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Author Jiang, L.; Li, J.; Zhang, W.; Yao, Q. J.; Lin, Z. L.; Shi, S. C.; Vachtomin, Y. B.; Antipov, S. V.; Svechnikov, S. I.; Voronov, B. M.; Goltsman, G. N.
Title Characterization of NbN HEB mixers cooled by a close-cycled 4 Kelvin refrigerator Type Journal Article
Year 2005 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume (down) 15 Issue 2 Pages 511-513
Keywords NbN HEB mixers
Abstract It is quite beneficial to operate superconducting hot-electron-bolometer (HEB) mixers with a close-cycled 4 Kelvin refrigerator for real applications such as astronomy and atmospheric research. In this paper, a phononcooled NbN HEB mixer (quasioptical type) is thoroughly characterized under such a cooling circumstance. The effects of mechanical vibration, electrical interference, and temperature fluctuation of a two-stage Gifford-McMahon 4 Kelvin refrigerator upon the characteristics of the phononcooled NbN HEB mixer are investigated in particular. Detailed measurement results are presented.
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ISSN 1558-2515 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1469
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Author Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G.
Title Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer Type Journal Article
Year 2003 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume (down) 13 Issue 2 Pages 164-167
Keywords NbN HEB mixer
Abstract In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions.
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Notes Approved no
Call Number Serial 341
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Author Gol’tsman, G. N.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Zhang, J.; Verevkin, A.; Sobolewski, R.
Title Fabrication of nanostructured superconducting single-photon detectors Type Journal Article
Year 2003 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume (down) 13 Issue 2 Pages 192-195
Keywords NbN SSPD, SNSPD
Abstract Fabrication of NbN superconducting single-photon detectors, based on the hotspot effect is presented. The hotspot formation arises in an ultrathin and submicrometer-width superconductor stripe and, together with the supercurrent redistribution, leads to the resistive detector response upon absorption of a photon. The detector has a meander structure to maximally increase its active area and reach the highest detection efficiency. Main processing steps, leading to efficient devices, sensitive in 0.4-5 /spl mu/m wavelength range, are presented. The impact of various processing steps on the performance and operational parameters of our detectors is discussed.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1558-2515 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1515
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Author Kroug, M.; Cherednichenko, S.; Merkel, H.; Kollberg, E.; Voronov, B.; Gol'tsman, G.; Hübers, H. W.; Richter, H.
Title NbN hot electron bolometric mixers for terahertz receivers Type Journal Article
Year 2001 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume (down) 11 Issue 1 Pages 962-965
Keywords NbN HEB mixers
Abstract Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two.
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Area Expedition Conference
Notes Approved no
Call Number Serial 312
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Author Gol’tsman, G.; Okunev, O.; Chulkova, G.; Lipatov, A.; Dzardanov, A.; Smirnov, K.; Semenov, A.; Voronov, B.; Williams, C.; Sobolewski, R.
Title Fabrication and properties of an ultrafast NbN hot-electron single-photon detector Type Journal Article
Year 2001 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume (down) 11 Issue 1 Pages 574-577
Keywords NbN SSPD, SNSPD
Abstract A new type of ultra-high-speed single-photon counter for visible and near-infrared wavebands based on an ultrathin NbN hot-electron photodetector (HEP) has been developed. The detector consists of a very narrow superconducting stripe, biased close to its critical current. An incoming photon absorbed by the stripe produces a resistive hotspot and causes an increase in the film’s supercurrent density above the critical value, leading to temporary formation of a resistive barrier across the device and an easily measurable voltage pulse. Our NbN HEP is an ultrafast (estimated response time is 30 ps; registered time, due to apparatus limitations, is 150 ps), frequency unselective device with very large intrinsic gain and negligible dark counts. We have observed sequences of output pulses, interpreted as single-photon events for very weak laser beams with wavelengths ranging from 0.5 /spl mu/m to 2.1 /spl mu/m and the signal-to-noise ratio of about 30 dB.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1558-2515 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1547
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Author Kawamura, J.; Tong, C.-Y. E.; Blundell, R.; Papa, D. C.; Hunter, T. R.; Patt, F.; Gol’tsman, G.; Gershenzon, E.
