| Author |
Title |
Year  |
Publication |
Volume |
Pages |
| Gershenzon, E. M.; Gol'tsman, G. N. |
Transitions of electrons between excited states of donors in germanium |
1971 |
JETP Lett. |
14 |
63-65 |
| Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
Investigation of excited donor states in GaAs |
1974 |
Sov. Phys. Semicond. |
7 |
1248-1250 |
| Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
Absorption spectra in electron transitions between excited states of impurities in germanium |
1975 |
JETP Lett. |
22 |
95-97 |
| Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
Investigation of population and ionization of donor excited states in Ge |
1976 |
Physics of Semiconductors |
|
631-634 |
| Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
Carrier lifetime in excited states of shallow impurities in germanium |
1977 |
JETP Lett. |
25 |
539-543 |
| Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. |
Population of excited-states of small admixtures in germanium |
1978 |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
42 |
1154-1159 |
| Prober, D. E. |
Superconducting terahertz mixer using a transition-edge microbolometer |
1993 |
Appl. Phys. Lett. |
62 |
2119-2121 |
| Hoevers, H. F. C.; Bento, A. C.; Bruijn, M. P.; Gottardi, L.; Korevaar, M. A. N.; Mels, W. A.; de Korte, P. A. J. |
Thermal fluctuation noise in a voltage biased superconducting transition edge thermometer |
2000 |
Applied Physics Letters |
77 |
4421-4424 |
| Manus, M. K. Mc; Kash, J. A.; Steen, S. E.; Polonsky, S.; Tsang, J.C.; Knebel, D. R.; Huott, W. |
PICA: Backside failure analysis of CMOS circuits using picosecond imaging circuit analysis |
2000 |
Microelectronics Reliability |
40 |
1353-1358 |
| Stellari, Franco; Song, Peilin |
Testing of ultra low voltage CMOS microprocessors using the superconducting single-photon detector (SSPD) |
2005 |
Proc. 12th IPFA |
|
2 |
