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Author Lipatov, A.; Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Kouminov, P.; Gol'tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R.
Title An ultrafast NbN hot-electron single-photon detector for electronic applications Type Journal Article
Year 2002 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.
Volume (down) 15 Issue 12 Pages 1689-1692
Keywords NbN SSPD, SNSPD, QE, jitter, dark counts
Abstract We present the latest generation of our superconducting single-photon detector (SPD), which can work from ultraviolet to mid-infrared optical radiation wavelengths. The detector combines a high speed of operation and low jitter with high quantum efficiency (QE) and very low dark count level. The technology enhancement allows us to produce ultrathin (3.5 nm thick) structures that demonstrate QE hundreds of times better, at 1.55 μm, than previous 10 nm thick SPDs. The best, 10 × 10 μm2, SPDs demonstrate QE up to 5% at 1.55 μm and up to 11% at 0.86 μm. The intrinsic detector QE, normalized to the film absorption coefficient, reaches 100% at bias currents above 0.9 Ic for photons with wavelengths shorter than 1.3 μm.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-2048 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1533
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Author Aksaev, E. E.; Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V.
Title Prospects for using high-temperature superconductors to create electron bolometers Type Journal Article
Year 1989 Publication Pisma v Zhurnal Tekhnicheskoi Fiziki Abbreviated Journal Pisma v Zhurnal Tekhnicheskoi Fiziki
Volume (down) 15 Issue 14 Pages 88-93
Keywords HTS HEB
Abstract
Address
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Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0320-0116 ISBN Medium
Area Expedition Conference
Notes Перспективы применения высокотемпературных сверхпроводников для создания электронных болометров Approved no
Call Number Serial 1693
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Author Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Karasik, B. S.; Lyulkin, A. M.; Semenov, A. D.
Title Fast-response superconducting electron bolometer Type Journal Article
Year 1989 Publication Pisma v Zhurnal Tekhnicheskoi Fiziki Abbreviated Journal Pisma v Zhurnal Tekhnicheskoi Fiziki
Volume (down) 15 Issue 3 Pages 88-92
Keywords Nb HEB
Abstract The general design, operation, and performance characteristics of fast-response electronic bolometers using a thin superconducting Nb film on a leucosapphire substrate are briefly reviewed. The volt-watt sensitivity of the bolometrs is 2,000-200,000 V/W, the operating temperature is 1.6 K, and the time constant is 4-4.5 ns.
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Publisher Place of Publication Editor
Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1694
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Author Baeva, E. M.; Titova, N. A.; Veyrat, L.; Sacépé, B.; Semenov, A. V.; Goltsman, G. N.; Kardakova, A. I.; Khrapai, V. S.
Title Thermal relaxation in metal films limited by diffuson lattice excitations of amorphous substrates Type Journal Article
Year 2021 Publication Phys. Rev. Applied Abbreviated Journal Phys. Rev. Applied
Volume (down) 15 Issue 5 Pages 054014
Keywords InOx, Au/Ni, NbN films
Abstract We examine the role of a silicon-based amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The samples studied consist of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry is used to measure the electron temperature Te of the films as a function of Joule power per unit area P2D. In all samples, we observe a P2D∝Tne dependence, with exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear temperature dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for a phonon mean free path shorter than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2331-7019 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1769
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Author Yang, Y.; Fedorov, G.; Shafranjuk, S. E.; Klapwijk, T. M.; Cooper, B. K.; Lewis, R. M.; Lobb, C. J.; Barbara, P.
Title Electronic transport and possible superconductivity at Van Hove singularities in carbon nanotubes Type Journal Article
Year 2015 Publication Nano Lett. Abbreviated Journal Nano Lett.
Volume (down) 15 Issue 12 Pages 7859-7866
Keywords carbon nanotubes, CNT, tunable superconductivity, van Hove singularities
Abstract Van Hove singularities (VHSs) are a hallmark of reduced dimensionality, leading to a divergent density of states in one and two dimensions and predictions of new electronic properties when the Fermi energy is close to these divergences. In carbon nanotubes, VHSs mark the onset of new subbands. They are elusive in standard electronic transport characterization measurements because they do not typically appear as notable features and therefore their effect on the nanotube conductance is largely unexplored. Here we report conductance measurements of carbon nanotubes where VHSs are clearly revealed by interference patterns of the electronic wave functions, showing both a sharp increase of quantum capacitance, and a sharp reduction of energy level spacing, consistent with an upsurge of density of states. At VHSs, we also measure an anomalous increase of conductance below a temperature of about 30 K. We argue that this transport feature is consistent with the formation of Cooper pairs in the nanotube.
Address Department of Physics, Georgetown University , Washington, District of Columbia 20057, United States
Corporate Author Thesis
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Language Summary Language Original Title
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Series Volume Series Issue Edition
ISSN 1530-6984 ISBN Medium
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Notes PMID:26506109; Suuplementary info (attached to pdf) DOI: 10.1021/acs.nanolett.5b02564 Approved no
Call Number Serial 1782
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Author Rosfjord, Kristine M.; Yang, Joel K. W.; Dauler, Eric A.; Kerman, Andrew J.; Vikas Anant; Voronov, Boris M.; Gol'tsman, Gregory N.; Berggren, Karl K.
