| Records |
| Author |
Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Yu. P.; Kaurova, N. S.; Voronov, B. M.; Gol'tsman, G. N. |
| Title |
Hot electron bolometer mixer for 20 – 40 THz frequency range |
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Conference Article |
Year  |
2005 |
Publication |
Proc. 16th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 16th Int. Symp. Space Terahertz Technol. |
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Issue |
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Pages |
393-397 |
| Keywords |
IR NbN HEB mixers |
| Abstract |
The developed HEB mixer was based on a 5 nm thick NbN film deposited on a GaAs substrate. The active area of the film was patterned as a 30×20 μm 2 strip and coupled with a 50 Ohm coplanar line deposited in situ. An extended hemispherical germanium lens was used to focus the LO radiation on the mixer. The responsivity of the mixer was measured in a direct detection mode in the 25÷64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 μm wavelength CW CO 2 laser was utilized as a local oscillator. |
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Göteborg, Sweden |
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369 |
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Gol'tsman, Gregory N.; Vachtomin, Yuriy B.; Antipov, Sergey V.; Finkel, Matvey I.; Maslennikov, Sergey N.; Smirnov, Konstantin V.; Polyakov, Stanislav L.; Svechnikov, Sergey I.; Kaurova, Natalia S.; Grishina, Elisaveta V.; Voronov, Boris M. |
| Title |
NbN phonon-cooled hot-electron bolometer mixer for terahertz heterodyne receivers |
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Conference Article |
| Year |
2005 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
5727 |
Issue |
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Pages |
95-106 |
| Keywords |
NbN HEB mixers |
| Abstract |
We present the results of our studies of NbN phonon-cooled HEB mixers at terahertz frequencies. The mixers were fabricated from NbN film deposited on a high-resistivity Si substrate with an MgO buffer layer. The mixer element was integrated with a log-periodic spiral antenna. The noise temperature measurements were performed at 2.5 THz and at 3.8 THz local oscillator frequencies for the 3 x 0.2 μm2 active area devices. The best uncorrected receiver noise temperatures found for these frequencies are 1300 K and 3100 K, respectively. A water vapour discharge laser was used as the LO source. The largest gain bandwidth of 5.2 GHz was achieved for a mixer based on 2 nm thick NbN film deposited on MgO layer over Si substrate. The gain bandwidth of the mixer based on 3.5 nm NbN film deposited on Si with MgO is 4.2 GHz and the noise bandwidth for the same device amounts to 5 GHz. We also present the results of our research into decrease of the direct detection contribution to the measured Y-factor and a possible error of noise temperature calculation. The use of a square nickel cell mesh as an IR-filter enabled us to avoid the effect of direct detection and measure apparent value of the noise temperature which was 16% less than that obtained using conventional black polyethylene IR-filter. |
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Terahertz and Gigahertz Electronics and Photonics IV |
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378 |
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Goltsman, Gregory N.; Vachtomin, Yuriy B.; Antipov, Sergey V.; Finkel, Matvey I.; Maslennikov, Sergey N.; Polyakov, Stanislav L.; Svechnikov, Sergey I.; Kaurova, Natalia S.; Grishina, Elisaveta V.; Voronov, Boris M. |
| Title |
Low-noise NbN phonon-cooled hot-electron bolometer mixers for terahertz heterodyne receivers |
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Conference Article |
| Year |
2005 |
Publication |
Proc. 9-th WMSCI |
Abbreviated Journal |
Proc. 9-th WMSCI |
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9 |
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Pages |
154-159 |
| Keywords |
NbN HEB mixers |
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International Institute of Informatics and Systemics |
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547 |
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Hübers, H.-W.; Semenov, A.; Holldack, K.; Schade, U.; Wüstefeld, G.; Gol’tsman, G. |
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Time domain analysis of coherent terahertz synchrotron radiation |
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Journal Article |
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2005 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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87 |
Issue |
18 |
Pages |
184103 (1 to 3) |
| Keywords |
NbN HEB mixers, applications |
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The time structure of coherent terahertz synchrotron radiation at the electron storage ring of the Berliner Elektronensynchrotron und Speicherring Gesellschaft has been analyzed with a fast superconducting hot-electron bolometer. The emission from a single bunch of electrons was found to last ∼1500ps at frequencies around 0.4THz, which is much longer than the length of an electron bunch in the time domain (∼5ps). It is suggested that this is caused by multiple reflections at the walls of the beam line. The quadratic increase of the power with the number of electrons in the bunch as predicted for coherent synchrotron radiation and the transition from stable to bursting radiation were determined from a single storage ring fill pattern of bunches with different populations. |
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0003-6951 |
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1457 |
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Loudkov, D.; Tong, C.-Y. E.; Blundell, R.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol’tsman, G. |
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An investigation of the performance of the superconducting HEB mixer as a function of its RF embedding impedance |
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Journal Article |
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2005 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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15 |
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2 |
Pages |
472-475 |
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waveguide NbN HEB mixers |
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We have conducted an investigation of the optimal embedding impedance for a waveguide superconducting hot-electron bolometric (HEB) mixer. Three mixer chip designs for 800 GHz, offering nominal embedding resistances of 70 /spl Omega/, 35 /spl Omega/, and 15 /spl Omega/, have been developed. We used both High Frequency Structure Simulator (HFSS) software and scale model impedance measurements in the design process. We subsequently fabricated HEB mixers to these designs using 3-4 nm thick NbN thin film. Receiver noise temperature measurements and Fourier Transform Spectrometer (FTS) scans were performed to determine the optimal combination of embedding impedance and normal-state resistance for a 50 Ohm IF load impedance. A receiver noise temperature of 440 K was measured at a local oscillator frequency 850 GHz for a mixer with normal state resistance of 62 /spl Omega/ incorporated into a circuit offering a nominal embedding impedance of 70 /spl Omega/. We conclude from our data that, for low noise operation, the normal state resistance of the HEB mixer element should be close to the embedding impedance of the mixer mount. |
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1439677 |
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1464 |
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