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Iomdina, E. N., Goltsman, G. N., Seliverstov, S. V., Sianosyan, A. A., Teplyakova, K. O., & Rusova, A. A. (2016). Study of transmittance and reflectance spectra of the cornea and the sclera in the THz frequency range. J. Biomed. Opt., 21(9), 97002 (1 to 5).
Abstract: An adequate water balance (hydration extent) is one of the basic factors of normal eye function, including its external shells: the cornea and the sclera. Adequate control of corneal and scleral hydration is very important for early diagnosis of a variety of eye diseases, stating indications for and contraindications against keratorefractive surgeries and the choice of contact lens correction solutions. THz systems of creating images in reflected beams are likely to become ideal instruments of noninvasive control of corneal and scleral hydration degrees. This paper reports on the results of a study involving transmittance and reflectance spectra for the cornea and the sclera of rabbit and human eyes, as well as those of the rabbit eye, in the frequency range of 0.13 to 0.32 THz. The dependence of the reflectance coefficient of these tissues on water mass percentage content was determined. The experiments were performed on three corneas, three rabbit scleras, two rabbit eyes, and three human scleras. The preliminary results demonstrate that the proposed technique, based on the use of a continuous THz radiation, may be utilized to create a device for noninvasive control of corneal and scleral hydration, which has clear potential of broad practical application.
Keywords: BWO, IMPATT diode, Schottky diode, medicine, animals, cornea, physiology, humans, rabbits, sclera diagnostic imaging, physiology
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Vetter, A., Ferrari, S., Rath, P., Alaee, R., Kahl, O., Kovalyuk, V., et al. (2016). Cavity-enhanced and ultrafast superconducting single-photon detectors. Nano Lett., 16(11), 7085–7092.
Abstract: Ultrafast single-photon detectors with high efficiency are of utmost importance for many applications in the context of integrated quantum photonic circuits. Detectors based on superconductor nanowires attached to optical waveguides are particularly appealing for this purpose. However, their speed is limited because the required high absorption efficiency necessitates long nanowires deposited on top of the waveguide. This enhances the kinetic inductance and makes the detectors slow. Here, we solve this problem by aligning the nanowire, contrary to usual choice, perpendicular to the waveguide to realize devices with a length below 1 mum. By integrating the nanowire into a photonic crystal cavity, we recover high absorption efficiency, thus enhancing the detection efficiency by more than an order of magnitude. Our cavity enhanced superconducting nanowire detectors are fully embedded in silicon nanophotonic circuits and efficiently detect single photons at telecom wavelengths. The detectors possess subnanosecond decay ( approximately 120 ps) and recovery times ( approximately 510 ps) and thus show potential for GHz count rates at low timing jitter ( approximately 32 ps). The small absorption volume allows efficient threshold multiphoton detection.
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Khasminskaya, S., Pyatkov, F., Słowik, K., Ferrari, S., Kahl, O., Kovalyuk, V., et al. (2016). Fully integrated quantum photonic circuit with an electrically driven light source. Nat. Photon., 10(11), 727–732.
Abstract: Photonic quantum technologies allow quantum phenomena to be exploited in applications such as quantum cryptography, quantum simulation and quantum computation. A key requirement for practical devices is the scalable integration of single-photon sources, detectors and linear optical elements on a common platform. Nanophotonic circuits enable the realization of complex linear optical systems, while non-classical light can be measured with waveguide-integrated detectors. However, reproducible single-photon sources with high brightness and compatibility with photonic devices remain elusive for fully integrated systems. Here, we report the observation of antibunching in the light emitted from an electrically driven carbon nanotube embedded within a photonic quantum circuit. Non-classical light generated on chip is recorded under cryogenic conditions with waveguide-integrated superconducting single-photon detectors, without requiring optical filtering. Because exclusively scalable fabrication and deposition methods are used, our results establish carbon nanotubes as promising nanoscale single-photon emitters for hybrid quantum photonic devices.
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Тархов, М. А. (2016). Разработка сверхпроводниковых однофотонных детекторов с повышенной спектральной чувствительностью и быстродействием. Ph.D. thesis, НИЦ "Курчатовский институт", .
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Тархов, М. А. (2016). Разработка сверхпроводниковых однофотонных детекторов с повышенной спектральной чувствительностью и быстродействием. Автореферат.
