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Zinoni, C.; Alloing, B.; Li, L. H.; Marsili, F.; Fiore, A.; Lunghi, L.; Gerardino, A.; Vakhtomin, Y. B.; Smirnov, K. V.; Gol’tsman, G. N. |
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Title |
Single-photon experiments at telecommunication wavelengths using nanowire superconducting detectors |
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2007 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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91 |
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3 |
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031106 (1 to 3) |
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SSPD, SNSPD, APD |
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The authors report fiber-coupled superconducting single-photon detectors with specifications that exceed those of avalanche photodiodes, operating at telecommunication wavelength, in sensitivity, temporal resolution, and repetition frequency. The improved performance is demonstrated by measuring the intensity correlation function g(2)(τ) of single-photon states at 1300nm produced by single semiconductor quantum dots.
This work was supported by Swiss National Foundation through the “Professeur borsier” and NCCR Quantum Photonics program, FP6 STREP “SINPHONIA” (Contract No. NMP4-CT-2005-16433), IP “QAP” (Contract No. 15848), NOE “ePIXnet,” and the Italian MIUR-FIRB program. |
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Erratum: 1395 |
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1396 |
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Ejrnaes, M.; Cristiano, R.; Quaranta, O.; Pagano, S.; Gaggero, A.; Mattioli, F.; Leoni, R.; Voronov, B.; Gol’tsman, G. |
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Title |
A cascade switching superconducting single photon detector |
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2007 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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Volume |
91 |
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26 |
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262509 (1 to 3) |
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Keywords |
SSPD, SNSPD, parallel-wire |
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We have realized superconducting single photon detectors with reduced inductance and increased signal pulse amplitude. The detectors are based on a parallel connection of ultrathin NbN nanowires with a common bias inductance. When properly biased, an absorbed photon induces a cascade switch of all the parallel wires generating a signal pulse amplitude of 2mV. The parallel wire configuration lowers the detector inductance and reduces the response time well below 1ns.
This work was performed in the framework of the EU project “SINPHONIA” NMP4-CT-2005-016433. |
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1418 |
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Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Klapwijk, T. M.; Voronov, B.; Grishin, E.; Gol’tsman, G.; Zorman, C. A.; Mehregany, M. |
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Title |
Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate |
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2007 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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91 |
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6 |
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062504 (1 to 3) |
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NbN films, nanofilms |
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The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.
The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS. |
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1425 |
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Tarkhov, M.; Claudon, J.; Poizat, J. Ph.; Korneev, A.; Divochiy, A.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Semenov, A. V.; Gol'tsman, G. |
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Title |
Ultrafast reset time of superconducting single photon detectors |
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2008 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
92 |
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24 |
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241112 (1 to 3) |
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SSPD, SNSPD |
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429 |
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Li, T. F.; Pashkin, Yu. A.; Astafiev, O.; Nakamura, Y.; Tsai, J. S.; Im, H. |
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High-frequency metallic nanomechanical resonators |
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Journal Article |
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2008 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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92 |
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043112(1)-043112(3) |
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nanomechanical resonator, polycrystalline metal films |
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We developed a technology to fabricate fully metallic doubly clamped beams working as nanomechanical resonators. Measured with a magnetomotive detection scheme, the beams, made of polycrystalline metal films, show as good quality as previously reported ones made of single crystal materials, such as Si, GaAs, AlN, and SiC. Our method is compatible with the conventional fabrication process for nanoscale electronic circuits and thus offers a possibility of easily integrating the beams into superconducting charge and flux qubits and single-electron transistors as well as coupling them to coplanar waveguide resonators. |
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621 |
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Zinoni, C.; Alloing, B.; Li, L. H.; Marsili, F.; Fiore, A.; Lunghi, L.; Gerardino, A.; Vakhtomin, Y. B.; Smirnov, K. V.; Gol’tsman, G. N. |
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Erratum: “Single photon experiments at telecom wavelengths using nanowire superconducting detectors” [Appl. Phys. Lett. 91, 031106 (2007)] |
