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Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Lyulkin, A. M.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Limiting characteristics of fast-response superconducting bolometers |
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1989 |
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Zhurnal Tekhnicheskoi Fiziki |
Abbreviated Journal |
Zhurnal Tekhnicheskoi Fiziki |
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59 |
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2 |
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11-120 |
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HEB |
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Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон-ного взаимодействия. Сформулированы требования к конструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. |
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1696 |
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Meledin, Denis; Pavolotsky, Alexey; Desmaris, Vincent.; Lapkin, Igor; Risacher, Christophe; Perez, Victor; Henke, Douglas; Nystrom, Olle; Sundin, Erik; Dochev, Dimitar; Pantaleev, Miroslav; Fredrixon, Mathias; Strandberg, Magnus; Voronov, Boris; Goltsman, Gregory; Belitsky, Victor |
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Title |
A 1.3-THz balanced waveguide HEB mixer for the APEX telescope |
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2009 |
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IEEE Trans. Microw. Theory Techn. |
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57 |
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1 |
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89-98 |
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HEB, mixer, waveguide, balanced, NbN |
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In this paper, we report about the development, fabrication, and characterization of a balanced waveguide hot electron bolometer (HEB) receiver for the Atacama Pathfinder EXperiment telescope covering the frequency band of 1.25–1.39 THz. The receiver uses a quadrature balanced scheme and two HEB mixers, fabricated from 4- to 5-nm-thick NbN film deposited on crystalline quartz substrate with an MgO buffer layer in between. We employed a novel micromachining method to produce all-metal waveguide parts at submicrometer accuracy (the main-mode waveguide dimensions are 90×180 μm). We present details on the mixer design and measurement results, including receiver noise performance, stability and “first-light†at the telescope site. The receiver yields a double-sideband noise temperature averaged over the RF band below 1200 K, and outstanding stability with a spectroscopic Allan time more than 200 s. |
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0018-9480 |
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RPLAB @ lobanovyury @ |
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554 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Kinetics of electron and hole binding into excitons in germanium |
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1983 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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57 |
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2 |
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369-376 |
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Ge, electron and hole binding |
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The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states. |
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1711 |
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Pentin, I. V.; Smirnov, A. V.; Ryabchun, S. A.; Ozhegov, R. V.; Gol’tsman, G. N.; Vaks, V. L.; Pripolzin, S. I.; Pavel’ev, D. G.; Koshurinov, Y. I.; Ivanov, A. S. |
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Title |
Semiconducting superlattice as a solid-state terahertz local oscillator for NbN hot-electron bolometer mixers |
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Journal Article |
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2012 |
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Tech. Phys. |
Abbreviated Journal |
Tech. Phys. |
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Volume |
57 |
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7 |
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971-974 |
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semiconducting superlattice frequency multiplier, NbN HEB mixers |
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We present the results of our studies of the semiconducting superlattice (SSL) frequency multiplier and its application as part of the solid state local oscillator (LO) in the terahertz heterodyne receiver based on a NbN hot-electron bolometer (HEB) mixer. We show that the SSL output power level increases as the ambient temperature is lowered to 4.2 K, the standard HEB operation temperature. |
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1063-7842 |
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1378 |
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Il’in, K.S.; Ptitsina, N.G.; Sergeev, A.V.; Gol’tsman, G.N.; Gershenzon, E.M.; Karasik, B.S.; Pechen, E.V.; Krasnosvobodtsev, S.I. |
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Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films |
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Journal Article |
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Year |
1998 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
57 |
Issue |
24 |
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15623-15628 |
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NbC films |
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A complex study of the electron-phonon interaction in thin NbC films with electron mean free path l=2–13nm gives strong evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference T2 term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5–10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence ∼Tn, with the exponent n=2.5–3. This behavior is explained well by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data. |
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0163-1829 |
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1585 |
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Smirnov, A. V.; Karmantsov, M. S.; Smirnov, K. V.; Vakhtomin, Y. B.; Masterov, D. V.; Tarkhov, M. A.; Pavlov, S. A.; Parafin, A. E. |
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Terahertz response of thin-film YBCO bolometers |
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Journal Article |
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2012 |
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Tech. Phys. |
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Tech. Phys. |
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57 |
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12 |
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1716-1719 |
