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Author |
Gershenzon, E.; Goltsman, G.; Elantev, A.; Kagane, M. |
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Title |
Energy-spectrum of small donors and acceptors in germanium and effect of magnetic-field on it |
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1978 |
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Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Abbreviated Journal |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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42 |
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6 |
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1142-1148 |
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Keywords |
energy spectrum, Ge, magnetic field |
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1722 |
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Author |
Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. |
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Title |
Population of excited-states of small admixtures in germanium |
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Conference Article |
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Year |
1978 |
Publication |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Abbreviated Journal |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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Volume |
42 |
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6 |
Pages |
1154-1159 |
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Keywords |
Ge, excited states, admixtures |
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Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia |
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1723 |
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Author |
Blagosklonskaya, L. E.; Gershenzon, E. M.; Goltsman, G. N.; Elantev, A. I. |
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Title |
Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors |
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Conference Article |
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Year |
1978 |
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Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Abbreviated Journal |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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Volume |
42 |
Issue |
6 |
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1231-1234 |
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Keywords |
spectrum, semiconductors, admixtures, strong magnetic-field |
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Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia |
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blagosklonskaya1978effect |
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1724 |
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Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M. |
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Title |
On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data |
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1996 |
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J. of Communications Technology and Electronics |
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J. of Communications Technology and Electronics |
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Volume |
41 |
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5 |
Pages |
408-414 |
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Keywords |
submillimeter waves, transmission |
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A method for the reconstruction of microstructural properties of an oil-bearing rock from the spectral dependence of the transmission factor of submillimeter waves is proposed. |
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1064-2269 |
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Радиотехника и электроника 41, no. 4 (1996): 441-447 |
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1611 |
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Author |
Gol'tsman, G. N. |
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Title |
Hot electron bolometric mixers: new terahertz technology |
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1999 |
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Infrared Physics & Technology |
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Infrared Physics & Technology |
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40 |
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3 |
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199-206 |
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Keywords |
NbN HEB mixers |
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This paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixers has crossed the level of 1 K GHz−1 at 430 GHz (410 K), 600–650 GHz (480 K), 750 GHz (600 K), 810 GHz (780 K) and is close to that level at 1.1 THz (1250 K) and 2.5 THz (4500 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and about 100 nW for mixers made by e-beam lithography. A waveguide version of 800 GHz receiver was installed at the Submillimeter Telescope Observatory on Mt. Graham, AZ, to conduct astronomical observations of known submillimeter lines (CO, J=7→6, CI, J=2→1). It was proved that the receiver works as a practical instrument. |
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1350-4495 |
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1570 |
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