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2010 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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96 |
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8 |
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089901 |
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SSPD, SNSPD, erratum |
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A calculation error was made in the original publication of this letter. The error was in the calculation of the noise equivalent power (NEP) values for the avalanche photodiode detector (APD) and the superconducting single photon detector (SSPD), the incorrect values were plotted on the right axis in Fig. 1(b). The correct NEP values were calculated with the same equation reported in the original letter and the revised Fig. 1(b) is shown below. The other conclusions of the paper remain unaltered. |
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1395 |
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Kataoka, T; Kajikawa, K.; Kitagawa, J.; Kadoya, Y; Takemura, Y. |
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Improved sensitivity of terahertz detection by GaAs photoconductive antennas excited at 1560 nm |
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2010 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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97 |
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201110 (1-3) |
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photoconductive antenna (PCA) |
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The terahertz detection by photoconductive antennas (PCAs) based on low-temperature grown (LTG) GaAs with 1.5 μm pulse excitation was revisited. We found that the detection efficiency can be improved by a factor of 10 (20 dB) by reducing the excitation spot size and the gap length of the PCA, maintaining the low noise feature of the PCA on LTG GaAs. As a result, the signal-to-noise ratio higher than 50 dB was obtained at a reasonable incident power of 9.5 mW, suggesting that the scheme is promising for the detection of terahertz waves in practical time domain systems. |
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904 |
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Elvira, D.; Michon, A.; Fain, B.; Patriarche, G.; Beaudoin, G.; Robert-Philip, I.; Vachtomin, Y.; Divochiy, A. V.; Smirnov, K. V.; Gol’tsman, G. N.; Sagnes, I.; Beveratos, A. |
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Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm |
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2010 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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Volume |
97 |
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13 |
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131907 (1 to 3) |
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SSPD, SNSPD, InAsP/InP quantum dots |
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By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364. |
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1238 |
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Tretyakov, Ivan; Ryabchun, Sergey; Finkel, Matvey; Maslennikova, Anna; Kaurova, Natalia; Lobastova, Anastasia; Voronov, Boris; Gol'tsman, Gregory |
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Low noise and wide bandwidth of NbN hot-electron bolometer mixers |
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2011 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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98 |
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033507 (1 to 3) |
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NbN HEB mixer |
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We report a record double sideband noise temperature of 600 K (5hν/kB) offered by a NbN hot-electron bolometer receiver at 2.5 THz. Allowing for standing wave effects, this value was found to be constant in the intermediate frequency range 1–7 GHz, which indicates that the mixer has an unprecedentedly large noise bandwidth in excess of 7 GHz. The insight into this is provided by gain bandwidth measurements performed at the superconducting transition. They show that the dependence of the bandwidth on the mixer length follows the model for an HEB mixer with diffusion and phonon cooling of the hot electrons. |
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RPLAB @ gujma @ |
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638 |
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Rasulova, G. K.; Brunkov, P. N.; Pentin, I. V.; Egorov, A. Y.; Knyazev, D. A.; Andrianov, A. V.; Zakhar’in, A. O.; Konnikov, S. G.; Gol’tsman, G. N. |
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A weakly coupled semiconductor superlattice as a potential for a radio frequency modulated terahertz light emitter |
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2012 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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100 |
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13 |
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131104 (1 to 4) |
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semiconductor superlattice |
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The bolometer response to THz radiation from a weakly coupled GaAs/AlGaAs superlattice biased in the self-oscillations regime has been observed. The bolometer signal is modulated with the frequency equal to the fundamental frequency of superlattice self-oscillations. The frequency spectrum of the bolometer signal contains higher harmonics whose frequency is a multiple of fundamental frequency of self-oscillations.
This work was supported by State Contracts Nos. 16.740.11.0044 and 16.552.11.7002 of Ministry of Education and Science of the Russian Federation. Structural characterization was made on the equipment of the Joint Research Centre «Material science and characterization in advanced technology» (Ioffe Institute, St. Petersburg, Russia). |
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