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Author Bell, M.; Kaurova, N.; Divochiy, A.; Gol'tsman, G.; Bird, J.; Sergeev, A.; Verevkin, A.
Title On the nature of resistive transition in disordered superconducting nanowires Type Journal Article
Year 2007 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume (up) 17 Issue 2 Pages 267-270
Keywords SSPD, SNSPD
Abstract Hot-electron single-photon counters based on long superconducting nanowires are starting to become popular in optical and infrared technologies due to their ultimately high sensitivity and very high response speed. We investigate intrinsic fluctuations in long NbN nanowires in the temperature range of 4.2 K-20 K, i.e. above and below the superconducting transition. These fluctuations are responsible for fluctuation resistivity and also determine the noise in practical devices. Measurements of the fluctuation resistivity were performed at low current densities and also in external magnetic fields up to 5 T. Above the BCS critical temperature T co the resistivity is well described by the Aslamazov-Larkin (AL) theory for two-dimensional samples. Below T co the measured resistivity is in excellent agreement with the Langer-Ambegaokar-McCumber-Halperin (LAMH) theory developed for one-dimensional superconductors. Despite that our nanowires of 100 nm width are two-dimensional with respect to the coherence length, our analysis shows that at relatively low current densities the one-dimensional LAMH mechanism based on thermally induced phase slip centers dominates over the two-dimensional mechanism related to unbinding of vortex-antivortex pairs below the Berezinskii-Kosterlitz-Thouless transition.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1247
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Author Dauler, E. A.; Robinson, B. S.; Kerman, A. J.; Yang, J. K. W.; Rosfjord, E. K. M.; Anant, V.; Voronov, B.; Gol'tsman, G.; Berggren, K. K.
Title Multi-element superconducting nanowire single-photon detector Type Journal Article
Year 2007 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume (up) 17 Issue 2 Pages 279-284
Keywords SSPD, SNSPD
Abstract A multi-element superconducting nanowire single photon detector (MESNSPD) is presented that consists of multiple independently-biased superconducting nanowire single photon detector (SNSPD) elements that form a continuous active area. A two-element SNSPD has been fabricated and tested, showing no measurable crosstalk between the elements, sub-50-ps relative timing jitter, and four times the maximum counting rate of a single SNSPD with the same active area. The MESNSPD can have a larger active area and higher speed than a single-element SNSPD and the input optics can be designed so that the detector provides spatial, spectral or photon number resolution.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1428
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Author Somani, S.; Kasapi, S.; Wilsher, K.; Lo, W.; Sobolewski, R.; Gol’tsman, G.
Title New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect Type Journal Article
Year 2001 Publication J. Vac. Sci. Technol. B Abbreviated Journal J. Vac. Sci. Technol. B
Volume (up) 19 Issue 6 Pages 2766-2769
Keywords NbN SSPD, SNSPD
Abstract A novel superconducting single-photon detector (SSPD), intrinsically capable of high quantum efficiency (up to 20%) over a wide spectral range (ultraviolet to infrared), with low dark counts (<1 cps), and fast (<40 ps) timing resolution, is described. This SSPD has been used to perform timing measurements on complementary metal–oxide–semiconductor integrated circuits (ICs) by detecting the infrared light emission from switching transistors. Measurements performed from the backside of a 0.13 μm geometry flip–chip IC are presented. Other potential applications for this detector are in telecommunications, quantum cryptography, biofluorescence, and chemical kinetics.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0734211X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1542
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Author Semenov, A.; Engel, A.; Il'in, K.; Gol'tsman, G.; Siegel, M.; Hübers, H.-W.
Title Ultimate performance of a superconducting quantum detector Type Journal Article
Year 2003 Publication Eur. Phys. J. Appl. Phys. Abbreviated Journal Eur. Phys. J. Appl. Phys.
Volume (up) 21 Issue 3 Pages 171-178
Keywords NbN SSPD, SNSPD
Abstract We analyze the ultimate performance of a superconducting quantum detector in order to meet requirements for applications in near-infrared astronomy and X-ray spectroscopy. The detector exploits a combined detection mechanism, in which avalanche quasiparticle multiplication and the supercurrent jointly produce a voltage response to a single absorbed photon via successive formation of a photon-induced and a current-induced normal hotspot in a narrow superconducting strip. The response time of the detector should increase with the photon energy providing energy resolution. Depending on the superconducting material and operation conditions, the cut-off wavelength for the single-photon detection regime varies from infrared waves to visible light. We simulated the performance of the background-limited infrared direct detector and X-ray photon counter utilizing the above mechanism. Low dark count rate and intrinsic low-frequency cut-off allow for realizing a background limited noise equivalent power of 10−20 W Hz−1/2 for a far-infrared direct detector exposed to 4-K background radiation. At low temperatures, the intrinsic response time of the counter is rather determined by diffusion of nonequilibrium electrons than by the rate of energy transfer to phonons. Therefore, thermal fluctuations do not hamper energy resolution of the X-ray photon counter that should be better than 10−3 for 6-keV photons. Comparison of new data obtained with a Nb based detector and previously reported results on NbN quantum detectors support our estimates of ultimate detector performance.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1286-0042 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 534
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Author Kovalyuk, V.; Hartmann, W.; Kahl, O.; Kaurova, N.; Korneev, A.; Goltsman, G.; Pernice, W. H. P.
Title Absorption engineering of NbN nanowires deposited on silicon nitride nanophotonic circuits Type Journal Article
Year 2013 Publication Opt. Express Abbreviated Journal Opt. Express
Volume (up) 21 Issue 19 Pages 22683-22692
Keywords SSPD, SNSPD, NbN nanoeires, Si3N4 waveguides
Abstract We investigate the absorption properties of U-shaped niobium nitride (NbN) nanowires atop nanophotonic circuits. Nanowires as narrow as 20nm are realized in direct contact with Si3N4 waveguides and their absorption properties are extracted through balanced measurements. We perform a full characterization of the absorption coefficient in dependence of length, width and separation of the fabricated nanowires, as well as for waveguides with different cross-section and etch depth. Our results show excellent agreement with finite-element analysis simulations for all considered parameters. The experimental data thus allows for optimizing absorption properties of emerging single-photon detectors co-integrated with telecom wavelength optical circuits.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1094-4087 ISBN Medium
Area Expedition Conference
Notes PMID:24104155 Approved no
Call Number Serial 1213
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