| Records |
| Author |
Zhang, W.; Miao, W.; Yao, Q. J.; Lin, Z. H.; Shi, S. C.; Gao, J. R.; Goltsman, G. N. |
| Title |
Spectral response and noise temperature of a 2.5 THz spiral antenna coupled NbN HEB mixer |
Type |
Journal Article |
| Year |
2012 |
Publication |
Phys. Procedia |
Abbreviated Journal |
Phys. Procedia |
Volume  |
36 |
Issue |
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Pages |
334-337 |
| Keywords |
NbN HEB mixer |
| Abstract |
We report on a 2.5 THz spiral antenna coupled NbN hot electron bolometer (HEB) mixers, fabricated with in-situ process. The receiver noise temperature with lowest value of 1180 K is in good agreement with calculated quantum efficiency factor as a function of bias voltage. In addition, the measured spectral response of the spiral antenna coupled NbN HEB mixer shows broad frequency coverage of 0.8-3 THz, and corrected response for optical losses, FTS, and coupling efficiency between antenna and bolometer falls with frequency due to diffraction-limited beam of lens/antenna combination. |
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1875-3892 |
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1381 |
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| Author |
Ozhegov, R. V.; Gorshkov, K. N.; Okunev, O. V.; Gol’tsman, G. N. |
| Title |
Superconducting hot-electron bolometer mixer as element of thermal imager matrix |
Type |
Journal Article |
| Year |
2010 |
Publication |
Tech. Phys. Lett. |
Abbreviated Journal |
Tech. Phys. Lett. |
| Volume |
36 |
Issue |
11 |
Pages |
1006-1008 |
| Keywords |
HEB mixers |
| Abstract |
The possibility of using a matrix of sensitive elements on a 12-mm-diameter hyperhemispherical lens in a thermal imager operating in the terahertz range has been studied. Dimensions of a lens region acceptable for arrangement of the matrix, in which the receiver noise temperature varies within 16% of the mean value, are determined to be 3.3% of the lens diameter. Deviations of the main lobe of the directivity pattern are evaluated, which amount to ±1.25° relative to the direction toward the optimum position of a mixer. The fluctuation sensitivity of the receiver measured in experiment is 0.5 K at a frequency of 300 GHz. |
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1063-7850 |
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no |
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1390 |
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| Author |
Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
| Title |
Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state |
Type |
Journal Article |
| Year |
1982 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
36 |
Issue |
7 |
Pages |
296-299 |
| Keywords |
HEB |
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Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии |
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no |
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Serial |
1717 |
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| Author |
Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
| Title |
Limiting characteristic of fast superconducting bolometers |
Type |
Journal Article |
| Year |
1989 |
Publication |
Sov. Phys.-Tech. Phys. |
Abbreviated Journal |
Sov. Phys.-Tech. Phys. |
| Volume |
34 |
Issue |
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Pages |
195-199 |
| Keywords |
HEB |
| Abstract |
Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. |
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О предельных характеристиках быстродействующих серхпроводниковых болометров |
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no |
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Serial |
237 |
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| Author |
Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. |
| Title |
Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer |
Type |
Journal Article |
| Year |
2019 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
| Volume |
32 |
Issue |
7 |
Pages |
075003 |
| Keywords |
NbN HEB mixer, GaN buffer layer, sapphire substrate |
| Abstract |
We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer. |
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IOP Publishing |
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Antipov_2019 |
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1277 |
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