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Author |
Флоря, И. Н. |
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Title |
Ультрабыстрый однофотонный детектор для оптических применений |
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Conference Article |
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Year |
2009 |
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Науч. сессия МИФИ |
Abbreviated Journal |
Науч. сессия МИФИ |
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45-46 |
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SSPD |
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Представлен сверхпроводниковый однофотонный детектор (SSPD) на основе ультратонкой пленки NbN, обладающий рекордным быстродействием. Активный элемент выполнен в виде N сверхпроводящих полосок соединенных параллельно, покрывающих площадку размером 10 мкм х 10 мкм. Для SSPD с N=12 длительность импульса напряжения составляет 200 пс. Полученные результаты открывают путь к детекторам обладающими скоростью счета свыше 1 ГГц, что делает SSPDs весьма привлекательными во многих применениях, в частности для квантовой криптографии. SSPD хорошо согласуется с оптоволокном и легко может быть интегрирован в полностью готовую для работы приемную систему. |
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978-5-7262-1042-1 |
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УДК 533.14(06)+004.056(06) Фотоника и информационная оптика |
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1145 |
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Feresten, Nancy Laties; Thornton, Jennifer A.; Emmett, Jennifer; Lamichhane, Priyanka; Epstein, Lori; Kiesow, Annette; Olesin, Kate; Hill, Grace (eds) |
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Title |
Everything: Rocks and Minerals |
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2011 |
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Nat. Geogr. Partners |
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1-64 |
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children |
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Feresten, Nancy Laties; Thornton, Jennifer A.; Emmett, Jennifer; Lamichhane, Priyanka; Epstein, Lori; Kiesow, Annette; Olesin, Kate; Hill, Grace |
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1146 |
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Author |
O'Neal, Claire |
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A project guide to rocks and minerals |
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2010 |
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Mitchell Lane Publishers |
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1-47 |
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children |
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1147 |
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Author |
Семенов, Александр Владимирович |
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Проскальзывание фазы, поглощение электромагнитного излучения и формирование отклика в детекторах на основе узких полосок сверхпроводников |
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2010 |
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М. МПГУ |
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SSPD, SNSPD, response |
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Ph.D. thesis |
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Russian |
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1150 |
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Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Title |
Silicon room temperature IR detectors coated with Ag2S quantum dots |
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Conference Article |
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Year |
2019 |
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Proc. IWQO |
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Proc. IWQO |
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369-371 |
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silicon detector, quantum dot, IR, surface states |
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For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. |
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978-5-89513-451-1 |
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1154 |
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