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| Author | Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. | ||||
| Title | Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation | Type | Journal Article | ||
| Year | 2013 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume  |
103 | Issue | 18 | Pages | 181121 (1 to 5) |
| Keywords | carbon nanotubes, CNT, THz radiation, SiO2 substrate | ||||
| Abstract | We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a. | ||||
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| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1171 | |||
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| Author | Ferrari, S.; Kahl, O.; Kovalyuk, V.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P. | ||||
| Title | Waveguide-integrated single- and multi-photon detection at telecom wavelengths using superconducting nanowires | Type | Journal Article | ||
| Year | 2015 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume |
106 | Issue | 15 | Pages | 151101 (1 to 5) |
| Keywords | SSPD, SNSPD | ||||
| Abstract | We investigate single- and multi-photon detection regimes of superconducting nanowire detectors embedded in silicon nitride nanophotonic circuits. At near-infrared wavelengths, simultaneous detection of up to three photons is observed for 120 nm wide nanowires biased far from the critical current, while narrow nanowires below 100 nm provide efficient single photon detection. A theoretical model is proposed to determine the different detection regimes and to calculate the corresponding internal quantum efficiency. The predicted saturation of the internal quantum efficiency in the single photon regime agrees well with plateau behavior observed at high bias currents. W. H. P. Pernice acknowledges support by the DFG Grant Nos. PE 1832/1-1 and PE 1832/1-2 and the Helmholtz society through Grant No. HIRG-0005. The Ph.D. education of O. Kahl is embedded in the Karlsruhe School of Optics and Photonics (KSOP). G. N. Goltsman acknowledges support by Russian Federation President Grant HШ-1918.2014.2 and Ministry of Education and Science of the Russian Federation Contract No.: RFMEFI58614X0007. A. Korneev acknowledges support by Statement Task No. 3.1846.2014/k. V. Kovalyuk acknowledges support by Statement Task No. 2327. We also acknowledge support by the Deutsche Forschungsgemeinschaft (DFG) and the State of Baden-Württemberg through the DFG-Center for Functional Nanostructures (CFN) within subproject A6.4. We thank S. Kühn and S. Diewald for the help with device fabrication as well as B. Voronov and A. Shishkin for help with NbN thin film deposition and A. Semenov for helpful discussion about the detection mechanism of nanowire SSPD's. The authors declare no competing financial interests. |
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| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1211 | |||
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| Author | Beck, M.; Klammer, M.; Lang, S.; Leiderer, P.; Kabanov, V. V.; Gol'tsman, G. N.; Demsar, J. | ||||
| Title | Energy-gap dynamics of superconducting NbN thin films studied by time-resolved terahertz spectroscopy | Type | Journal Article | ||
| Year | 2011 | Publication | Phys. Rev. Lett. | Abbreviated Journal | Phys. Rev. Lett. |
| Volume |
107 | Issue | 17 | Pages | 4 |
| Keywords | NbN thin film, energy gap dynamics | ||||
| Abstract | Using time-domain terahertz spectroscopy we performed direct studies of the photoinduced suppression and recovery of the superconducting gap in a conventional BCS superconductor NbN. Both processes are found to be strongly temperature and excitation density dependent. The analysis of the data with the established phenomenological Rothwarf-Taylor model enabled us to determine the bare quasiparticle recombination rate, the Cooper pair-breaking rate and the electron-phonon coupling constant, λ=1.1±0.1, which is in excellent agreement with theoretical estimates. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 641 | ||
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| Author | Maingault, L.; Tarkhov, M.; Florya, I.; Semenov, A.; Espiau de Lamaëstre, R.; Cavalier, P.; Gol’tsman, G.; Poizat, J.-P.; Villégier, J.-C. | ||||
| Title | Spectral dependency of superconducting single photon detectors | Type | Journal Article | ||
| Year | 2010 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
| Volume |
107 | Issue | 11 | Pages | 116103 (1 to 3) |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | We investigate the effect of varying both incoming optical wavelength and width of NbN nanowires on the superconducting single photon detectors (SSPD) detection efficiency. The SSPD are current biased close to critical value and temperature fixed at 4.2 K, far from transition. The experimental results are found to verify with a good accuracy predictions based on the “hot spot model,” whose size scales with the absorbed photon energy. With larger optical power inducing multiphoton detection regime, the same scaling law remains valid, up to the three-photon regime. We demonstrate the validity of applying a limited number of measurements and using such a simple model to reasonably predict any SSPD behavior among a collection of nanowire device widths at different photon wavelengths. These results set the basis for designing efficient single photon detectors operating in the infrared (2–5 μm range). This work was supported by European projects FP6 STREP “SINPHONIA” (Contract No. NMP4-CT-2005-16433) and IP “QAP” (Contract No. 15848). |
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| ISSN | 0021-8979 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1392 | |||
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| Author | Shcherbatenko, M.; Tretyakov, I.; Lobanov, Yu.; Maslennikov, S. N.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. | ||||
| Title | Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers | Type | Journal Article | ||
| Year | 2016 | Publication | Appl. Phys. Lett. | Abbreviated Journal | |
| Volume |
109 | Issue | 13 | Pages | 132602 |