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YBCO HEB |
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The bolometric response of high-temperature thin-film YBCO superconducting detectors to an electromagnetic radiation with a frequency of 2.5 THz is measured for the first time. The minimum value of the noise-equivalent power of the detectors is 3.5 × 10−9 W/Hz−−−√. The feasibility of further increasing the sensitivity of the detectors is discussed. |
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1063-7842 |
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1817 |
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Goltsman, G.; Korneev, A.; Divochiy, A.; Minaeva, O.; Tarkhov, M.; Kaurova, N.; Seleznev, V.; Voronov, B.; Okunev, O.; Antipov, A.; Smirnov, K.; Vachtomin, Yu.; Milostnaya, I.; Chulkova, G. |
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Title |
Ultrafast superconducting single-photon detector |
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2009 |
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J. Modern Opt. |
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J. Modern Opt. |
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56 |
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15 |
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1670-1680 |
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SSPD, SNSPD |
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The state-of-the-art of the NbN nanowire superconducting single-photon detector technology (SSPD) is presented. The SSPDs exhibit excellent performance at 2 K temperature: 30% quantum efficiency from visible to infrared, negligible dark count rate, single-photon sensitivity up to 5.6 µm. The recent achievements in the development of GHz counting rate devices with photon-number resolving capability is presented. |
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0950-0340 |
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RPLAB @ akorneev @ |
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607 |
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Dauler, Eric; Kerman, Andrew; Robinson, Bryan; Yang, Joel; Voronov, Boris; Goltsman, Gregory; Hamilton, Scott; Berggren, Karl |
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Photon-number-resolution with sub-30-ps timing using multi-element superconducting nanowire single photon detectors |
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2009 |
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J. Modern Opt. |
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J. Modern Opt. |
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56 |
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2 |
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364-373 |
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PNR SSPD; SNSPD; photon-number-resolution; superconducting nanowire single photon detector; timing jitter; system detection efficiency |
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A photon-number-resolving detector based on a four-element superconducting nanowire single photon detector is demonstrated to have sub-30-ps resolution in measuring the arrival time of individual photons. This detector can be used to characterize the photon statistics of non-pulsed light sources and to mitigate dead-time effects in high-speed photon counting applications. Furthermore, a 25% system detection efficiency at 1550 nm was demonstrated, making the detector useful for both low-flux source characterization and high-speed photon-counting and quantum communication applications. The design, fabrication and testing of this detector are described, and a comparison between the measured and theoretical performance is presented. |
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RPLAB @ gujma @ |
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700 |
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Marsili, F.; Bitauld, D.; Fiore, A.; Gaggero, A.; Leoni, R.; Mattioli, F.; Divochiy, A.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Goltsman, G. |
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Superconducting parallel nanowire detector with photon number resolving functionality |
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2009 |
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J. Modern Opt. |
Abbreviated Journal |
J. Modern Opt. |
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Volume |
56 |
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2-3 |
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334-344 |
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Keywords |
PNR; SSPD; SNSPD; thin superconducting films; photon number resolving detector; multiplication noise; telecom wavelength; NbN |
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We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. Electrical and optical equivalents of the device were developed in order to gain insight on its working principle. PNDs were fabricated on 3-4 nm thick NbN films grown on sapphire (substrate temperature TS=900C) or MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. The photoresponse shows a full width at half maximum (FWHM) as low as 660ps. PNDs showed counting performance at 80 MHz repetition rate. Building the histograms of the photoresponse peak, no multiplication noise buildup is observable and a one photon quantum efficiency can be estimated to be QE=3% (at 700 nm wavelength and 4.2 K temperature). The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise. |
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RPLAB @ gujma @ |
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701 |
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Rasulova, G. K.; Brunkov, P. N.; Pentin, I. V.; Kovalyuk, V. V.; Gorshkov, K. N.; Kazakov, A. Y.; Ivanov, S. Y.; Egorov, A. Y.; Sakseev, D. A.; Konnikov, S. G. |
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Mutual synchronization of two coupled self-oscillators based on GaAs/AlGaAs superlattices |
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2011 |
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Tech. Phys. |
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Tech. Phys. |
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56 |
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6 |
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826-830 |
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GaAs/AlGaAs superlattices |
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The interaction of self-oscillators based on 30-period weakly coupled GaAs/AlGaAs superlattices is studied. The action of one self-oscillator on the other was observed for a constant bias voltage in the absence of generation of self-sustained oscillations in one of the oscillators. It is shown that induced oscillations in a forced oscillator appear due to excitation of oscillations in the system of coupled oscillators forming the electric-field domain wall at the frequency of one of the higher harmonics of a forcing oscillation. |
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