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Author Kitaygorsky, J.; Zhang, J.; Verevkin, A.; Sergeev, A.; Korneev, A.; Matvienko, V.; Kouminov, P.; Smirnov, K.; Voronov, B.; Gol'tsman, G.; Sobolewski, R. doi  openurl
  Title Origin of dark counts in nanostructured NbN single-photon detectors Type Journal Article
  Year 2005 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume (down) 15 Issue 2 Pages 545-548  
  Keywords SSPD dark counts, SNSPD, dark counts rate  
  Abstract We present our study of dark counts in ultrathin (3.5 to 10 nm thick), narrow (120 to 170 nm wide) NbN superconducting stripes of different lengths. In experiments, where the stripe was completely isolated from the outside world and kept at temperature below the critical temperature Tc, we detected subnanosecond electrical pulses associated with the spontaneous appearance of the temporal resistive state. The resistive state manifested itself as generation of phase-slip centers (PSCs) in our two-dimensional superconducting stripes. Our analysis shows that not far from Tc, PSCs have a thermally activated nature. At lowest temperatures, far below Tc, they are created by quantum fluctuations.  
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  Call Number Serial 1057  
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Author Lipatov, A.; Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Kouminov, P.; Gol'tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. url  doi
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  Title An ultrafast NbN hot-electron single-photon detector for electronic applications Type Journal Article
  Year 2002 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.  
  Volume (down) 15 Issue 12 Pages 1689-1692  
  Keywords NbN SSPD, SNSPD, QE, jitter, dark counts  
  Abstract We present the latest generation of our superconducting single-photon detector (SPD), which can work from ultraviolet to mid-infrared optical radiation wavelengths. The detector combines a high speed of operation and low jitter with high quantum efficiency (QE) and very low dark count level. The technology enhancement allows us to produce ultrathin (3.5 nm thick) structures that demonstrate QE hundreds of times better, at 1.55 μm, than previous 10 nm thick SPDs. The best, 10 × 10 μm2, SPDs demonstrate QE up to 5% at 1.55 μm and up to 11% at 0.86 μm. The intrinsic detector QE, normalized to the film absorption coefficient, reaches 100% at bias currents above 0.9 Ic for photons with wavelengths shorter than 1.3 μm.  
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  ISSN 0953-2048 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1533  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Elantiev, A. I.; Karasik, B. S.; Potoskuev, S. E. url  openurl
  Title Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state Type Journal Article
  Year 1988 Publication Sov. J. Low Temp. Phys. Abbreviated Journal Sov. J. Low Temp. Phys.  
  Volume (down) 14 Issue 7 Pages 414-420  
  Keywords HEB  
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  Notes Duplicated as 1697 Approved no  
  Call Number Serial 236  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Karasik, B. S.; Potoskuev, S. E. url  openurl
  Title Intense electromagnetic radiation heating of superconductor electrons in resistive state Type Journal Article
  Year 1988 Publication Fizika Nizkikh Temperatur Abbreviated Journal Fizika Nizkikh Temperatur  
  Volume (down) 14 Issue 7 Pages 753-763  
  Keywords Nb HEB  
  Abstract An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model.  
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  Notes Approved no  
  Call Number Serial 1697  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. url  openurl
  Title Binding energy of a carrier with a neutral impurity atom in germanium and in silicon Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume (down) 14 Issue 5 Pages 185-186  
  Keywords Ge, Si, neutral impurity atom, binding energy  
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  Notes Approved no  
  Call Number Serial 1739  
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Author Gershenzon, E. M.; Gol'tsman, G. N. url  openurl
  Title Transitions of electrons between excited states of donors in germanium Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume (down) 14 Issue 2 Pages 63-65  
  Keywords Ge, donors, excited states  
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  Notes Approved no  
  Call Number Serial 1740  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. url  openurl
  Title Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume (down) 14 Issue 6 Pages 241  
  Keywords Ge, gamma irradiation, defects, impurities  
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  Notes Approved no  
  Call Number Serial 1742  
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Author Sobolewski, R.; Verevkin, A.; Gol'tsman, G.N.; Lipatov, A.; Wilsher, K. url  doi
openurl 
  Title Ultrafast superconducting single-photon optical detectors and their applications Type Journal Article
  Year 2003 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal  
  Volume (down) 13 Issue 2 Pages 1151-1157  
  Keywords NbN SSPD, SNSPD  
  Abstract We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications.  
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  ISSN 1051-8223 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 509  
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Author Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G. doi  openurl
  Title Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer Type Journal Article
  Year 2003 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume (down) 13 Issue 2 Pages 164-167  
  Keywords NbN HEB mixer  
  Abstract In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions.  
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  Notes Approved no  
  Call Number Serial 341  
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Author Semenov, A. D.; Hübers, Heinz-Wilhelm; Richter, H.; Birk, M.; Krocka, M.; Mair, U.; Vachtomin, Yu. B.; Finkel, M. I.; Antipov, S. V.; Voronov, B. M.; Smirnov, K. V.; Kaurova, N. S.; Drakinski, V. N.; Gol'tsman, G. N. doi  openurl
  Title Superconducting hot-electron bolometer mixer for terahertz heterodyne receivers Type Journal Article
  Year 2003 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal  
  Volume (down) 13 Issue 2 Pages 168-171  
  Keywords NbN HEB mixers  
  Abstract We present recent results showing the development of superconducting NbN hot-electron bolometer mixer for German receiver for astronomy at terahertz frequencies and terahertz limb sounder. The mixer is incorporated into a planar feed antenna, which has either logarithmic spiral or double-slot configuration, and backed on a silicon lens. The hybrid antenna had almost frequency independent and symmetric radiation pattern slightly broader than expected for a diffraction limited antenna. At 2.5 THz the best 2200 K double side-band receiver noise temperature was achieved across a 1 GHz intermediate frequency bandwidth centred at 1.5 GHz. For this operation regime, a receiver conversion efficiency of -17 dB was directly measured and the loss budget was evaluated. The mixer response was linear at load temperatures smaller than 400 K. Implementation of the MgO buffer layer on Si resulted in an increased 5.2 GHz gain bandwidth. The receiver was tested in the laboratory environment by measuring a methanol emission line at 2.5 THz.  
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  Notes Approved no  
  Call Number Serial 343  
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