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Zorin, M.; Lindgren, M.; Danerud, M.; Karasik, B.; Winkler, D.; Gol'tsman, G.; Gershenzon, E. |
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Title |
Nonequilibrium and bolometric responses of YBaCuO thin films to high-frequency modulated laser radiation |
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Journal Article |
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1995 |
Publication |
J. Supercond. |
Abbreviated Journal |
J. Supercond. |
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8 |
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1 |
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11-15 |
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Keywords |
YBCO HTS HEB |
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Abstract |
Picosecond nonequilibrium and slow bolometric responses to infrared radiation from a patterned high-T c superconducting (HTS) film in resistive and normal states deposited onto LaAlO3, NdGaO3, and MgO substrates were investigated using both pulse and modulation techniques. The response time of 35 ps to a laser pulse of 17 ps FWHM has been observed. The intrinsic response time of the fast process is expected to be about a few picoseconds. The modulation technique, being free from the disadvantages of pulse methods (poor sensitivity, limited dynamic range), makes the detailed study of a number of relaxation processes possible. Besides the nonequilibrium response, two kinds of bolometric processes, namely phonon transport through the film-substrate interface and phonon thermal diffusion in a substrate, manifest themselves in certain frequency dependences. |
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0896-1107 |
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1630 |
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Klapwijk, T. M.; Semenov, A. V. |
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Title |
Engineering physics of superconducting hot-electron bolometer mixers |
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Journal Article |
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Year |
2017 |
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IEEE Trans. THz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. THz Sci. Technol. |
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Volume |
7 |
Issue |
6 |
Pages |
627-648 |
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Keywords |
HEB mixers |
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Superconducting hot-electron bolometers are presently the best performing mixing devices for the frequency range beyond 1.2 THz, where good-quality superconductor-insulator-superconductor devices do not exist. Their physical appearance is very simple: an antenna consisting of a normal metal, sometimes a normal-metal-superconductor bilayer, connected to a thin film of a narrow short superconductor with a high resistivity in the normal state. The device is brought into an optimal operating regime by applying a dc current and a certain amount of local-oscillator power. Despite this technological simplicity, its operation has found to be controlled by many different aspects of superconductivity, all occurring simultaneously. A core ingredient is the understanding that there are two sources of resistance in a superconductor: a charge-conversion resistance occurring at a normal-metal-superconductor interface and a resistance due to time-dependent changes of the superconducting phase. The latter is responsible for the actual mixing process in a nonuniform superconducting environment set up by the bias conditions and the geometry. The present understanding indicates that further improvement needs to be found in the use of other materials with a faster energy relaxation rate. Meanwhile, several empirical parameters have become physically meaningful indicators of the devices, which will facilitate the technological developments. |
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2156-342X |
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1292 |
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Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M. |
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Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers |
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Journal Article |
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2017 |
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IEEE Trans. Terahertz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. Terahertz Sci. Technol. |
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7 |
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1 |
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53-59 |
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NbN HEB mixer |
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In this paper, we investigated the influence of the GaN buffer layer on the phonon escape time of phonon-cooled hot electron bolometers (HEBs) based on NbN material and compared our findings to conventionally employed Si substrate. The presented experimental setup and operation of the HEB close to the critical temperature of the NbN film allowed for the extraction of phonon escape time in a simplified manner. Two independent experiments were performed at GARD/Chalmers and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. By fitting the normalized IF measurement data to the heat balance equations, the escape time as a fitting parameter has been deduced and amounts to 45 ps for the HEB based on Si substrate as in contrast to a significantly reduced escape time of 18 ps for the HEB utilizing the GaN buffer layer under the assumption that no additional electron diffusion has taken place. This study indicates a high phonon transmissivity of the NbN-to-GaN interface and a prospective increase of IF bandwidth for HEB made of NbN on GaN buffer layers, which is desirable for future THz HEB heterodyne receivers. |
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2156-3446 |
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1330 |
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Gousev, Y. P.; Semenov, A. D.; Goghidze, I. G.; Pechen, E. V.; Varlashkin, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Renk, K. F. |
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Title |
Current dependent noise in a YBa2Cu3O7-δ hot-electron bolometer |
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Journal Article |
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Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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7 |
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2 |
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3556-3559 |
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YBCO HTS HEB mixers |
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We investigated the output noise of a YBa2Cu3O7-δ (YBCO) superconducting hot-electron bolometer (HEB) in a large frequency range (10 kHz to 8 GHz); the bolometer either consisted of a structured 50 nm thick YBCO film on LaAlO/sub 3/ or a 30 nm thick film on a MgO substrate. We found that flicker noise dominated at low frequencies (below 1 MHz), while at higher frequencies Johnson noise and a current dependent noise were the main noise sources. |
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1051-8223 |
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1592 |
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Semenov, A. D.; Gousev, Y. P.; Renk, K. F.; Voronov, B. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Schwaab, G.W.; Feinaugle, R. |
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Title |
Noise characteristics of a NbN hot-electron mixer at 2.5 THz |
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Journal Article |
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Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
7 |
Issue |
2 |
Pages |
3572-3575 |
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Keywords |
NbN HEB mixers |
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The noise temperature of a NbN phonon cooled hot-electron mixer has been measured at a frequency of 2.5 THz for various operating conditions. We obtained for optimal operation a double sideband mixer noise temperature of /spl ap/14000 K and a system conversion loss of /spl ap/23 dB at intermediate frequencies up to 1 GHz. The dependences of the mixer noise temperature on the bias voltage, local oscillator power, and intermediate frequency were consistent with the phenomenological description based on the effective temperature approximation. |
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1051-8223 |
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1594 |
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