Home << 1 2 3 4 5 6 7 8 9 10 >> [11–13]
List View
 | 
Citations
 | 
Details
   web
Records
Author Смирнов, К. В.
Title AlGaAs/GaAs смеситель на эффекте разогрева двумерных электронов для тепловизора субмиллиметрового диапазона Type Abstract
Year 2003 Publication Тезисы докладов VI Российской конференции по физике полупроводников Abbreviated Journal
Volume (up) Issue Pages 181
Keywords 2DEG, AlGaAs/GaAs heterostructures, mixer
Abstract
Address ФТИ им. А. Ф. Иоффе, Санк-Петербург
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference VI Российской конференции по физике полупроводников (27-31 октября)
Notes Unconfirmed; Сама конференция, однако, была -- её упоминают: [http://www.nsc.ru/HBC/article.phtml?nid=271&id=17], [https://www.isp.nsc.ru/institut/nauchnye-podrazdeleniya/lab-20/publikatsii/2003], [http://www.ioffe.ru/sem_tech/sem%5Fteh%5Fmovpe%5Fpublications%5Fru.htm#R2003], [https://istina.ips.ac.ru/collections/828771/] Approved no
Call Number Serial 1837
Permanent link to this record
 
 
Author Бурмистрова, А. В.; Девятов, И. А.
Title Расчет электронного транспорта в гетероструктурах, содержащих многозонные сверхпроводники Type Conference Article
Year 2014 Publication Труды XVIII международного симпозиума «Нанофизика и наноэлектроника» Abbreviated Journal
Volume (up) 1 Issue Pages 21-22
Keywords N/I/Sp junctions
Abstract В рамках приближения сильной связи теоретически рассчитаны проводимости контактов вида нормальный металл/изолятор/одноорбитальный сверхпроводник с p-типом сверхпроводящего спаривания (N/I/Sp). Объяснено наблюдаемое экспериментально как появление пика при нулевом напряжении, так и его расщепление в зависимости от толщины слоя изолятора. В рамках этой же микроскопической теории развит вариант техники решеточной функции Грина в мацубаровом представлении. Используя разработанный подход, рассчитаны фазовые и температурные зависимости тока Джозефсона для контакта сверхпроводника s-типа и многозонного железосодержащего сверхпроводника (ферропниктида) для различных ориентаций границы по отношению к кристаллографическим осям пниктида.
Address Нижний Новгород, Россия
Corporate Author Thesis
Publisher Place of Publication Editor
Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1834
Permanent link to this record
 
 
Author Zolotov, P.; Divochiy, A.; Vakhtomin, Y.; Seleznev, V.; Morozov, P.; Smirnov, K.
Title Superconducting single-photon detectors made of ultra-thin VN films Type Conference Article
Year 2018 Publication KnE Energy Abbreviated Journal KnE Energy
Volume (up) 3 Issue 3 Pages 83-89
Keywords
Abstract We optimized technology of thin VN films deposition in order to study VN-based superconducting single-photon detectors. Investigation of the main VN film parameters showed that this material has lower resistivity compared to commonly used NbN. Fabricated from obtained films devices showed 100% intrinsic detection efficiency at 900 nm, at the temperature of 1.7 K starting with the bias current of 0.7·I
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1230
Permanent link to this record
 
 
Author Budyanskij, M. Ya.; Sejdman, L. A.; Voronov, B. M.; Gubkina, T. O.
Title Increase of reproducibility in production of superconducting thin films of niobium nitride Type Journal Article
Year 1992 Publication Sverkhprovodimost': Fizika, Khimiya, Tekhnika Abbreviated Journal Sverkhprovodimost': Fizika, Khimiya, Tekhnika
Volume (up) 5 Issue 10 Pages 1950-1954
Keywords NbN films
Abstract Technique to control the composition of gas medium in the reactive magnetron discharge and the composition of the deposited films of niobium nitride using electrical parameters of discharge only, in particular, by δU = Up – Uar value at contant stabilized discharge current is described. Technique to select optimal condition for deposition of niobium nitride films when the films have composition meeting chemical formula, is suggested. Thin films of niobium nitride with up to 7 nm thickness and with rather high temperature of transition into superconducting state Tk > 10 K) and with low width of transition (δ < 0.6 K), are obtained. It is determined, that substrate material and dielectric sublayer do not affect. Tk value, while difference in coefficients of thermal expansion of substrate and of film affects δTk value.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0131-5366 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1675
Permanent link to this record
 
 
Author Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G.
Title Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields Type Journal Article
Year 1972 Publication Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников Abbreviated Journal Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников
Volume (up) 6 Issue Pages 362-363
Keywords Ge, cyclotron resonance, quantizing magnetic fields
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1774
Permanent link to this record
 
