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Author Tretyakov, Ivan; Ryabchun, Sergey; Finkel, Matvey; Maslennikova, Anna; Kaurova, Natalia; Lobastova, Anastasia; Voronov, Boris; Gol'tsman, Gregory
Title Low noise and wide bandwidth of NbN hot-electron bolometer mixers Type Journal Article
Year 2011 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume (up) 98 Issue Pages 033507 (1 to 3)
Keywords NbN HEB mixer
Abstract We report a record double sideband noise temperature of 600 K (5hν/kB) offered by a NbN hot-electron bolometer receiver at 2.5 THz. Allowing for standing wave effects, this value was found to be constant in the intermediate frequency range 1–7 GHz, which indicates that the mixer has an unprecedentedly large noise bandwidth in excess of 7 GHz. The insight into this is provided by gain bandwidth measurements performed at the superconducting transition. They show that the dependence of the bandwidth on the mixer length follows the model for an HEB mixer with diffusion and phonon cooling of the hot electrons.
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Call Number RPLAB @ gujma @ Serial 638
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Author Sidorova, M.; Semenov, A.; Hübers, H.-W.; Kuzmin, A.; Doerner, S.; Ilin, K.; Siegel, M.; Charaev, I.; Vodolazov, D.
Title Timing jitter in photon detection by straight superconducting nanowires: Effect of magnetic field and photon flux Type Journal Article
Year 2018 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume (up) 98 Issue 13 Pages 134504 (1 to 14)
Keywords SNSPD, NbN namowires
Abstract We studied the effects of the external magnetic field and photon flux on timing jitter in photon detection by straight superconducting NbN nanowires. At two wavelengths 800 and 1560 nm, statistical distribution in the appearance times of photon counts exhibits Gaussian shape at small times and an exponential tail at large times. The characteristic exponential time is larger for photons with smaller energy and increases with external magnetic field while variations in the Gaussian part of the distribution are less pronounced. Increasing photon flux drives the nanowire from the discrete quantum detection regime to the uniform bolometric regime that averages out fluctuations of the total number of nonequilibrium electrons created by the photon and drastically reduces jitter. The difference between standard deviations of Gaussian parts of distributions for these two regimes provides the measure for the strength of electron-number fluctuations; it increases with the photon energy. We show that the two-dimensional hot-spot detection model explains qualitatively the effect of magnetic field.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9950 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1842
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Author Rasulova, G. K.; Brunkov, P. N.; Pentin, I. V.; Egorov, A. Y.; Knyazev, D. A.; Andrianov, A. V.; Zakhar’in, A. O.; Konnikov, S. G.; Gol’tsman, G. N.
Title A weakly coupled semiconductor superlattice as a potential for a radio frequency modulated terahertz light emitter Type Journal Article
Year 2012 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume (up) 100 Issue 13 Pages 131104 (1 to 4)
Keywords semiconductor superlattice
Abstract The bolometer response to THz radiation from a weakly coupled GaAs/AlGaAs superlattice biased in the self-oscillations regime has been observed. The bolometer signal is modulated with the frequency equal to the fundamental frequency of superlattice self-oscillations. The frequency spectrum of the bolometer signal contains higher harmonics whose frequency is a multiple of fundamental frequency of self-oscillations.

This work was supported by State Contracts Nos. 16.740.11.0044 and 16.552.11.7002 of Ministry of Education and Science of the Russian Federation. Structural characterization was made on the equipment of the Joint Research Centre «Material science and characterization in advanced technology» (Ioffe Institute, St. Petersburg, Russia).
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1379
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Author Baselmans, J. J. A.; Baryshev, A.; Reker, S. F.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G.
Title Influence of the direct response on the heterodyne sensitivity of hot electron bolometer mixers Type Journal Article
Year 2006 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.
Volume (up) 100 Issue 8 Pages 084510 (1 to 7)
Keywords NbN HEB mixers
Abstract We present a detailed experimental study of the direct detection effect in a small volume (0.15μm×1μm×3.5nm) quasioptical NbN phonon cooled hot electron bolometer mixer at 673GHz. We find that the small signal noise temperature, relevant for an astronomical observation, is 20% lower than the noise temperature obtained using 300 and 77K calibration loads. In a separate set of experiments we show that the direct detection effect is caused by a combination of bias current reduction when switching from the 77 to the 300K

