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Kawamura, J., Tong, C. - Y. E., Blundell, R., Papa, D. C., Hunter, T. R., Patt, F., et al. (2001). Terahertz-frequency waveguide NbN hot-electron bolometer mixer. IEEE Trans. Appl. Supercond., 11(1), 952–954.
Abstract: We have developed a low-noise waveguide heterodyne receiver for operation near 1 THz using phonon-cooled NbN hot-electron bolometers. The mixer elements are submicron-sized microbridges of 4 nm-thick NbN film fabricated on a quartz substrate. Operating at a bath temperature of 4.2 K, the double-sideband receiver noise temperature is 760 K at 1.02 THz and 1100 K at 1.26 THz. The local oscillator is provided by solid-state sources, and power measured at the source is less than 1 /spl mu/W. The intermediate frequency bandwidth exceeds 2 GHz. The receiver was used to make the first ground-based heterodyne detection of a celestial spectroscopic line above 1 THz.
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Blagosklonskaya, L. E., Gershenzon, E. M., Gol’tsman, G. N., & Elant’ev, A. I. (1978). Effect of a strong magnetic field on the spectrum of donors in InSb. Sov. Phys. Semicond., 11(12), 1395–1397.
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Blagosklonskaya, L. E., Gershenzon, E. M., Gol'tsman, G. N., & Elant'ev, A. I. (1977). Effect of a high magnetic field on the spectrum of donors in InSb. Fizika i Tekhnika Poluprovodnikov, 11(12), 2373–2375.
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Schubert, J., Semenov, A., Gol'tsman, G., Hübers, H. - W., Schwaab, G., Voronov, B., et al. (1999). Noise temperature of an NbN hot-electron bolometric mixer at frequencies from 0.7 THz to 5.2 THz. Supercond. Sci. Technol., 12(11), 748–750.
Abstract: We report on noise temperature measurements of an NbN phonon-cooled hot-electron bolometric mixer in the terahertz frequency range. The devices were 3 nm thick films with in-plane dimensions 1.7 × 0.2 µm2 and 0.9 × 0.2 µm2 integrated in a complementary logarithmic-spiral antenna. Measurements were performed at seven frequencies ranging from 0.7 THz to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz), 5600 K (4.3 THz) and 8800 K (5.2 THz).
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Gershenzon, E. M., Gol'tsman, G. N., Elantiev, A. I., Karasik, B. S., & Potoskuev, S. E. (1988). Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state. Sov. J. Low Temp. Phys., 14(7), 414–420.
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Gershenzon, E. M., Gol'tsman, G. N., Elant'ev, A. I., Karasik, B. S., & Potoskuev, S. E. (1988). Intense electromagnetic radiation heating of superconductor electrons in resistive state. Fizika Nizkikh Temperatur, 14(7), 753–763.
Abstract: An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model.
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Gershenzon, E. M., Gol'tsman, G. N., & Mel'nikov, A. P. (1971). Binding energy of a carrier with a neutral impurity atom in germanium and in silicon. JETP Lett., 14(5), 185–186.
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Gershenzon, E. M., & Gol'tsman, G. N. (1971). Transitions of electrons between excited states of donors in germanium. JETP Lett., 14(2), 63–65.
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Gershenzon, E. M., Gol'tsman, G. N., Emtsev, V. V., Mashovets, T. V., Ptitsyna, N. G., & Ryvkin, S. M. (1971). Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium. JETP Lett., 14(6), 241.
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Aksaev, E. E., Gershenzon, E. M., Gershenson, M. E., Goltsman, G. N., Semenov, A. D., & Sergeev, A. V. (1989). Prospects for using high-temperature superconductors to create electron bolometers. Pisma v Zhurnal Tekhnicheskoi Fiziki, 15(14), 88–93.
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