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Author Il’in, K.S.; Ptitsina, N.G.; Sergeev, A.V.; Gol’tsman, G.N.; Gershenzon, E.M.; Karasik, B.S.; Pechen, E.V.; Krasnosvobodtsev, S.I.
Title Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films Type Journal Article
Year (up) 1998 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 57 Issue 24 Pages 15623-15628
Keywords NbC films
Abstract A complex study of the electron-phonon interaction in thin NbC films with electron mean free path l=2–13nm gives strong evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference T2 term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5–10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence ∼Tn, with the exponent n=2.5–3. This behavior is explained well by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1585
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Author Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M.
Title Electron–phonon interaction in disordered conductors Type Journal Article
Year (up) 1999 Publication Phys. Rev. B Condens. Matter Abbreviated Journal Phys. Rev. B Condens. Matter
Volume 263-264 Issue Pages 190-192
Keywords disordered conductors, electron-phonon interaction
Abstract The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1765
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Author Sergeev, A.; Mitin, V.
Title Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials Type Journal Article
Year (up) 2000 Publication Phys. Rev. B. Abbreviated Journal Phys. Rev. B.
Volume 61 Issue 9 Pages 6041-6047
Keywords disordered conductors, scattering potential, electron-phonon interaction
Abstract Employing the Keldysh diagram technique, we calculate the electron-phonon energy relaxation rate in a conductor with the vibrating and static δ-correlated random electron-scattering potentials. If the scattering potential is completely dragged by phonons, this model yields the Schmid’s result for the inelastic electron-scattering rate τ−1e−ph. At low temperatures the effective interaction decreases due to disorder, and τ−1e−ph∝T4l (l is the electron mean-free path). In the presense of the static potential, quantum interference of numerous scattering processes drastically changes the effective electron-phonon interaction. In particular, at low temperatures the interaction increases, and τ−1e−ph∝T2/l. Along with an enhancement of the interaction, which is observed in disordered metallic films and semiconducting structures at low temperatures, the suggested model allows us to explain the strong sensitivity of the electron relaxation rate to the microscopic quality of a particular film.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 307
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Author Smolyaninov, I. I.; Zayats, A. V.; Stanishevsky, A.; Davis, C. C.
Title Optical control of photon tunneling through an array of nanometer-scale cylindrical channels Type Journal Article
Year (up) 2002 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 66 Issue 20 Pages 205414_1-205414_5
Keywords optical mixing
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 499
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Author Su, M. Y.; Carter, S. G.; Sherwin, M. S.
Title Strong-field terahertz optical mixing in excitons Type Journal Article
Year (up) 2003 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 67 Issue 12 Pages
Keywords optical mixing
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 500
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Author Tinkham, M.; Free, J. U.; Lau, C. N.; Markovic, N.
Title Hysteretic I–V curves of superconducting nanowires Type Journal Article
Year (up) 2003 Publication Phys. Rev. B Abbreviated Journal
Volume 68 Issue Pages 134515(1 to 7)
Keywords MoGe nanowires, self-heating effect
Abstract Experimental I–V curves of superconducting MoGe nanowires show hysteresis for the thicker wires and none for the thinner wires. A rather quantitative account of these data for representative wires is obtained by numerically solving the one-dimensional heat flow equation to find a self-consistent distribution of temperature and local resistivity along the wire, using the measured linear resistance R(T) as input. This suggests that the retrapping current in the hysteretic I–V curves is primarily determined by heating effects, and not by the dynamics of phase motion in a tilted washboard potential as often assumed. Heating effects and thermal fluctuations from the low-resistance state to a high-resistance, quasinormal regime appear to set independent upper bounds for the switching current.
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Notes Approved no
Call Number Serial 918
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Author Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Chulkova, G.; Gol’tsman, G. N.
Title Time delay of resistive-state formation in superconducting stripes excited by single optical photons Type Journal Article
Year (up) 2003 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 67 Issue 13 Pages 132508 (1 to 4)
Keywords NbN SSPD, SNSPD
Abstract We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1519
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Author Ciulin, V.; Carter, S. G.; Sherwin, M. S.
Title Terahertz optical mixing in biased GaAs single quantum wells Type Journal Article
Year (up) 2004 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 70 Issue 11 Pages 115312-(1-6)
Keywords optical mixing
Abstract
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 501
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Author Boogaard, G.R.; Verbruggen, A.H.; Belzig, W.; Klapwijk T.M.
Title Resistance of superconducting nanowires connected to normal-metal leads Type Journal Article
Year (up) 2004 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 69 Issue Pages 220503(R)(1-4)
Keywords
Abstract We study experimentally the low temperature resistance of superconducting nanowires connected to normal metal reservoirs. Wefind that a substantial fraction of the nanowires is resistive, down to the lowest tempera-ture measured, indicative of an intrinsic boundary resistance due to the Andreev-conversion of normal current to supercurrent. The results are successfully analyzed in terms of the kinetic equations for diffusive superconductors.
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Notes Approved no
Call Number RPLAB @ atomics90 @ Serial 960
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Author Huard, B.; Pothier, H.; Esteve, D.; Nagaev, K. E.
Title Electron heating in metallic resistors at sub-Kelvin temperature Type Journal Article
Year (up) 2007 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 76 Issue Pages 165426(1-9)
Keywords electron heating in resistor, HEB distributed model, HEB model, hot electrons
Abstract In the presence of Joule heating, the electronic temperature in a metallic resistor placed at sub-Kelvin temperatures can significantly exceed the phonon temperature. Electron cooling proceeds mainly through two processes: electronic diffusion to and from the connecting wires and electron-phonon coupling. The goal of this paper is to present a general solution of the problem in a form that can easily be used in practical situations. As an application, we compute two quantities that depend on the electronic temperature profile: the second and the third cumulant of the current noise at zero frequency, as a function of the voltage across the resistor. We also consider time-dependent heating, an issue relevant for experiments in which current pulses are used, for instance, in time-resolved calorimetry experiments.
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Notes Recommended by Klapwijk as example for writing the article on the HEB model. Approved no
Call Number Serial 936
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