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Author Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. url  doi
openurl 
  Title Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate Type Journal Article
  Year 1997 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume (down) 56 Issue 16 Pages 10089-10096  
  Keywords disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity  
  Abstract The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.  
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  Series Volume Series Issue Edition  
  ISSN 0163-1829 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1766  
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Author Shah, Jagdeep; Pinczuk, A.; Gossard, A. C.; Wiegmann, W. openurl 
  Title Energy-loss rates for hot electrons and holes in GaAs quantum wells Type Journal Article
  Year 1985 Publication Phys. Rev. Lett. Abbreviated Journal Phys. Rev. Lett.  
  Volume (down) 54 Issue Pages 2045-2048  
  Keywords 2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions  
  Abstract We report the first direct determination of carrier-energy-loss rates in a semiconductor. These measurements provide fundamental insight into carrier-phonon interactions in semiconductors. Unexpectedly large differences are found in the energy-loss rates for electrons and holes in GaAs/AlGaAs quantum wells. This large difference results from an anomalously low electron-energy-loss rate, which we attribute to the presence of nonequilibrium optical phonons rather than the effects of reduced dimensionality or dynamic screening.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 633  
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Author Ozhegov, R. V.; Okunev, O. V.; Gol’tsman, G. N.; Filippenko, L. V.; Koshelets, V. P. url  doi
openurl 
  Title Noise equivalent temperature difference of a superconducting integrated terahertz receiver Type Journal Article
  Year 2009 Publication J. Commun. Technol. Electron. Abbreviated Journal J. Commun. Technol. Electron.  
  Volume (down) 54 Issue 6 Pages 716-720  
  Keywords SIS mixer SIR NETD, FFO, harmonic mixer  
  Abstract The dependence of the noise equivalent temperature difference (NETD) of a superconducting integrated receiver (SIR) on the receiver noise temperature and the inputsignal level has been investigated. An unprecedented NETD of 13±2 mK has been measured at a SIR noise temperature of 200 K, intermediate-frequency bandwidth of 4 GHz, and time constant of 1 s. With a decrease in the input signal, an improvement in the NETD is observed. This effect is explained by a reduction in the influence of the instabilities of the receiver power supply and the amplification circuit that occur when the input signal is decreased.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1064-2269 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1400  
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Author Smirnov, A. V.; Baryshev, A. M.; de Bernardis, P.; Vdovin, V. F.; Gol'tsman, G. N.; Kardashev, N. S.; Kuz'min, L. S.; Koshelets, V. P.; Vystavkin, A. N.; Lobanov, Yu. V.; Ryabchun, S. A.; Finkel, M. I.; Khokhlov, D. R. doi  openurl
  Title The current stage of development of the receiving complex of the millimetron space observatory Type Journal Article
  Year 2012 Publication Radiophys. Quant. Electron. Abbreviated Journal Radiophys. Quant. Electron.  
  Volume (down) 54 Issue 8 Pages 557-568  
  Keywords Millimetron space observatory, HEB applications  
  Abstract We present an overview of the state of the onboard receiving complex of the Millimetron space observatory in the development phase of its preliminary design. The basic parameters of the onboard equipment planned to create and required for astrophysical observations are considered. A review of coherent and incoherent detectors, which are central to each receiver of the observatory, is given. Their characteristics and limiting parameters feasible at the present level of technology are reported.  
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  Notes Approved no  
  Call Number Serial 1079  
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Author Nikogosyan, A. S.; Martirosyan, R. M.; Hakhoumian, A. A.; Makaryan, A. H.; Tadevosyan, V. R.; Goltsman, G. N.; Antipov, S. V. url  doi
openurl 
  Title Effect of absorption on the efficiency of terahertz radiation generation in the metal waveguide partially filled with nonlinear crystal LiNbO3, DAST or ZnTe Type Journal Article
  Year 2019 Publication J. Contemp. Phys. Abbreviated Journal J. Contemp. Phys.  
  Volume (down) 54 Issue 1 Pages 97-104  
  Keywords nonlinear crystal, THz, waveguide  
  Abstract The influence of terahertz (THz) radiation absorption on the efficiency of generation of coherent THz radiation in the system ‘nonlinear-optical crystal partially filling the cross section of a rectangular metal waveguide’ has been investigated. The efficiency of the nonlinear frequency conversion of optical laser radiation to the THz range depends on the loss in the system and the fulfillment of the phase-matching (FM) condition in a nonlinear crystal. The method of partially filling of a metal waveguide with a nonlinear optical crystal is used to ensure phase matching. The phase matching is achieved by numerical determination of the thickness of the nonlinear crystal, that is the degree of partial filling of the waveguide. The attenuation of THz radiation caused by losses both in the metal walls of the waveguide and in the crystal was studied, taking into account the dimension of the cross section of the waveguide, the degree of partial filling, and the dielectric constant of the crystal. It is shown that the partial filling of the waveguide with a nonlinear crystal results in an increase in the efficiency of generation of THz radiation by an order of magnitude, owing to the decrease in absorption.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1068-3372 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1289  
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