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Il'in, K. S.; Lindgren, M.; Currie, M. A.; Semenov, D.; Gol'tsman, G. N.; Sobolewski, Roman; Cherednichenko, S. I.; Gershenzon, E. M. |
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Title |
Picosecond hot-electron energy relaxation in NbN superconducting photodetectors |
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Journal Article |
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Year  |
2000 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
76 |
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19 |
Pages |
2752-2754 |
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Keywords |
NbN HEB detectors, two-temperature model, IF bandwidth |
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We report time-resolved characterization of superconducting NbN hot-electron photodetectors using an electro-optic sampling method. Our samples were patterned into micron-size microbridges from 3.5-nm-thick NbN films deposited on sapphire substrates. The devices were illuminated with 100 fs optical pulses, and the photoresponse was measured in the ambient temperature range between 2.15 and 10.6 K (superconducting temperature transition TC). The experimental data agreed very well with the nonequilibrium hot-electron, two-temperature model. The quasiparticle thermalization time was ambient temperature independent and was measured to be 6.5 ps. The inelastic electron–phonon scattering time Ï„e–ph tended to decrease with the temperature increase, although its change remained within the experimental error, while the phonon escape time Ï„es decreased almost by a factor of two when the sample was put in direct contact with superfluid helium. Specifically, Ï„e–ph and Ï„es, fitted by the two-temperature model, were equal to 11.6 and 21 ps at 2.15 K, and 10(±2) and 38 ps at 10.5 K, respectively. The obtained value of Ï„e–ph shows that the maximum intermediate frequency bandwidth of NbN hot-electron phonon-cooled mixers operating at TC can reach 16(+4/–3) GHz if one eliminates the bolometric phonon-heating effect. |
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0003-6951 |
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856 |
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Cherednichenko, S.; Rönnung, F.; Gol'tsman, G.; Kollberg, E.; Winkler, D. |
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Title |
YBa2Cu3O7−δ hot-electron bolometer mixer |
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Journal Article |
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Year |
2000 |
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Phys. C: Supercond. |
Abbreviated Journal |
Phys. C: Supercond. |
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Volume |
341-348 |
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2653-2654 |
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Keywords |
YBCO HTS HEB mixers |
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We present an investigation of hot-electron bolometric mixer based on YBa2Cu3O7−δ (YBCO) superconducting thin film. Mixer conversion loss, absorbed local oscillator power and intermediate frequency bandwidth was measured at the local oscillator frequency 600 GHz. The fabrication technique for nanoscale YBCO hot-electron bolometer (HEB) mixer integrated into planar antenna structure is described. |
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0921-4534 |
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1552 |
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Semenov, A. D.; Gol’tsman, G. N. |
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Title |
Nonthermal mixing mechanism in a diffusion-cooled hot-electron detector |
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2000 |
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J. Appl. Phys. |
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J. Appl. Phys. |
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87 |
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1 |
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502-510 |
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NbN HEB mixers, nonthermal |
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We present an analysis of a diffusion-cooled hot-electron detector fabricated from clean superconducting material with low transition temperature. The distinctive feature of a clean material, i.e., material with large electron mean free path, is a relatively weak inelastic electron scattering that is not sufficient for the establishment of an elevated thermodynamic electron temperature when the detector is subjected to irradiation. We propose an athermal model of a diffusion-cooled detector that relies on suppression of the superconducting energy gap by the actual dynamic distribution of excess quasiparticles. The resistive state of the device is caused by the electric field penetrating into the superconducting bridge from metal contacts. The dependence of the penetration length on the energy gap delivers the detection mechanism. The sources of the electric noise are equilibrium fluctuations of the number of thermal quasiparticles and frequency dependent shot noise. Using material parameters typical for A1, we evaluate performance of the device in the heterodyne regime at terahertz frequencies. Estimates show that the mixer may have a noise temperature of a few quantum limits and a bandwidth of a few tens of GHz, while the required local oscillator power is in the μW range due to ineffective suppression of the energy gap by quasiparticles with high energies. |
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0021-8979 |
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1558 |
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Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
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Title |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
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2000 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
71 |
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1 |
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31-34 |
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2DEG, GaAs/AlGaAs heterostructures |
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The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons. |
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0021-3640 |
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http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”) |
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1559 |
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Kroug, M.; Cherednichenko, S.; Merkel, H.; Kollberg, E.; Voronov, B.; Gol'tsman, G.; Hübers, H. W.; Richter, H. |
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Title |
NbN hot electron bolometric mixers for terahertz receivers |
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Journal Article |
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Year |
2001 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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11 |
Issue |
1 |
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962-965 |
