| Records |
| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Karasik, B. S.; Potoskuev, S. E. |
| Title |
Intense electromagnetic radiation heating of superconductor electrons in resistive state |
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Journal Article |
| Year |
1988 |
Publication |
Fizika Nizkikh Temperatur |
Abbreviated Journal |
Fizika Nizkikh Temperatur |
Volume  |
14 |
Issue |
7 |
Pages |
753-763 |
| Keywords |
Nb HEB |
| Abstract |
An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model. |
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1697 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
| Title |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
Type |
Journal Article |
| Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
14 |
Issue |
5 |
Pages |
185-186 |
| Keywords |
Ge, Si, neutral impurity atom, binding energy |
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1739 |
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Gershenzon, E. M.; Gol'tsman, G. N. |
| Title |
Transitions of electrons between excited states of donors in germanium |
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Journal Article |
| Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
14 |
Issue |
2 |
Pages |
63-65 |
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Ge, donors, excited states |
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1740 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
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Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
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Journal Article |
| Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
14 |
Issue |
6 |
Pages |
241 |
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Ge, gamma irradiation, defects, impurities |
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1742 |
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Vodolazov, D. Y.; Manova, N. N.; Korneeva, Y. P.; Korneev, A. A. |
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Timing jitter in NbN superconducting microstrip single-photon detector |
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Journal Article |
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2020 |
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Phys. Rev. Applied |
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Phys. Rev. Applied |
| Volume |
14 |
Issue |
4 |
Pages |
044041 (1 to 8) |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We experimentally study timing jitter of single-photon detection by NbN superconducting strips with width w ranging from 190 nm to 3μm. We find that timing jitter of both narrow (190 nm) and micron-wide strips is about 40 ps at currents where internal detection efficiency η saturates and it is close to our instrumental jitter. We also calculate intrinsic timing jitter in wide strips using the modified time-dependent Ginzburg-Landau equation coupled with a two-temperature model. We find that with increasing width the intrinsic timing jitter increases and the effect is most considerable at currents where a rapid growth of η changes to saturation. We relate it with complicated vortex and antivortex dynamics, which depends on a photon’s absorption site across the strip and its width. The model also predicts that at current close to depairing current the intrinsic timing jitter of a wide strip could be about ℏ/kBTc (Tc is a critical temperature of superconductor), i.e., the same as for a narrow strip. |
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2331-7019 |
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1788 |
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