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Author Semenov, A.; Richter, H.; Hübers, H.-W.; Smirnov, K.; Voronov, B.; Gol'tsman, G. url  isbn
openurl 
  Title Development of terahertz superconducting hot-electron bolometer mixers Type Conference Article
  Year 2003 Publication Proc. 6th European Conf. Appl. Supercond. Abbreviated Journal Proc. 6th European Conf. Appl. Supercond.  
  Volume (down) 181 Issue Pages 2960-2965  
  Keywords NbN HEB mixers  
  Abstract We present recent results of the development of phonon cooled hot-electron bolometric (HEB) mixers for airborne and balloon borne terahertz heterodyne receivers. Three iomportant issues have been addresses: the quality of NbN films the HEB mixers were made from, the spectral properties of the HEB mixers and the local oscillator power required for optical operation. Studies with an atomic force microscope indicate, that the performance of the HEB mixer might have been effected by the microstructure of the NbN film. Antenna gain and noise temperature were investigated at terahertz frequencies for a HEB embedded in either log-spiral or twin-slot feed antenna. Comparison suggests that at frequencies above 3 THz the spiral feed provides better overall performance. At 1.6 THz, a power of 2.5 µW was required from the local oscillator for optimal operation of the HEB mixer.  
  Address Sorrento, Italy  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN 0750309814, 978-0750309813 Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1505  
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Author Schubert, J.; Semenov, A.; Hübers, H.-W.; Gol'tsman, G.; Schwaab, G.; Voronov, B.; Gershenzon, E. url  openurl
  Title Broad-band terahertz NbN hot-electron bolometric mixer Type Conference Article
  Year 1999 Publication Inst. Phys. Conf. Abbreviated Journal Inst. Phys. Conf.  
  Volume (down) 167 Issue Pages 663-666  
  Keywords NbN HEB mixers  
  Abstract  
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  Area Expedition Conference 4th Europ. Conf. on Appl. Superconductivity, Barcelona, Spain, 14-17 September 1999  
  Notes Approved no  
  Call Number Serial 1578  
Permanent link to this record
 
 
Author Cherednichenko, S.; Drakinskiy, V. url  doi
openurl 
  Title Low noise hot-electron bolometer mixers for terahertz frequencies Type Journal Article
  Year 2008 Publication J. Low Temp. Phys. Abbreviated Journal J. Low Temp. Phys.  
  Volume (down) 151 Issue 1-2 Pages 575-579  
  Keywords HEB, mixer, gain bandwidth, MgB2  
  Abstract Hot-electron bolometer (HEB) mixers are used in many low noise heterodyne radio astronomical receivers. Their noise temperature is at the level of 10–15 times the quantum limit. However, their gain bandwidth is a serious limiting factor. Here we review the state of the art of the HEB mixers gain bandwidth for different materials and substrates. We compare the gain bandwidth of HEB mixers made on bulk substrates and thin membranes. Finally, results for MgB2 thin films for broadband HEB mixers are discussed.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-2291 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ lobanovyury @ Serial 553  
Permanent link to this record
 
 
Author Anfertev, V.; Vaks, V.; Revin, L.; Pentin, I.; Tretyakov, I.; Goltsman, G.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. url  doi
openurl 
  Title High resolution THz gas spectrometer based on semiconductor and superconductor devices Type Conference Article
  Year 2017 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume (down) 132 Issue Pages 02001 (1 to 2)  
  Keywords NbN HEB mixers, detectors, THz spectroscopy  
  Abstract The high resolution THz gas spectrometer consists of a synthesizer based on Gunn generator with a semiconductor superlattice frequency multiplier as a radiation source, and an NbN hot electron bolometer in a direct detection mode as a THz radiation receiver was presented. The possibility of application of a quantum cascade laser as a local oscillator for a heterodyne receiver which is based on an NbN hot electron bolometer mixer is shown. The ways for further developing of the THz spectroscopy were outlined.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1328  
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Author Rasulova, G. K.; Pentin, I. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Khabibullin, R. A.; Klimov, E. A.; Klochkov, A. N.; Goltsman, G. N. url  doi
openurl 
  Title Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime Type Journal Article
  Year 2020 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.  
  Volume (down) 128 Issue 22 Pages 224303 (1 to 11)  
  Keywords HEB, resonant tunneling diode, RTD  
  Abstract The study of the bolometer response to terahertz (THz) radiation from a double-barrier resonant tunneling diode (RTD) biased into the negative differential conductivity region of the I–V characteristic revealed that the RTD emits two pulses in a period of intrinsic self-oscillations of current. The bolometer pulse repetition rate is a multiple of the fundamental frequency of the intrinsic self-oscillations of current. The bolometer pulses are detected at two critical points with a distance between them being half or one-third of a period of the current self-oscillations. An analysis of the current self-oscillations and the bolometer response has shown that the THz photon emission is excited when the tunneling electrons are trapped in (the first pulse) and then released from (the second pulse) miniband states.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1262  
Permanent link to this record
 