| Keywords | HEB mixer, contacts | ||||
| Abstract | We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1107 | |||
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| Author | Smirnov, K. V.; Divochiy, A. V.; Vakhtomin, Y. B.; Sidorova, M. V.; Karpova, U. V.; Morozov, P. V.; Seleznev, V. A.; Zotova, A. N.; Vodolazov, D. Y. | ||||
| Title | Rise time of voltage pulses in NbN superconducting single photon detectors | Type | Journal Article | ||
| Year | 2016 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume |
109 | Issue | 5 | Pages | 052601 |
| Keywords | SSPD, SNSPD | ||||
| Abstract | We have found experimentally that the rise time of voltage pulse in NbN superconducting single photon detectors increases nonlinearly with increasing the length of the detector L. The effect is connected with dependence of resistance of the detector Rn, which appears after photon absorption, on its kinetic inductance Lk and, hence, on the length of the detector. This conclusion is confirmed by our calculations in the framework of two temperature model. D.Yu.V. acknowledges the support from the Russian Foundation for Basic Research (Project No. 15-42-02365). K.V.S. acknowledges the financial support from the Ministry of Education and Science of the Russian Federation (Contract No. 3.2655.2014/K). |
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1236 | |||
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| Author | Beck, M.; Rousseau, I.; Klammer, M.; Leiderer, P.; Mittendorff, M.; Winnerl, S.; Helm, M.; Gol'tsman, G.N.; Demsar, J. | ||||
| Title | Transient increase of the energy gap of superconducting NbN thin films excited by resonant narrow-band terahertz pulses | Type | Journal Article | ||
| Year | 2013 | Publication | Phys. Rev. Lett. | Abbreviated Journal | Phys. Rev. Lett. |
| Volume |
110 | Issue | 26 | Pages | 267003 (1 to 5) |
| Keywords | NbN thin films, energy gap | ||||
| Abstract | Observations of radiation-enhanced superconductivity have thus far been limited to a few type-I superconductors (Al, Sn) excited at frequencies between the inelastic scattering rate and the superconducting gap frequency 2Delta/h. Utilizing intense, narrow-band, picosecond, terahertz pulses, tuned to just below and above 2Delta/h of a BCS superconductor NbN, we demonstrate that the superconducting gap can be transiently increased also in a type-II dirty-limit superconductor. The effect is particularly pronounced at higher temperatures and is attributed to radiation induced nonthermal electron distribution persisting on a 100 ps time scale. | ||||
| Address | Department of Physics and Center for Applied Photonics, University of Konstanz, D-78457, Germany | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0031-9007 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:23848912 | Approved | no | ||
| Call Number | Serial | 1370 | |||
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| Author | Baeva, E. M.; Titova, N. A.; Kardakova, A. I.; Piatrusha, S. U.; Khrapai, V. S. | ||||
| Title | Universal bottleneck for thermal relaxation in disordered metallic films | Type | Journal Article | ||
| Year | 2020 | Publication | JETP Lett. | Abbreviated Journal | Jetp Lett. |
| Volume |
111 | Issue | 2 | Pages | 104-108 |
| Keywords | NbN disordered metallic films, thermal relaxation | ||||
| Abstract | We study the heat relaxation in current biased metallic films in the regime of strong electron–phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering, the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of bias voltage, in spite of the fact that all the dimensions of the film are large compared to the electron–phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron–phonon scattering rate. A preliminary experimental study of a 200-nm-thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors. | ||||
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| ISSN | 0021-3640 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1164 | |||
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| Author | Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. | ||||
| Title | Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors | Type | Journal Article | ||
| Year | 2018 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume |
112 | Issue | 14 | Pages | 141101 (1 to 5) |
| Keywords | graphene field effect transistors, FET | ||||
| Abstract | Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs. D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions. |
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1309 | |||
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| Author | Jukna, A.; Kitaygorsky, J.; Pan, D.; Cross, A.; Perlman, A.; Komissarov, I.; Sobolewski, R.; Okunev, O.; Smirnov, K.; Korneev, A.; Chulkova, G.; Milostnaya, I.; Voronov, B.; Gol'tsman, G. | ||||
| Title | Dynamics of hotspot formation in nanostructured superconducting stripes excited with single photons | Type | Journal Article | ||
| Year | 2008 | Publication | Acta Physica Polonica A | Abbreviated Journal | Acta Physica Polonica A |
| Volume |
113 | Issue | 3 | Pages | 955-958 |
| Keywords | SSPD, SNSPD | ||||
| Abstract | Dynamics of a resistive hotspot formation by near-infrared-wavelength single photons in nanowire-type superconducting NbN stripes was investigated. Numerical simulations of ultrafast thermalization of photon-excited nonequilibrium quasiparticles, their multiplication and out-diffusion from a site of the photon absorption demonstrate that 1.55 μm wavelength photons create in an ultrathin, two-dimensional superconducting film a resistive hotspot with the diameter which depends on the photon energy, and the nanowire temperature and biasing conditions. Our hotspot model indicates that under the subcritical current bias of the 2D stripe, the electric field penetrates the superconductor at the hotspot boundary, leading to suppression of the stripe superconducting properties and accelerated development of a voltage transient across the stripe. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1414 | |||
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