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Author Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Gol'tsman, G.; Svechnikov, S.; Gershenzon, E. url  doi
openurl 
  Title Noise temperature and local oscillator power requirement of NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies Type Journal Article
  Year 1998 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume (up) 73 Issue 19 Pages 2814-2816  
  Keywords NbN HEB mixers, noise temperature, local oscillator power  
  Abstract In this letter, the noise performance of NbN-based phonon-cooled hot electron bolometric quasioptical mixers is investigated in the 0.55–1.1 THz frequency range. The best results of the double-sideband <cd><2018>DSB<cd><2019> noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz, and 1250 K at 1.1 THz. The water vapor in the signal path causes significant contribution to the measured receiver noise temperature around 1.1 THz. The devices are made from 3-nm-thick NbN film on high-resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are typically 0.2Ï«2 um. The amount of local oscillator power absorbed in the bolometer is less than 100 nW.  
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  Notes Approved no  
  Call Number Serial 911  
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Author Cherednichenko, Sergey; Drakinskiy, Vladimir; Berg, Therese; Khosropanah, Pourya; Kollberg, Erik openurl 
  Title Hot-electron bolometer terahertz mixers for the Herschel Space Observatory Type Journal Article
  Year 2008 Publication Review of Scientific Instruments Abbreviated Journal Rev. Sci. Instrum.  
  Volume (up) 79 Issue Pages 034501  
  Keywords HEB mixer, HEB detector, HEB direct detector, applications  
  Abstract We report on low noise terahertz mixers(1.4–1.9THz) developed for the heterodyne spectrometer onboard the Herschel Space Observatory. The mixers employ double slot antenna integrated superconducting hot-electron bolometers (HEBs) made of thin NbN films. The mixer performance was characterized in terms of detection sensitivity across the entire rf band by using a Fourier transform spectrometer (from 0.5to2.5THz, with 30GHz resolution) and also by measuring the mixernoise temperature at a limited number of discrete frequencies. The lowest mixernoise temperature recorded was 750K [double sideband (DSB)] at 1.6THz and 950KDSB at 1.9THz local oscillator (LO) frequencies. Averaged across the intermediate frequency band of 2.4–4.8GHz, the mixernoise temperature was 1100KDSB at 1.6THz and 1450KDSB at 1.9THz LO frequencies. The HEB heterodyne receiver stability has been analyzed and compared to the HEB stability in the direct detection mode. The optimal local oscillator power was determined and found to be in a 200–500nW range.  
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  Notes Approved no  
  Call Number Serial 908  
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Author Kawamura, J.; Blundell, R.; Tong, C.‐yu E.; Gol’tsman, G.; Gershenzon, E.; Voronov, B. url  doi
openurl 
  Title Performance of NbN lattice‐cooled hot‐electron bolometric mixers Type Journal Article
  Year 1996 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.  
  Volume (up) 80 Issue 7 Pages 4232-4234  
  Keywords NbN HEB mixers  
  Abstract The heterodyne performance of lattice‐cooled hot‐electron bolometric mixers is measured at 200 GHz. Superconducting thin‐film niobium nitride strips with ∼5 nm thickness are used as waveguide mixer elements. A double‐sideband receiver noise temperature of 750 K at 244 GHz is measured at an intermediate frequency centered at 1.5 GHz with 500 MHz bandwidth and with 4.2 K device temperature. The instantaneous bandwidth for this mixer is 1.6 GHz. The local oscillator power required by the mixer is about 0.5 μW. The mixer is linear to within 1 dB up to an input power level 6 dB below the local oscillator power. A receiver incorporating a hot‐electron bolometric mixer was used to detect molecular line emission in a laboratory gascell. This experiment unambiguously confirms that the receiver noise temperature determined from Y‐factor measurements reflects the true heterodyne sensitivity.  
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  ISSN 0021-8979 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1607  
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Author Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. doi  openurl
  Title Doubling of sensitivity and bandwidth in phonon cooled hot electron bolometer mixers Type Journal Article
  Year 2004 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume (up) 84 Issue 11 Pages 1958-1960  
  Keywords NbN HEB mixers  
  Abstract We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. We show experimentally that both the receiver noise temperature and the gain bandwidth can be improved by more than a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature TN,DSB=950 K

at 2.5 THz and 4.3 K, uncorrected for losses in the optics. At the same bias point, we obtain an IF gain bandwidth of 6 GHz.
 
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  Call Number Serial 352  
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Author Barends, R.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M. openurl 
  Title Current-induced vortex unbinding in bolometer mixers Type Journal Article
  Year 2005 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume (up) 87 Issue Pages 263506 (1 to 3)  
  Keywords HEB mixer numerical model, HEB model, IV-curves, vortex-antivortex, Berezinskii–Kosterlitz–Thouless theory, diffusion cooling channel, diffusion channel, distributed HEB model, distributed model, self-heating effect, temperature profile  
  Abstract We present a description of the current-voltage characteristics of hot electron bolometers in terms of the current-dependent intrinsic resistive transition of NbN films. We find that, by including this current dependence, we can correctly predict the complete current-voltage characteristics, showing excellent agreement with measurements for both low and high bias and for small as well as large devices. It is assumed that the current dependence is due to vortex-antivortex unbinding as described in the Berezinskii–Kosterlitz–Thouless theory. The presented approach will be useful in guiding device optimization for noise and bandwidth.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 604  
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