Title Terahertz-frequency waveguide NbN hot-electron bolometer mixer Type Journal Article
Year 2001 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume (down) 11 Issue 1 Pages 952-954
Keywords NbN HEB mixers
Abstract We have developed a low-noise waveguide heterodyne receiver for operation near 1 THz using phonon-cooled NbN hot-electron bolometers. The mixer elements are submicron-sized microbridges of 4 nm-thick NbN film fabricated on a quartz substrate. Operating at a bath temperature of 4.2 K, the double-sideband receiver noise temperature is 760 K at 1.02 THz and 1100 K at 1.26 THz. The local oscillator is provided by solid-state sources, and power measured at the source is less than 1 /spl mu/W. The intermediate frequency bandwidth exceeds 2 GHz. The receiver was used to make the first ground-based heterodyne detection of a celestial spectroscopic line above 1 THz.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1558-2515 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1546
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Author Kawamura, J. H.; Tong, C.-Y.E.; Blundell, R.; Cosmo Papa, D.; Hunter, T. R.; Gol'tsman, G.; Cherednichenko, S.; Voronov, B.; Gershenzon, E.
Title An 800 GHz NbN phonon-cooled hot-electron bolometer mixer receiver Type Journal Article
Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume (down) 9 Issue 2 Pages 3753-3756
Keywords NbN HEB mixers
Abstract We describe a heterodyne receiver developed for astronomical applications to operate in the 350 /spl mu/m atmospheric window. The waveguide receiver employs a superconductive NbN phonon-cooled hot-electron bolometer mixer. The double sideband receiver noise temperature closely follows 1 kGHz/sup -1/ across 780-870 GHz, with the intermediate frequency centered at 1.4 GHz. The conversion loss is about 15 dB. The receiver was installed for operation at the University of Arizona/Max Planck Institute for Radio Astronomy Submillimeter Telescope facility. The instrument was successfully used to conduct test observations of a number of celestial sources in a number of astronomically important spectral lines.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 288
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Author Schwaab, G.W.; Sirmain, G.; Schubert, J.; Hubers, H.-W.; Gol'tsman, G.; Cherednichenko, S.; Verevkin, A.; Voronov, B.; Gershenzon, E.
Title Investigation of NbN phonon-cooled HEB mixers at 2.5 THz Type Journal Article
Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume (down) 9 Issue 2 Pages 4233-4236
Keywords NbN HEB mixers
Abstract The development of superconducting hot electron bolometric (HEB) mixers has been a big step forward in the direction of quantum noise limited mixer performance at THz frequencies. Such mixers are crucial for the upcoming generation of airborne and spaceborne THz heterodyne receivers. In this paper we report on new results on a phonon-cooled NbN HEB mixer using e-beam lithography. The superconducting film is 3 nm thick. The mixer is 0.2 μm long and 1.5 μm wide and it is integrated in a spiral antenna on a Si substrate. The device is quasi-optically coupled through a Si lens and a dielectric beam combiner to the radiation of an optically pumped FIR ring gas laser cavity. The performance of the mixer at different THz frequencies from 0.69 to 2.55 THz with an emphasis on 2.52 THz is demonstrated. At 2.52 THz minimum DSB noise temperatures of 4200 K have been achieved at an IF of 1.5 GHz and a bandwidth of 40 MHz with the mixer mounted in a cryostat and a 0.8 m long signal path in air.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 550
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Author Il'in, K. S.; Currie, M.; Lindgren, M.; Milostnaya, I. I.; Verevkin, A. A.; Gol'tsman, G. N.; Sobolewski, R.
Title Quantum efficiency and time-domain response of superconducting NbN hot-electron photodetectors Type Journal Article
Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume (down) 9 Issue 2 Pages 3338-3341
Keywords NbN SSPD, SNSPD
Abstract We report our studies on the response of ultrathin superconducting NbN hot-electron photodetectors. We have measured the photoresponse of few-nm-thick, micron-size structures, which consisted of single and multiple microbridges, to radiation from the continuous-wave semiconductor laser and the femtosecond Ti:sapphire laser with the wavelength of 790 nm and 400 nm, respectively. The maximum responsivity was observed near the film's superconducting transition with the device optimally current-biased in the resistive state. The responsivity of the detector, normalized to its illuminated area and the coupling factor, was 220 A/W(3/spl times/10/sup 4/ V/W), which corresponded to a quantum efficiency of 340. The responsivity was wavelength independent from the far infrared to the ultraviolet range, and was at least two orders of magnitude higher than comparable semiconductor optical detectors. The time constant of the photoresponse signal was 45 ps, when was measured at 2.15 K in the resistive (switched) state using a cryogenic electro-optical sampling technique with subpicosecond resolution. The obtained results agree very well with our calculations performed using a two-temperature model of the electron heating in thin superconducting films.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1566
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Author Semenov, A. D.; Gol'tsman, G. N.
