carrying structure cooled to liquid‐nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far‐infrared laser in the frequency range from 25 to 215 cm−1. We found that the sensitivity (1 mV/W) was almost constant in this frequency range. We estimated a noise equivalent power of less than 5×10−7 W Hz−1/2. Taking into account the results of a mixing experiment (in the frequency range from 4 to 30 cm−1) we suggest that the response time of the detector was few picoseconds. |
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0021-8979 |
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1668 |
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