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Gershenzon, E. M., Goltsman, G., Orlova, S., Ptitsina, N., & Gurvich, Y. (1971). Germanium hot-electron narrow-band detector. Sov. Radio Engineering And Electronic Physics, 16(8), 1346.
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Gershenzon, E. M., Gol'tsman, G. N., & Ptitsina, N. G. (1972). Observation of the free-exciton spectrum at submillimeter wavelengths. JETP Lett., 16(4), 161–162.
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Bondarenko, O. I., Gershenzon, E. M., Gurvich, Y. A., Orlova, S. L., & Ptitsina, N. G. (1972). Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields. Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников, 6, 362–363.
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Gershenzon, E. M., Gol'tsman, G., & Ptitsina, N. G. (1973). Energy spectrum of free excitons in germanium. JETP Lett., 18(3), 93.
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Gershenzon, E. M., Gol'tsman, G. N., & Ptitsina, N. G. (1973). Submillimeter spectroscopy of semiconductors. Sov. Phys. JETP, 37(2), 299–304.
Abstract: The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented.
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Gershenzon, E. M., Gurvich, Y. A., Orlova, S. L., & Ptitsina, N. G. (1975). Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons. Sov. Phys. JETP, 40(2), 311–315.
Abstract: Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons.
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Gershenzon, E. M., Orlov, L. A., & Ptitsina, N. G. (1975). Absorption spectra in electron transitions between excited states of impurities in germanium. JETP Lett., 22(4), 95–97.
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Gershenzon, E. M., Orlova, S. L., Orlov, L. A., Ptitsina, N. G., & Rabinovich, R. I. (1976). Intervalley cyclotron-impurity resonance of electrons in n-Ge. JETP Lett., 24(3), 125–128.
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Gershenzon, E. M., Gol'tsman, G. N., & Ptitsina, N. G. (1976). Investigation of free excitons in Ge and their condensation at submillimeter wavelengths. Sov. Phys. JETP, 43(1), 116–122.
Abstract: Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system.
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Gershenzon, E. M., Gurvich, Y. A., Orlova, S. L., & Ptitsina, N. G. (1976). Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions. Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников, 10, 1379–1383.
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Gershenzon, E., Goltsman, G., Orlov, L., & Ptitsina, N. (1978). Population of excited-states of small admixtures in germanium. In Izv. Akad. Nauk SSSR, Seriya Fizicheskaya (Vol. 42, pp. 1154–1159). Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia.
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Gershenzon, E. M., Gol'tsman, G. N., & Ptitsina, N. G. (1979). Population and lifetime of excited states of shallow impurities in Ge. Sov. Phys. JETP, 49(2), 355–362.
Abstract: An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed.
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Gershenzon, E. M., Gol'tsman, G. N., Multanovskii, V. V., & Ptitsina, N. G. (1981). Cross section for binding of free carriers into excitons in germanium. JETP Lett., 33(11), 574.
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Gershenzon, E. M., Goltsman, G. N., Multanovskii, V. V., & Ptitsina, N. G. (1982). Kinetics of submillimeter impurity and exciton photoconduction in Ge. Optics and Spectroscopy, 52(4), 454–455.
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Gershenzon, E. M., Gol'tsman, G. N., Multanovskii, V. V., & Ptitsina, N. G. (1983). Kinetics of electron and hole binding into excitons in germanium. Sov. Phys. JETP, 57(2), 369–376.
Abstract: The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
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