 
Author Bardeen, J; Mattis, D. C. openurl 
  Title Theory of the anomalous skin effect in normal and superconducting metals Type Journal Article
  Year 1958 Publication Phys. Rev. Abbreviated Journal Phys. Rev.  
  Volume (down) 111 Issue 2 Pages 412-417  
  Keywords local dirty limit, complex conductivity, HEB  
  Abstract Chambers' expression for the current density in a normal metal in which the electric field varies over a mean free path is derived from a quantum approach in which use is made of the density matrix in the presence of scattering centers but in the absence of the field. An approximate expression used for the latter is shown to reduce to one derived by Kohn and Luttinger for the case of weak scattering. A general space-and time-varying electromagnetic interaction is treated by first-order perturbation theory. The method is applied to superconductors, and a general expression derived for the kernel of the Pippard integral for fields of arbitrary frequency. The expressions derived can also be used to discuss absorption of electromagnetic radiation in thin superconducting films.  
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  Notes Approved no  
  Call Number Serial 937  
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Author Shcherbatenko, M.; Tretyakov, I.; Lobanov, Yu.; Maslennikov, S. N.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. doi  openurl
  Title Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers Type Journal Article
  Year 2016 Publication Appl. Phys. Lett. Abbreviated Journal  
  Volume (down) 109 Issue 13 Pages 132602  
  Keywords HEB mixer, contacts  
  Abstract We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device.  
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  Notes Approved no  
  Call Number Serial 1107  
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Author Miao, W.; Zhang, W.; Zhong, J. Q.; Shi, S. C.; Delorme, Y.; Lefevre, R.; Feret, A; Vacelet, T url  doi
openurl 
  Title Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges Type Journal Article
  Year 2014 Publication Appl. Phys. Lett. Abbreviated Journal <ef><bf><bc>Appl. Phys. Lett.  
  Volume (down) 104 Issue Pages 052605(1-4)  
  Keywords NbN HEB mixers, local oscillator power, RF nonuniform absorption  
  Abstract We interpret the experimental observation of a frequency-dependence of superconducting hot electron bolometer (HEB) mixers by taking into account the non-uniform absorption of the terahertz radiation on the superconducting HEB microbridge. The radiation absorption is assumed to be proportional to the local surface resistance of the HEB microbridge, which is computed using the Mattis-Bardeen theory. With this assumption the dc and mixing characteristics of a superconducting niobium-nitride (NbN) HEB device have been modeled at frequencies below and above the equilibrium gap frequency of the NbN film.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 935  
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Author Sidorova, M.; Semenov, Alexej D.; Hübers, H.-W.; Ilin, K.; Siegel, M.; Charaev, I.; Moshkova, M.; Kaurova, N.; Goltsman, G. N.; Zhang, X.; Schilling, A. url  doi
openurl 
  Title Electron energy relaxation in disordered superconducting NbN films Type Journal Article
  Year 2020 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume (down) 102 Issue 5 Pages 054501 (1 to 15)  
  Keywords NbN SSPD, SNSPD, HEB, bandwidth, relaxation time  
  Abstract We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qTl (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τe−ph∼Tn with the exponents n≈3.2–3.8. We found that in this temperature range τe−ph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material.  
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  Series Volume Series Issue Edition  
  ISSN 2469-9950 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1266  
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Author Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Krieg, J.-M.; Voronov, B.; Gol'tsman, G.; Desmaris, V. url  doi
openurl 
  Title Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes Type Journal Article
  Year 2007 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.  
  Volume (down) 101 Issue 12 Pages 124508 (1 to 6)  
  Keywords HEB, mixer, membrane  
  Abstract The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 560  
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