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Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. |
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Title |
Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure |
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Journal Article |
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Year |
1989 |
Publication |
Sov. Phys. and Technics of Semiconductors |
Abbreviated Journal |
Sov. Phys. and Technics of Semiconductors |
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23 |
Issue |
8 |
Pages |
843-846 |
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Keywords |
Ge, crystallography |
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Abstract |
Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. |
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Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge |
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no |
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Call Number |
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1692 |
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Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
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Title |
Capture of free holes by charged acceptors in uniaxially deformed Ge |
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Journal Article |
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Year |
1988 |
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Fizika i Tekhnika Poluprovodnikov |
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Fizika i Tekhnika Poluprovodnikov |
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Volume |
22 |
Issue |
3 |
Pages |
540-543 |
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Keywords |
Ge, free holes, capture |
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Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии. |
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Russian |
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Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge |
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1698 |
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Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
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Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
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Year |
1975 |
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JETP Lett. |
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JETP Lett. |
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22 |
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4 |
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95-97 |
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Keywords |
Ge, impurities, excited states, absorption spectra |
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1773 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. |
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Title |
Observation of free carrier resonances in p-type germanium at submillimeter wavelengths |
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Journal Article |
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Year |
1978 |
Publication |
Sov. Phys. Solid State |
Abbreviated Journal |
Sov. Phys. Solid State |
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Volume |
20 |
Issue |
4 |
Pages |
573-579 |
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Keywords |
p-Ge, free carriers, resonances |
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The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions. |
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1721 |
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Nebosis, R. S.; Heusinger, M. A.; Semenov, A. D.; Lang, P. T.; Schatz, W.; Steinke, R.; Renk, K. F.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M. |
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Title |
Ultrafast photoresponse of an YBa2Cu3O7-δ film to far-infrared radiation pulses |
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1993 |
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Opt. Lett. |
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Opt. Lett. |
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18 |
Issue |
2 |
Pages |
96-97 |
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Keywords |
YBCO HTS detectors |
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Abstract |
We report the observation of an ultrafast photoresponse of a high-T(c), film to far-infrared radiation pulses. The response of a sample, consisting of a current-carrying structured YBa(2)Cu(3)O(7-delta) film cooled to liquid-nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far-infrared laser in the frequency range from 0.7 to 7 THz. We found that the response time was limited by the time resolution, 120 ps, of our electronic registration equipment. |
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English |
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0146-9592 |
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PMID:19802049 |
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1660 |
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