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Author Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L.
Title Energy spectrum of acceptors in germanium and its response to a magnetic field Type Journal Article
Year 1977 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume (down) 45 Issue 4 Pages 769-776
Keywords p-Ge, photoconductivity, energy spectrum, magnetic field
Abstract We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression.
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Notes Approved no
Call Number Serial 1727
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.
Title Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field Type Journal Article
Year 1977 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume (down) 45 Issue 3 Pages 555-565
Keywords Ge, GaAs, magnetic field, donors, energy spectrum
Abstract The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations.
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Notes Approved no
Call Number Serial 1728
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
Title Investigation of free excitons in Ge and their condensation at submillimeter wavelengths Type Journal Article
Year 1976 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume (down) 43 Issue 1 Pages 116-122
Keywords Ge, free excitons
Abstract Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system.
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Notes Approved no
Call Number Serial 1731
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Author Hübers, H.-W.; Schubert, J.; Krabbe, A.; Birk, M.; Wagner, G.; Semenov, A.; Gol’tsman, G.; Voronov, B.; Gershenzon, E.
Title Parylene anti-reflection coating of a quasi-optical hot-electron-bolometric mixer at terahertz frequencies Type Journal Article
Year 2001 Publication Infrared Physics & Technology Abbreviated Journal Infrared Physics & Technology
Volume (down) 42 Issue 1 Pages 41-47
Keywords NbN HEB mixers, anti-reflection coating
Abstract Parylene C was investigated as anti-reflection coating for silicon at terahertz frequencies. Measurements with a Fourier-transform spectrometer show that the transmittance of pure silicon can be improved by about 30% when applying a layer of Parylene C with a quarter wavelength optical thickness. The 10% bandwidth of this coating extends from 1.5 to 3 THz for a center frequency of 2.3–2.5 THz, where the transmittance is constant. Heterodyne measurements demonstrate that the noise temperature of a hot-electron-bolometric mixer can be reduced significantly by coating the silicon lens of the hybrid antenna with a quarter wavelength Parylene C layer. Compared to the same mixer with an uncoated lens the improvement is about 30% at a frequency of 2.5 THz.
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ISSN 1350-4495 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1548
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Author Gershenzon, E.; Goltsman, G.; Elantev, A.; Kagane, M.
Title Energy-spectrum of small donors and acceptors in germanium and effect of magnetic-field on it Type Conference Article
Year 1978 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
Volume (down) 42 Issue 6 Pages 1142-1148
Keywords energy spectrum, Ge, magnetic field
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Notes Approved no
Call Number Serial 1722
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Author Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N.
Title Population of excited-states of small admixtures in germanium Type Conference Article
Year 1978 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
Volume (down) 42 Issue 6 Pages 1154-1159
Keywords Ge, excited states, admixtures
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Publisher Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia Place of Publication Editor
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Notes Approved no
Call Number Serial 1723
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Author Blagosklonskaya, L. E.; Gershenzon, E. M.; Goltsman, G. N.; Elantev, A. I.
Title Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors Type Conference Article
Year 1978 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
Volume (down) 42 Issue 6 Pages 1231-1234
Keywords spectrum, semiconductors, admixtures, strong magnetic-field
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Publisher Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia Place of Publication Editor
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Notes Approved no
Call Number blagosklonskaya1978effect Serial 1724
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Author Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M.
Title On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data Type Journal Article
Year 1996 Publication J. of Communications Technology and Electronics Abbreviated Journal J. of Communications Technology and Electronics
Volume (down) 41 Issue 5 Pages 408-414
Keywords submillimeter waves, transmission
Abstract A method for the reconstruction of microstructural properties of an oil-bearing rock from the spectral dependence of the transmission factor of submillimeter waves is proposed.
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ISSN 1064-2269 ISBN Medium
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Notes Радиотехника и электроника 41, no. 4 (1996): 441-447 Approved no
Call Number Serial 1611
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Author Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G.
Title Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons Type Journal Article
Year 1975 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume (down) 40 Issue 2 Pages 311-315
Keywords Ge, cyclotron resonance
Abstract Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons.
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Notes Approved no
Call Number Serial 1768
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
Title Submillimeter spectroscopy of semiconductors Type Journal Article
Year 1973 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume (down) 37 Issue 2 Pages 299-304
Keywords semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons
Abstract The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented.
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Notes Approved no
Call Number Serial 1735
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