load in combination with the bias current dependence of the receiver gain. The bias current dependence of the receiver gain is shown to be mainly caused by the current dependence of the mixer gain.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1442
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Author Kooi, J. W.; Baselmans, J. J. A.; Baryshev, A.; Schieder, R.; Hajenius, M.; Gao, J.R.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G.
Title Stability of heterodyne terahertz receivers Type Journal Article
Year 2006 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.
Volume (up) 100 Issue 6 Pages 064904 (1 to 9)
Keywords NbN HEB mixers
Abstract In this paper we discuss the stability of heterodyne terahertz receivers based on small volume NbN phonon cooled hot electron bolometers (HEBs). The stability of these receivers can be broken down in two parts: the intrinsic stability of the HEB mixer and the stability of the local oscillator (LO) signal injection scheme. Measurements show that the HEB mixer stability is limited by gain fluctuations with a 1∕f spectral distribution. In a 60MHz noise bandwidth this results in an Allan variance stability time of ∼0.3s. Measurement of the spectroscopic Allan variance between two intermediate frequency (IF) channels results in a much longer Allan variance stability time, i.e., 3s between a 2.5 and a 4.7GHz channel, and even longer for more closely spaced channels. This implies that the HEB mixer 1∕f noise is strongly correlated across the IF band and that the correlation gets stronger the closer the IF channels are spaced. In the second part of the paper we discuss atmospheric and mechanical system stability requirements on the LO-mixer cavity path length. We calculate the mixer output noise fluctuations as a result of small perturbations of the LO-mixer standing wave, and find very stringent mechanical and atmospheric tolerance requirements for receivers operating at terahertz frequencies.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1444
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Author Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Krieg, J.-M.; Voronov, B.; Gol'tsman, G.; Desmaris, V.
Title Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes Type Journal Article
Year 2007 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.
Volume (up) 101 Issue 12 Pages 124508 (1 to 6)
Keywords HEB, mixer, membrane
Abstract The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach.
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Language Summary Language Original Title
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ISSN 0021-8979 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 560
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Author Shcherbatenko, M. L.; Elezov, M. S.; Goltsman, G. N.; Sych, D. V.
Title Sub-shot-noise-limited fiber-optic quantum receiver Type Journal Article
Year 2020 Publication Phys. Rev. A Abbreviated Journal Phys. Rev. A
Volume (up) 101 Issue 3 Pages 032306 (1 to 5)
Keywords SSPD mixer, SNSPD
Abstract We experimentally demonstrate a quantum receiver based on the Kennedy scheme for discrimination between two phase-modulated weak coherent states. The receiver is assembled entirely from standard fiber-optic elements and operates at a conventional telecom wavelength of 1.55 μm. The local oscillator and the signal are transmitted through different optical fibers, and the displaced signal is measured with a high-efficiency superconducting nanowire single-photon detector. We show the discrimination error rate is two times below that of a shot-noise-limited receiver with the same system detection efficiency.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9926 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1268
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Author Zhang, X.; Lita, A. E.; Smirnov, K.; Liu, H. L.; Zhu, D.; Verma, V. B.; Nam, S. W.; Schilling, A.
Title Strong suppression of the resistivity near the superconducting transition in narrow microbridges in external magnetic fields Type Journal Article
Year 2020 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume (up) 101 Issue 6 Pages 060508 (1 to 6)
Keywords MoSi, WSi films
Abstract We have investigated a series of superconducting bridges based on homogeneous amorphous WSi and MoSi films, with bridge widths w ranging from 2 to 1000μm and film thicknesses d∼4−6 and 100 nm. Upon decreasing the bridge widths below the respective Pearl lengths, we observe in all cases distinct changes in the characteristics of the resistive transitions to superconductivity. For each of the films, the resistivity curves R(B,T) separate at a well-defined and field-dependent temperature T∗(B) with decreasing the temperature, resulting in a dramatic suppression of the resistivity and a sharpening of the transitions with decreasing bridge width w. The associated excess conductivity in all the bridges scales as 1/w, which may suggest either the presence of a highly conducting region that is dominating the electric transport, or a change in the vortex dynamics in narrow enough bridges. We argue that this effect can only be observed in materials with sufficiently weak vortex pinning.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9950 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1800
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Author Sidorova, M.; Semenov, Alexej D.; Hübers, H.-W.; Ilin, K.; Siegel, M.; Charaev, I.; Moshkova, M.; Kaurova, N.; Goltsman, G. N.; Zhang, X.; Schilling, A.
Title Electron energy relaxation in disordered superconducting NbN films Type Journal Article
Year 2020 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume (up) 102 Issue 5 Pages 054501 (1 to 15)
Keywords NbN SSPD, SNSPD, HEB, bandwidth, relaxation time
Abstract We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qTl (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τe−ph∼Tn with the exponents n≈3.2–3.8. We found that in this temperature range τe−ph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9950 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1266
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Author Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G.
Title The electron-phonon relaxation time in thin superconducting titanium nitride films Type Journal Article
Year 2013 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume (up) 103 Issue 25 Pages 252602 (1 to 4)
Keywords disordered TiN films, electron-phonon relaxation time
Abstract We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.

The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159.
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Notes Approved no
Call Number RPLAB @ kovalyuk @ Serial 941
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