Title Nanowire Single-photon detector with an integrated optical cavity and anti-reflection coating Type Journal Article
Year 2006 Publication Opt. Express Abbreviated Journal Opt. Express
Volume (down) 14 Issue 2 Pages 527-534
Keywords SSPD, SNSPD, cavity
Abstract We have fabricated and tested superconducting single-photon detectors and demonstrated detection efficiencies of 57% at 1550-nm wavelength and 67% at 1064 nm. In addition to the peak detection efficiency, a median detection efficiency of 47.7% was measured over 132 devices at 1550 nm. These measurements were made at 1.8K, with each device biased to 97.5% of its critical current. The high detection efficiencies resulted from the addition of an optical cavity and anti-reflection coating to a nanowire photodetector, creating an integrated nanoelectrophotonic device with enhanced performance relative to the original device. Here, the testing apparatus and the fabrication process are presented. The detection efficiency of devices before and after the addition of optical elements is also reported.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1094-4087 ISBN Medium
Area Expedition Conference
Notes PMID:19503367 Approved no
Call Number Serial 388
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Elantiev, A. I.; Karasik, B. S.; Potoskuev, S. E.
Title Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state Type Journal Article
Year 1988 Publication Sov. J. Low Temp. Phys. Abbreviated Journal Sov. J. Low Temp. Phys.
Volume (down) 14 Issue 7 Pages 414-420
Keywords HEB
Abstract
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Notes Duplicated as 1697 Approved no
Call Number Serial 236
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Author Гершензон, Е. М.; Гольцман, Г. Н.; Елантьев, А. И.; Карасик, Б. С.; Потоскуев, С. Э.
Title Разогрев электронов в резистивном состоянии сверхпроводника электромагнитным излучением значительной интенсивности Type Journal Article
Year 1988 Publication Физика низких температур Abbreviated Journal Физика низких температур
Volume (down) 14 Issue 7 Pages 753-763
Keywords HEB
Abstract
Address
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
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Notes Duplicated as 1697 Approved no
Call Number Serial 883
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Karasik, B. S.; Potoskuev, S. E.
Title Intense electromagnetic radiation heating of superconductor electrons in resistive state Type Journal Article
Year 1988 Publication Fizika Nizkikh Temperatur Abbreviated Journal Fizika Nizkikh Temperatur
Volume (down) 14 Issue 7 Pages 753-763
Keywords Nb HEB
Abstract An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model.
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Notes Approved no
Call Number Serial 1697
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P.
Title Binding energy of a carrier with a neutral impurity atom in germanium and in silicon Type Journal Article
Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume (down) 14 Issue 5 Pages 185-186
Keywords Ge, Si, neutral impurity atom, binding energy
Abstract
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Notes Approved no
Call Number Serial 1739
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Author Gershenzon, E. M.; Gol'tsman, G. N.
Title Transitions of electrons between excited states of donors in germanium Type Journal Article
Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume (down) 14 Issue 2 Pages 63-65
Keywords Ge, donors, excited states
Abstract
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Notes Approved no
Call Number Serial 1740
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M.
Title Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium Type Journal Article
Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume (down) 14 Issue 6 Pages 241
Keywords Ge, gamma irradiation, defects, impurities
Abstract
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Language Summary Language Original Title
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Notes Approved no
Call Number Serial 1742
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Author Vodolazov, D. Y.; Manova, N. N.; Korneeva, Y. P.; Korneev, A. A.
Title Timing jitter in NbN superconducting microstrip single-photon detector Type Journal Article
Year 2020 Publication Phys. Rev. Applied Abbreviated Journal Phys. Rev. Applied
Volume (down) 14 Issue 4 Pages 044041 (1 to 8)
Keywords NbN SSPD, SNSPD
Abstract We experimentally study timing jitter of single-photon detection by NbN superconducting strips with width w ranging from 190 nm to 3μm. We find that timing jitter of both narrow (190 nm) and micron-wide strips is about 40 ps at currents where internal detection efficiency η saturates and it is close to our instrumental jitter. We also calculate intrinsic timing jitter in wide strips using the modified time-dependent Ginzburg-Landau equation coupled with a two-temperature model. We find that with increasing width the intrinsic timing jitter increases and the effect is most considerable at currents where a rapid growth of η changes to saturation. We relate it with complicated vortex and antivortex dynamics, which depends on a photon’s absorption site across the strip and its width. The model also predicts that at current close to depairing current the intrinsic timing jitter of a wide strip could be about ℏ/kBTc (Tc is a critical temperature of superconductor), i.e., the same as for a narrow strip.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2331-7019 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1788
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Author Sobolewski, R.; Verevkin, A.; Gol'tsman, G.N.; Lipatov, A.; Wilsher, K.
Title Ultrafast superconducting single-photon optical detectors and their applications Type Journal Article
Year 2003 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal
Volume (down) 13 Issue 2 Pages 1151-1157
Keywords NbN SSPD, SNSPD
Abstract We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 509
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Author Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G.
Title Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer Type Journal Article
Year 2003 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume (down) 13 Issue 2 Pages 164-167
Keywords NbN HEB mixer
Abstract In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions.
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Notes Approved no
Call Number Serial 341
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