Title Non-thermal response of a diffusion-cooled hot-electron bolometer Type Journal Article
Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume (down) 9 Issue 2 Pages 4491-4494
Keywords HEB mixers, non-thermal
Abstract We present an analysis of a diffusion-cooled hot-electron bolometer in the limiting case of a weak thermalization of non-equilibrium quasiparticles. We propose a new model relying on the non-thermal suppression of the superconducting energy gap by excess quasiparticles. Using material parameters typical for Al, we evaluate performance of the bolometer in the heterodyne regime at terahertz frequencies. Estimates show that the mixer may have quantum limited noise temperature and a few tens of GHz bandwidth, while the required local oscillator power is in the /spl mu/W range due to in-effective suppression of the energy gap by quasiparticles with high energies.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1567
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Author Gerecht, E.; Musante, C. F.; Jian, H.; Yngvesson, K. S.; Dickinson, J.; Waldman, J.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.
Title New results for NbN phonon-cooled hot electron bolometric mixers above 1 THz Type Journal Article
Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume (down) 9 Issue 2 Pages 4217-4220
Keywords NbN HEB mixers
Abstract NbN Hot Electron Bolometric (HEB) mixers have produced promising results in terms of DSB receiver noise temperature (2800 K at 1.56 THz). The LO source for these mixers is a gas laser pumped by a CO/sub 2/ laser and the device is quasi-optically coupled through an extended hemispherical lens and a self-complementary log-periodic toothed antenna. NbN HEBs do not require submicron dimensions, can be operated comfortably at 4.2 K or higher, and require LO power of about 100-500 nW. IF noise bandwidths of 5 GHz or greater have been demonstrated. The DC bias point is also not affected by thermal radiation at 300 K. Receiver noise temperatures below 1 THz are typically 450-600 K and are expected to gradually approach these levels above 1 THz as well. NbN HEB mixers thus are rapidly approaching the type of performance required of a rugged practical receiver for astronomy and remote sensing in the THz region.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1568
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Author Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol'tsman, G.; Gershenzon, E.
Title Heterodyne measurements of a NbN superconducting hot electron mixer at terahertz frequencies Type Journal Article
Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume (down) 9 Issue 2 Pages 3757-3760
Keywords NbN HEB mixers
Abstract The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1569
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Author Gousev, Y. P.; Semenov, A. D.; Goghidze, I. G.; Pechen, E. V.; Varlashkin, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Renk, K. F.
Title Current dependent noise in a YBa2Cu3O7-δ hot-electron bolometer Type Journal Article
Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume (down) 7 Issue 2 Pages 3556-3559
Keywords YBCO HTS HEB mixers
Abstract We investigated the output noise of a YBa2Cu3O7-δ (YBCO) superconducting hot-electron bolometer (HEB) in a large frequency range (10 kHz to 8 GHz); the bolometer either consisted of a structured 50 nm thick YBCO film on LaAlO/sub 3/ or a 30 nm thick film on a MgO substrate. We found that flicker noise dominated at low frequencies (below 1 MHz), while at higher frequencies Johnson noise and a current dependent noise were the main noise sources.
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Language Summary Language Original Title
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ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1592
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Author Semenov, A. D.; Gousev, Y. P.; Renk, K. F.; Voronov, B. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Schwaab, G.W.; Feinaugle, R.
Title Noise characteristics of a NbN hot-electron mixer at 2.5 THz Type Journal Article
Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume (down) 7 Issue 2 Pages 3572-3575
Keywords NbN HEB mixers
Abstract The noise temperature of a NbN phonon cooled hot-electron mixer has been measured at a frequency of 2.5 THz for various operating conditions. We obtained for optimal operation a double sideband mixer noise temperature of /spl ap/14000 K and a system conversion loss of /spl ap/23 dB at intermediate frequencies up to 1 GHz. The dependences of the mixer noise temperature on the bias voltage, local oscillator power, and intermediate frequency were consistent with the phenomenological description based on the effective temperature approximation.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1594
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Author Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.
Title 2.5 THz NbN hot electron mixer with integrated tapered slot antenna Type Journal Article
Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume (down) 7 Issue 2 Pages 3548-3551
Keywords NbN HEB mixers
Abstract A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1595
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