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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
Title Observation of the free-exciton spectrum at submillimeter wavelengths Type Journal Article
Year (up) 1972 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 16 Issue 4 Pages 161-162
Keywords Ge, energy spectrum, free excitons
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Notes Approved no
Call Number Serial 1736
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Author Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G.
Title Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields Type Journal Article
Year (up) 1972 Publication Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников Abbreviated Journal Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников
Volume 6 Issue Pages 362-363
Keywords Ge, cyclotron resonance, quantizing magnetic fields
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Notes Approved no
Call Number Serial 1774
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Author Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G.
Title Energy spectrum of free excitons in germanium Type Journal Article
Year (up) 1973 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 18 Issue 3 Pages 93
Keywords Ge, free excitons, energy spectrum
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Notes Approved no
Call Number Serial 1734
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
Title Submillimeter spectroscopy of semiconductors Type Journal Article
Year (up) 1973 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 37 Issue 2 Pages 299-304
Keywords semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons
Abstract The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented.
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Notes Approved no
Call Number Serial 1735
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Author Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G.
Title Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons Type Journal Article
Year (up) 1975 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 40 Issue 2 Pages 311-315
Keywords Ge, cyclotron resonance
Abstract Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons.
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Notes Approved no
Call Number Serial 1768
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Author Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G.
Title Absorption spectra in electron transitions between excited states of impurities in germanium Type Journal Article
Year (up) 1975 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 22 Issue 4 Pages 95-97
Keywords Ge, impurities, excited states, absorption spectra
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Notes Approved no
Call Number Serial 1773
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Author Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I.
Title Intervalley cyclotron-impurity resonance of electrons in n-Ge Type Journal Article
Year (up) 1976 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 24 Issue 3 Pages 125-128
Keywords n-Ge, cyclotron-impurity resonance
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Notes Approved no
Call Number Serial 1730
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
Title Investigation of free excitons in Ge and their condensation at submillimeter wavelengths Type Journal Article
Year (up) 1976 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 43 Issue 1 Pages 116-122
Keywords Ge, free excitons
Abstract Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system.
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Notes Approved no
Call Number Serial 1731
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Author Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G.
Title Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions Type Journal Article
Year (up) 1976 Publication Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников Abbreviated Journal Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников
Volume 10 Issue Pages 1379-1383
Keywords Ge, cyclotron resonance, charged impurities,
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Notes Approved no
Call Number Serial 1772
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
Title Population and lifetime of excited states of shallow impurities in Ge Type Journal Article
Year (up) 1979 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 49 Issue 2 Pages 355-362
Keywords Ge, photothermal ionization, shallow impurities
Abstract An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed.
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Notes Approved no
Call Number Serial 1719
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title Cross section for binding of free carriers into excitons in germanium Type Journal Article
Year (up) 1981 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 33 Issue 11 Pages 574
Keywords Ge, excitons, photoconductivity
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Notes Approved no
Call Number Serial 1718
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Author Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title Kinetics of submillimeter impurity and exciton photoconduction in Ge Type Journal Article
Year (up) 1982 Publication Optics and Spectroscopy Abbreviated Journal Optics and Spectroscopy
Volume 52 Issue 4 Pages 454-455
Keywords Ge, exciton photoconduction
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Notes Approved no
Call Number Serial 1715
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title Kinetics of electron and hole binding into excitons in germanium Type Journal Article
Year (up) 1983 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 57 Issue 2 Pages 369-376
Keywords Ge, electron and hole binding
Abstract The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
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Notes Approved no
Call Number Serial 1711
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Author Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G.
Title Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors Type Journal Article
Year (up) 1983 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.
Volume 17 Issue 8 Pages 908-913
Keywords BWO spectroscopy, pure semiconductors, residual impurities
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Notes Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках Approved no
Call Number Serial 1714
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Author Goltsman, G. N.; Maliavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.
Title Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves Type Conference Article
Year (up) 1986 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
Volume 50 Issue Pages 280-281
Keywords Ge, axial compression loads, excitons, germanium, magnetic spectroscopy, submillimeter waves, Zeeman effect
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Language Russian Summary Language Original Title
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ISSN 0367-6755 ISBN Medium
Area Expedition Conference 3rd Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Kiev, Ukrainian SSR, May 1985
Notes Approved no
Call Number Serial 1708
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