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Столяров, А. В. (2016). Программирование. Введение в профессию. Том 1. Азы программирования. Москва.
Abstract: Первый том серии «Программирование: введение в профессию» включает две основные части. В первую часть книги вошли избранные сведения из истории вычислительной техники, обсуждение некоторых областей математики, непосредственно используемых программистами (таких как алгебра логики, комбинаторика, позиционные системы счисления), математических основ программирования (теория вычислимости и теория алгоритмов), принципы построения и функционирования вычислительных систем, начальные сведения о работе с командной строкой ОС Unix. Вторая часть посвящена начальным навыкам составления компьютерных программ на примере Free Pascal под ОС Unix. Материал ориентирован на изучение в будущем языка Си, так что, в частности, много внимания уделено работе с адресами и указателями, построению списков и других динамических структур данных; в то же время многие возможности Паскаля из рассмотрения исключены. Даются сведения о правилах оформления текстов программ, о тестировании и отладке.
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Столяров, А. В. (2016). Программирование. Введение в профессию. Том 2. Низкоуровневое программирование. Москва.
Abstract: Во второй том книги «Программирование: введение в профессию» вошли её третья и четвёртая части. Третья часть книги посвящена программированию на уровне машинных команд на примере ассемблера NASM. Рассматривается «юзерспейсовская» часть системы команд i386, конвенции системных вызовов Linux/i386 и FreeBSD/i386, изучается макропроцессор, раздельная трансляция и работа компоновщика, приведены сведения об арифметике с плавающей точкой. Четвёртая часть, посвящённая языку Си, включает, кроме собственно описания этого языка, также краткие сведения о библиотеке ncurses; рассказ о том, как использовать компилятор Си без его стандартной библиотеки; дополнительные сведения об инструментах сборки и отладки программ; наконец, в книге приводится краткое описание систем контроля версий CVS и git.
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Krause, S., Mityashkin, V., Antipov, S., Gol'tsman, G., Meledin, D., Desmaris, V., et al. (2016). Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method. In Proc. 27th Int. Symp. Space Terahertz Technol. (pp. 30–32).
Abstract: In this paper, we present a reliable measurement method to study the influence of the GaN buffer layer on phonon-escape time in comparison with commonly used Si substrates and, in consequence, on the IF bandwidth of HEBs. One of the key aspects is to operate the HEB mixer at elevated bath temperatures close to the critical temperature of the NbN ultra-thin film, where contributions from electron-phonon processes and self-heating effects are relatively small, therefore IF roll-off will be governed by the phonon-escape.Two independent experiments were performed at GARD and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. The entire IF chain was characterized by S-parameter measurements. We compared the measurement results of epitaxial NbN grown onto GaN buffer-layer with Tc of 12.5 K (4.5nm) with high quality polycrystalline NbN films on Si substrate with Tc of 10.5K (5nm) and observed a strong indication of an enhancement of phonon escape to the substrate by a factor of two for the NbN/GaN material combination.
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Shcherbatenko, M., Lobanov, Y., Kovalyuk, V., Korneev, A., & Gol'tsman, G. N. (2016). Photon counting detector as a mixer with picowatt local oscillator power requirement. In Proc. 27th Int. Symp. Space Terahertz Technol. (110).