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NbN HEB mixers |
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Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two. |
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312 |
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Gershenson, M. E.; Gong, D.; Sato, T.; Karasik, B. S.; Sergeev, A. V. |
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Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures |
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2001 |
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Appl. Phys. Lett. |
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79 |
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2049-2051 |
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HEB detector, FIR, far infrared |
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RPLAB @ s @ heb_eph_interaction_Gershenzon |
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315 |
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Semenov, A.; Goltsman, G.; Korneev, A. |
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Quantum detection by current carrying superconducting film |
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Journal Article |
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2001 |
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Phys. C: Supercond. |
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Phys. C: Supercond. |
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351 |
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4 |
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349-356 |
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quantum detection, phase slip centers, quasiparticle diffusion |
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We describe a novel quantum detection mechanism in the superconducting film carrying supercurrent. The mechanism incorporates growing normal domain and breaking of superconductivity by the bias current. A single photon absorbed in the film creates transient normal spot that causes redistribution of the current and, consequently, increase of the current density in superconducting areas. When the current density exceeds the critical value, the film switches into resistive state and generates the voltage pulse. Analysis shows that a submicron-wide film of conventional low temperature superconductor operated in liquid helium may detect single far-infrared photon. The amplitude and duration of the voltage pulse are in the millivolt and picosecond range, respectively. The quantitative model is presented that allows simulation of the detector utilizing this detection mechanism. |
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0921-4534 |
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507 |
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Gol’tsman, G.; Okunev, O.; Chulkova, G.; Lipatov, A.; Dzardanov, A.; Smirnov, K.; Semenov, A.; Voronov, B.; Williams, C.; Sobolewski, R. |
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Fabrication and properties of an ultrafast NbN hot-electron single-photon detector |
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2001 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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11 |
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1 |
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574-577 |
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NbN SSPD, SNSPD |
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A new type of ultra-high-speed single-photon counter for visible and near-infrared wavebands based on an ultrathin NbN hot-electron photodetector (HEP) has been developed. The detector consists of a very narrow superconducting stripe, biased close to its critical current. An incoming photon absorbed by the stripe produces a resistive hotspot and causes an increase in the film’s supercurrent density above the critical value, leading to temporary formation of a resistive barrier across the device and an easily measurable voltage pulse. Our NbN HEP is an ultrafast (estimated response time is 30 ps; registered time, due to apparatus limitations, is 150 ps), frequency unselective device with very large intrinsic gain and negligible dark counts. We have observed sequences of output pulses, interpreted as single-photon events for very weak laser beams with wavelengths ranging from 0.5 /spl mu/m to 2.1 /spl mu/m and the signal-to-noise ratio of about 30 dB. |
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1558-2515 |
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1547 |
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Gol’tsman, G. N.; Smirnov, K. V. |
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Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
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2001 |
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Jetp Lett. |
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Jetp Lett. |
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74 |
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9 |
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474-479 |
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2DEG, AlGaAs/GaAs heterostructures |
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Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered. |
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0021-3640 |
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По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах |
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1541 |
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Somani, S.; Kasapi, S.; Wilsher, K.; Lo, W.; Sobolewski, R.; Gol’tsman, G. |
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New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect |
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2001 |
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J. Vac. Sci. Technol. B |
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J. Vac. Sci. Technol. B |
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19 |
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6 |
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2766-2769 |
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NbN SSPD, SNSPD |
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A novel superconducting single-photon detector (SSPD), intrinsically capable of high quantum efficiency (up to 20%) over a wide spectral range (ultraviolet to infrared), with low dark counts (<1 cps), and fast (<40 ps) timing resolution, is described. This SSPD has been used to perform timing measurements on complementary metal–oxide–semiconductor integrated circuits (ICs) by detecting the infrared light emission from switching transistors. Measurements performed from the backside of a 0.13 μm geometry flip–chip IC are presented. Other potential applications for this detector are in telecommunications, quantum cryptography, biofluorescence, and chemical kinetics. |
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0734211X |
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