 
Author Klapwijk, T. M.; Semenov, A. V.
Title Engineering physics of superconducting hot-electron bolometer mixers Type Journal Article
Year 2017 Publication IEEE Trans. THz Sci. Technol. Abbreviated Journal IEEE Trans. THz Sci. Technol.
Volume (up) 7 Issue 6 Pages 627-648
Keywords HEB mixers
Abstract Superconducting hot-electron bolometers are presently the best performing mixing devices for the frequency range beyond 1.2 THz, where good-quality superconductor-insulator-superconductor devices do not exist. Their physical appearance is very simple: an antenna consisting of a normal metal, sometimes a normal-metal-superconductor bilayer, connected to a thin film of a narrow short superconductor with a high resistivity in the normal state. The device is brought into an optimal operating regime by applying a dc current and a certain amount of local-oscillator power. Despite this technological simplicity, its operation has found to be controlled by many different aspects of superconductivity, all occurring simultaneously. A core ingredient is the understanding that there are two sources of resistance in a superconductor: a charge-conversion resistance occurring at a normal-metal-superconductor interface and a resistance due to time-dependent changes of the superconducting phase. The latter is responsible for the actual mixing process in a nonuniform superconducting environment set up by the bias conditions and the geometry. The present understanding indicates that further improvement needs to be found in the use of other materials with a faster energy relaxation rate. Meanwhile, several empirical parameters have become physically meaningful indicators of the devices, which will facilitate the technological developments.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2156-342X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1292
Permanent link to this record
 
 
Author Finkel, M.; Thierschmann, H.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M.
Title Performance of THz components based on microstrip PECVD SiNx technology Type Journal Article
Year 2017 Publication IEEE Trans. THz Sci. Technol. Abbreviated Journal IEEE Trans. THz Sci. Technol.
Volume (up) 7 Issue 6 Pages 765-771
Keywords transmission line measurements, power transmission lines, dielectrics, couplers, submillimeter wave circuits, coplanar waveguides, micromechanical devices
Abstract We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2156-342X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1294
Permanent link to this record
 
 
Author Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I.
Title Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation Type Journal Article
Year 2021 Publication Adv. Electron. Mater. Abbreviated Journal Adv. Electron. Mater.
Volume (up) 7 Issue 3 Pages 2000872
Keywords SWCNT transistors
Abstract The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2199-160X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1843
Permanent link to this record
 
 
Author Sidorova, Maria V.; Divochiy, Alexander V.; Vakhtomin, Yury B.; Smirnov, Konstantin V.
Title Ultrafast superconducting single-photon detector with a reduced active area coupled to a tapered lensed single-mode fiber Type Journal Article
Year 2015 Publication J. Nanophoton. Abbreviated Journal
Volume (up) 9 Issue 1 Pages 093051
Keywords SSPD, SNSPD
Abstract This paper presents an ultrafast niobium nitride (NbN) superconducting single-photon detector (SSPD) with an active area of 3×3  μm2 that offers better timing performance metrics than the previous SSPD with an active area of 7×7  μm2. The improved SSPD demonstrates a record timing jitter (<25  ps), an ultrashort recovery time (<2  ns), an extremely low dark count rate, and a high detection efficiency in a wide spectral range from visible part to near infrared. The record parameters were obtained due to the development of a new technique providing effective optical coupling between a detector with a reduced active area and a standard single-mode telecommunication fiber. The advantages of the new approach are experimentally confirmed by taking electro-optical measurements.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1934-2608 ISBN Medium
Area Expedition Conference
Notes 10.1117/1.JNP.9.093051 Approved no
Call Number RPLAB @ sasha @ Serial 1052
Permanent link to this record
 
 
Author Ren, Y.; Zhang, D. X.; Zhou, K. M.; Miao, W.; Zhang, W.; Shi, S. C.; Seleznev, V.; Pentin, I.; Vakhtomin, Y.; Smirnov, K.
Title 10.6 μm heterodyne receiver based on a superconducting hot-electron bolometer mixer and a quantum cascade laser Type Journal Article
Year 2019 Publication AIP Advances Abbreviated Journal AIP Advances
Volume (up) 9 Issue 7 Pages 075307
Keywords NbN HEB mixers, QCL, IR
Abstract We report on the development of a heterodyne receiver at mid-infrared wavelength for high-resolution spectroscopy applications. The receiver employs a superconducting NbN hot electron bolometer as a mixer and a room temperature distributed feedback quantum cascade laser operating at 10.6 μm (28.2 THz) as a local oscillator. The stabilization of the heterodyne receiver has been achieved using a feedback loop controlling the output power of the laser. Improved Allan variance times as well as a double sideband receiver noise temperature of 5000 K and a noise bandwidth of 2.8 GHz of the receiver system are demonstrated.

The work is supported in part by the National Key R&D Program of China under Grant 2018YFA0404701, by the CAS program under Grant QYZDJ-SSW-SLH043 and GJJSTD20180003, by the National Natural Science Foundation of China (NSFC) under Grant 11773083, by the “Hundred Talents Program” of the “Pioneer Initiative”, and in part by the CAS Key Lab for Radio Astronomy.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2158-3226 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1293
Permanent link to this record