Abstract: At the current stage of the heterodyne receiver technology, great attention is paid to the development of detector arrays and matrices comprising many detectors on a single wafer. However, any traditional THz detector (such as SIS, HEB, or Schottky diode) requires quite a noticeable amount of Local Oscillator (LO) power which scales with the matrix size, and the total amount of the LO power needed is much greater than that available from compact and handy solid state sources. Substantial reduction of the LO power requirement may be obtained with a photon-counting detector used as a mixer. This approach, mentioned earlier in [1,2] provides a number of advantages. Thus, sensitivity of such a detector would be at the quantum limit (because of the photon-counting nature of the detector) and just a few LO photons for the mixing would be required leading to a possible breakthrough in the matrix receiver development. In addition, the receiver could be easily tuned from the heterodyne to the direct detection mode without any loss in its sensitivity with the latter limited only by the quantum efficiency of the detector used. We demonstrate such a technique with the use of the Superconducting Nanowire Single Photon Detector(SNSPD)[3] irradiated by both 1.5 μm LO with a tiny amount of power (from a few picowatts down to femtowatts) facing the detector, and the test signal with a power significantly less than that of the LO. The SNSPD was operated in the current mode and the bias current was slightly below its critical value. Irradiating the detector with either the LO or the signal source produced voltage pulses which are statistically evenly distributed and could be easily counted by a lab counter or oscilloscope. Irradiating the detector by the both lasers simultaneously produced pulses at the frequency f m which is the exact difference between the frequencies at which the two lasers operate. f m could be deduced form either counts statistics integrated over a sufficient time interval or with the help of an RF spectrum analyzer. In addition to the chip SNSPD with normal incidence coupling, we use the detectors with a travelling wave geometry design [4]. In this case a niobium nitride nanowire is placed on the top of a nanophotonic waveguide, thus increasing the efficient interaction length. Integrated device scheme allows us to measure the optical losses with high accuracy. Our approach is fully scalable and, along with a large number of devices integrated on a single chip can be adapted to the mid and far IR ranges. This work was supported in part by the Ministry of Education and Science of the Russian Federation, contract no. 14.B25.31.0007 and by RFBR grant # 16-32-00465. 1. Leaf A. Jiang and Jane X. Luu, ―Heterodyne detection with a weak local oscillator, Applied Optics Vol. 47, Issue 10, pp. 1486-1503 (2008) 2. Matsuo H. ―Requirements on Photon Counting Detectors for Terahertz Interferometry J Low Temp Phys (2012) 167:840–845 3. A. Semenov, G. Gol'tsman, A. Korneev, “Quantum detection by current carrying superconducting film”, Physica C, 352, pp. 349-356 (2001) 4. O. Kahl, S. Ferrari, V. Kovalyuk, G. N. Goltsman, A. Korneev, and W. H. P. Pernice, ―Waveguide integrated superconducting single-photon detectors with high internal quantum efficiency at telecom wavelengths., Sci. Rep., vol. 5, p. 10941, (2015).
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Trifonov, A., Tong, C. - Y. E., Lobanov, Y., Kaurova, N., Blundell, R., & Goltsman, G. (2016). Gap frequency and photon absorption in a hot electron bolometer. In Proc. 27th Int. Symp. Space Terahertz Technol. (121).
Abstract: The superconducting energy gap is a crucial parameter of a superconductor when used in mixing applications. In the case of the SIS mixer, the mixing process is efficient for frequencies below the energy gap, whereas, in the case of the HEB mixer, the mixing process is most efficient at frequencies above the gap, where photon absorption takes place more readily. We have investigated the photon absorption phenomenon around the gap frequency of HEB mixers based on NbN films deposited on silicon membranes. Apart from studying the pumped I-V curves of HEB devices, we have also probed them with microwave radiation, as previously described [1]. At frequencies far below the gap frequency, the pumped I-V curves show abrupt switching between the superconducting and resistive states. For the NbN HEB mixers we tested, which have critical temperatures of ~9 K, this is true for frequencies below about 400 GHz. As the pump frequency is increased beyond 400 GHz, the resistive state extends towards zero bias and at some point a small region of negative differential resistance appears close to zero bias. In this region, the microwave probe reveals that the device impedance is changing randomly with time. As the pump frequency is further increased, this random impedance change develops into relaxation oscillations, which can be observed by the demodulation of the reflected microwave probe. Initially, these oscillations take the form of several frequencies grouped together under an envelope. As we approach the gap frequency, the multiple frequency relaxation oscillations coalesce into a single frequency of a few MHz. The resultant square-wave nature of the oscillation is a clear indication that the device is in a bi-stable state, switching between the superconducting and normal state. Above the gap frequency, it is possible to obtain a pumped I-V curve with no negative differential resistance above a threshold pumping level. Below this pumping level, the device demonstrates bi-stability, and regular relaxation oscillation at a few MHz is observed as a function of pump power. The threshold pumping level is clearly related to the amount of power absorbed by the device and its phonon cooling. From the above experiment, we can derive the gap frequency of the NbN film, which is 585 GHz for our 6 μm thin silicon membrane-based device. We also confirm that the HEB mixer is not an efficient photon absorber for radiation below the gap frequency. 1. A. Trifonov et al., “Probing the stability of HEB mixers with microwave injection”, IEEE Trans. Appl. Supercond., vol. 25, no. 3, June 2015.
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