Yngvesson, K. S., Gerecht, E., Musante, C. F., Zhuang, Y., Ji, M., Goyette, T. M., et al. (1999). Low-noise HEB heterodyne receivers and focal plane arrays for the THz regime using NbN. In R. J. Hwu, & K. Wu (Eds.), Proc. SPIE (Vol. 3795, pp. 357–368). SPIE.
Abstract: We have developed prototype HEB receivers using thin film superconducting NbN devices deposited on silicon substrates. The devices are quasi-optically coupled through a silicon lens and a self-complementary log-specific toothed antenna. We measured DSB receiver noise temperatures of 500 K (13 X hf/2k) at 1.56 THz and 1,100 K (20 X hf/2k) at 2.24 THz. Noise temperatures are expected to fall further as devices and quasi-optical coupling methods are being optimized. The measured 3 dB IF conversion gain bandwidth for one device was 3 GHz, and it is estimated that the bandwidth over which the receiver noise temperature is within 3 dB of its minimum value is 6.5 GHz which is sufficient for a number of practical applications. We will discuss our latest results and give a detailed description of our prototype setup and experiments. We will also discuss our plans for developing focal plane arrays with tens of Hot Electron Bolometric mixer elements on a single silicon substrate which will make real time imaging systems in the THz region feasible.
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Zhizhon, Y., & Majedi, H. A. (2009). Optoelectronic mixing in the NbN superconducting nanowire single photon detectors. In Proc. SPIE (Vol. 3786, 9).
Abstract: In this paper, we present our experimental results on the electrically pumped optoelectronic mixing effect exhibited in a niobium nitride (NbN) superconducting nanowire. The experimental setup in order to test the mixer has been reported in detail. This superconductive nanowire optoelectronic mixer demonstrates photodetection and mixing in an integrated manner. We have explored both effects under a great variety of external conditions, such as temperature and bias current, in order to seek potential ways toward quantum optoelectronic detection and mixing by such nanowire device.
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Schwaab, G. W., Auen, K., Bruendermann, E., Feinaeugle, R., Gol’tsman, G. N., Huebers, H. - W., et al. (1998). 2- to 6-THz heterodyne receiver array for the Stratospheric Observatory for Infrared Astronomy (SOFIA). In T. G. Phillips (Ed.), Proc. SPIE (Vol. 3357, pp. 85–96). SPIE.
Abstract: The Institute of Space Sensor Technology of the German Aerospace Center (DLR) is developing a heterodyne array receiver for the frequency range 2 to 6 THz for the Stratospheric Observatory for Infrared Astronomy (SOFIA). Key science issues in that frequency range are the observation of lines of atoms [e.g. (OI)], ions [e.g. (CII), (NII)], and molecules (e.g. OH, HD, CO) with high spectral resolution to study the dynamics and evolution of galactic and extragalactic objects. Long term goal is the development of an integrated array heterodyne receiver with superconducting hot electron bolometric (HEB) mixers and p-type Ge or Si lasers as local oscillators. The first generation receiver will be composed of HEB mixers in a 2 pixel 2 polarization array which will be pumped by a gas laser local oscillator. Improved Schottky diode mixers are the backup solution for the HEBs. The state of the art of HEB mixer and p-type Ge laser technology are described as well as possible improvements in the ’conventional’ optically pumped far-infrared laser and Schottky diode mixer technology. Finally, the frequency coverage of the first generation heterodyne receiver for some important astronomical transitions is discussed. The expected sensitivity is compared to line fluxes measured by the ISO satellite.
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Boreman, G. D. (1997). Infrared microantennas. SPIE, 3110, 882–885.
Abstract: We present results of mesurments of the polarization response of asymetric spiral antennas coupled Ni-NiO-Ni diodes, over the wavelength range 10.2 to 10.7 μm. The feed structure of the antenna imposes an elliptical polarization singature that is different from the circular polarization expected from a symmetric spiral. We develop a lossy-transmission-line model yielding the measured polarization response. A combination of a balanced and an unbalanced mode is required. Reflected current waves from the arm ends are significant.
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Karasik, B. S., Zorin, M. A., Milostnaya, I. I., Elantev, A. I., Gol’tsman, G. N., & Gershenzon, E. M. (1994). Evidence of subnanosecond transition stage in S-N current switching of YBaCuO films. In R. A. Buhrman, J. T. Clarke, K. Daly, R. H. Koch, J. A. Luine, & R. W. Simon (Eds.), Proc. SPIE (Vol. 2160, pp. 74–82). SPIE.
Abstract: We report on a study of S-N and N-S current switching in high quality YBaCuO films deposited onto ZrO2 and NdGaO3 substrates. The films 60-120 nm thick prepared by laser ablation were structured into single strips and were provided with gold contacts. We monitored the time dependence of the resistance upon application of the voltage step on the film. Experiment performed within certain ranges of voltage amplitudes and temperatures showed the occurrence of the fast stage both in S-N (shorter than 300 ps) and N-S transition. We discuss the mechanism of switching taking into account the hot electron phenomena in YBaCuO. The contributions of various thermal processes in the subsequent stage of the resistance dynamic are also discussed. The basic limiting characteristics (average dissipated power, minimum work done for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated.
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