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Slysz, W.; Wegrzecki, M.; Papis, E.; Gol'tsman, G. N.; Verevkin, A.; Sobolewski, R. |
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A method of optimization of the NbN superconducting single-photon detector |
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Miscellaneous |
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2004 |
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INIS |
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36 |
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27 |
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1-2 |
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NbN SSPD, SNSPD |
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5-th International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION |
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Reference num. 36060124 |
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1485 |
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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state |
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1982 |
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JETP Lett. |
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JETP Lett. |
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36 |
Issue |
7 |
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296-299 |
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HEB |
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Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии |
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no |
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1717 |
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Slysz, W.; Wegrzecki, M.; Bar, J.; Grabiec, P.; Gol'tsman, G. N.; Verevkin, M.; Sobolewski, R. |
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Title |
NbN superconducting single-photon detectors coupled with a communication fiber |
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Miscellaneous |
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2004 |
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Abbreviated Journal |
INIS |
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37 |
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2 |
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1-2 |
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NbN SSPD, SNSPD |
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Stare Jablonki, Poland |
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8-th Electron Technology Conference ELTE |
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no |
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1486 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Submillimeter spectroscopy of semiconductors |
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1973 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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37 |
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2 |
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299-304 |
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semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons |
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The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. |
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no |
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1735 |
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Morozov, D. V.; Smirnov, K. V.; Smirnov, A. V.; Lyakhov, V. A.; Goltsman, G. N. |
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A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure |
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Journal Article |
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2005 |
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Semicond. |
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Semicond. |
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39 |
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9 |
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1082-1086 |
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2D electron gas, AlGaAs/GaAs heterostructures, mixers |
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Experimental results obtained by studying the main characteristics of a millimeter-submillimeter wave mixer based on the hot-electron effect in a two-dimensional electron gas in a AlGaAs/GaAs heterostructure with a phonon-scattering cooling mechanism for charge carriers are reported. The gain bandwidth of the mixer is 4 GHz, the internal conversion losses are 13 dB, and the optimum local-oscillator power is 0.5 μW (for a mixer area of 1 μm2). It is shown that a millimeter-submillimeter-wave receiver with a noise temperature of 1900 K can be developed on the basis of a AlGaAs/GaAs mixer. This mixer also appears to be promising for use in array receiver elements. |
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1063-7826 |
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1463 |
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