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Author Lusche, Robert; Semenov, Alexey; Huebers, Heinz-Willhelm; Ilin, Konstantin; Siegel, Michael; Korneeva, Yuliya; Trifonov, Andrey; Korneev, Alexander; Goltsman, Gregory url  openurl
  Title Effect of the wire geometry and an externally applied magnetic field on the detection efficiency of superconducting nanowire single-photon detectors Type Abstract
  Year 2013 Publication INIS Abbreviated Journal INIS  
  Volume (down) 46 Issue 8 Pages 1-3  
  Keywords TaN, NbN SSPD, SNSPD  
  Abstract The interest in single-photon detectors in the near-infrared wavelength regime for applications, e.g. in quantum cryptography has immensely increased in the last years. Superconducting nanowire single-photon detectors (SNSPD) already show quite reasonable detection efficiencies in the NIR which can even be further improved. Novel theoretical approaches including vortex-assisted photon counting state that the detection efficiency in the long wavelength region can be enhanced by the detector geometry and an applied magnetic field. We present spectral measurements in the wavelength range from 350-2500 nm of the detection efficiency of meander-type TaN and NbN SNSPD with varying nanowire line width from 80 to 250 nm. Due to the used experimental setup we can accurately normalize the measured spectra and are able to extract the intrinsic detection efficiency (IDE) of our detectors. The results clearly indicate an improvement of the IDE depending on the wire width according to the theoretic models. Furthermore we experimentally found that the smallest detectable photon-flux can be increased by applying a small magnetic field to the detectors.  
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  Notes Approved no  
  Call Number Serial 1374  
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Author Hübers, H.-W.; Schubert, J.; Krabbe, A.; Birk, M.; Wagner, G.; Semenov, A.; Gol’tsman, G.; Voronov, B.; Gershenzon, E. url  doi
openurl 
  Title Parylene anti-reflection coating of a quasi-optical hot-electron-bolometric mixer at terahertz frequencies Type Journal Article
  Year 2001 Publication Infrared Physics & Technology Abbreviated Journal Infrared Physics & Technology  
  Volume (down) 42 Issue 1 Pages 41-47  
  Keywords NbN HEB mixers, anti-reflection coating  
  Abstract Parylene C was investigated as anti-reflection coating for silicon at terahertz frequencies. Measurements with a Fourier-transform spectrometer show that the transmittance of pure silicon can be improved by about 30% when applying a layer of Parylene C with a quarter wavelength optical thickness. The 10% bandwidth of this coating extends from 1.5 to 3 THz for a center frequency of 2.3–2.5 THz, where the transmittance is constant. Heterodyne measurements demonstrate that the noise temperature of a hot-electron-bolometric mixer can be reduced significantly by coating the silicon lens of the hybrid antenna with a quarter wavelength Parylene C layer. Compared to the same mixer with an uncoated lens the improvement is about 30% at a frequency of 2.5 THz.  
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  ISSN 1350-4495 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1548  
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Author Hong, Kyushik; Marsh, P. F.; Geok-Ing Ng; Pavlidis, D.; Hong, Chang-Hee openurl 
  Title Optimization of MOVPE grown InxAl1-xAs/In0.53Ga0.47As planar heteroepitaxial Schottky diodes for terahertz applications Type Journal Article
  Year 1994 Publication IEEE Trans. Electron Devices Abbreviated Journal  
  Volume (down) 41 Issue 9 Pages 1489-1497  
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  Notes Approved no  
  Call Number Serial 253  
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Author Kinch, M. A.; Wan, C.-F., Beck, J. D. openurl 
  Title 1/f noise in HgCdTe photodiodes Type Journal Article
  Year 2005 Publication J. Electron. Mater. Abbreviated Journal  
  Volume (down) 34 Issue 6 Pages 928-932  
  Keywords HgCdTe  
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  Notes Approved no  
  Call Number Serial 468  
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Author Jang, Young Rae; Yoo, Keon-Ho; Park, Seung Min openurl 
  Title Rapid thermal annealing of ZnO thin films grown at room temperature Type Journal Article
  Year 2010 Publication J. Vac. Sci. Technol. A Abbreviated Journal  
  Volume (down) 28 Issue 2 Pages 4  
  Keywords Annealing  
  Abstract The authors successfully obtained high quality ZnO thin films by growing them at room temperature (RT) and postannealing by rapid thermal annealing (RTA). The thin films were grown by pulsed laser deposition on Si (100) substrates at RT, and RTA was performed under various temperatures and ambient conditions. Based on the UV emission to visible emission ratio in RT photoluminescence (PL) spectra, the optimum film was obtained at annealing temperature ~700 °C in an ambient of Ar, N2, or O2 at 0.1 Torr, while the optimum annealing temperature was above 1100 °C in the air ambient at atmospheric pressure. The morphology and structure of the films in different RTA conditions were investigated by using field emission scanning electron microscopy and grazing incidence x-ray diffraction, and were discussed in conjunction with the PL data.  
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  Notes Annealing Approved no  
  Call Number RPLAB @ gujma @ Serial 692  
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