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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K 1996 JETP Lett. 64 404-409 details   doi
Lindgren, M.; Trifonov, V.; Zorin, M.; Danerud, M.; Winkler, D.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E.M. Transient resistive photoresponse of YBa2Cu3O7−δ films using low power 0.8 and 10.6 μm laser radiation 1994 Appl. Phys. Lett. 64 3036-3038 details   doi
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium 1986 Sov. Phys. JETP 64 889-897 details   url
Semenov, A. D.; Goghidze, I. G.; Gol’tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M. Evidence for the spectral dependence of nonequilibrium picosecond photoresponse of YBaCuO thin films 1993 Appl. Phys. Lett. 63 681-683 details   doi
Eletskii, A. V.; Sarychev, A. K.; Boginskaya, I. A.; Bocharov, G. S.; Gaiduchenko, I. A.; Egin, M. S.; Ivanov, A. V.; Kurochkin, I. N.; Ryzhikov, I. A.; Fedorov, G. E. Amplification of a Raman scattering signal by carbon nanotubes 2018 Dokl. Phys. 63 496-498 details   doi
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