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| Author |
Kaganov, M. L.; Lifshitz, I. M.; Tanatarov, L. V. |
| Title |
Relaxation between electrons and the crystalline lattice |
Type |
Journal Article |
Year  |
1957 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
4 |
Issue |
2 |
Pages |
173-178 |
| Keywords |
HEB, nonlinear equations, numerical model |
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894 |
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| Author |
Andreev, A. F. |
| Title |
The thermal conductivity of the intermediate state in superconductors |
Type |
Journal Article |
| Year |
1964 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
19 |
Issue |
5 |
Pages |
1228-1231 |
| Keywords |
superconductors, intermediate state, thermal conductivity |
| Abstract |
It is shown that, owing to over-the-barrier reflection of electron excitations at the boundary of the normal and superconducting phases, a temperature drop occurs when there is a flow of heat. The additional thermal resistance of a superconductor in the intermediate state is calculated. It is shown that it increases exponentially as the temperature is lowered and does not depend on the electron mean free path. |
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MSPU @ s @ Andreev_reflection |
Serial |
216 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
| Title |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
Type |
Journal Article |
| Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
14 |
Issue |
5 |
Pages |
185-186 |
| Keywords |
Ge, Si, neutral impurity atom, binding energy |
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1739 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N. |
| Title |
Transitions of electrons between excited states of donors in germanium |
Type |
Journal Article |
| Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
14 |
Issue |
2 |
Pages |
63-65 |
| Keywords |
Ge, donors, excited states |
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1740 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
| Title |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
Type |
Journal Article |
| Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
14 |
Issue |
6 |
Pages |
241 |
| Keywords |
Ge, gamma irradiation, defects, impurities |
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no |
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Serial |
1742 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
| Title |
Observation of the free-exciton spectrum at submillimeter wavelengths |
Type |
Journal Article |
| Year |
1972 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
16 |
Issue |
4 |
Pages |
161-162 |
| Keywords |
Ge, energy spectrum, free excitons |
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no |
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Serial |
1736 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
| Title |
Energy spectrum of free excitons in germanium |
Type |
Journal Article |
| Year |
1973 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
18 |
Issue |
3 |
Pages |
93 |
| Keywords |
Ge, free excitons, energy spectrum |
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no |
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1734 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
| Title |
Submillimeter spectroscopy of semiconductors |
Type |
Journal Article |
| Year |
1973 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
37 |
Issue |
2 |
Pages |
299-304 |
| Keywords |
semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons |
| Abstract |
The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. |
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1735 |
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| Author |
Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. |
| Title |
Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons |
Type |
Journal Article |
| Year |
1975 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
40 |
Issue |
2 |
Pages |
311-315 |
| Keywords |
Ge, cyclotron resonance |
| Abstract |
Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. |
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no |
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Serial |
1768 |
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| Author |
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
| Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
Type |
Journal Article |
| Year |
1975 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
22 |
Issue |
4 |
Pages |
95-97 |
| Keywords |
Ge, impurities, excited states, absorption spectra |
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no |
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1773 |
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