| Records |
| Author |
Matyushkin, Y.; Kaurova, N.; Voronov, B.; Goltsman, G.; Fedorov, G. |
| Title |
On chip carbon nanotube tunneling spectroscopy |
Type |
Journal Article |
Year  |
2020 |
Publication |
Fullerenes, Nanotubes and Carbon Nanostructures |
Abbreviated Journal |
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| Volume |
28 |
Issue |
1 |
Pages |
50-53 |
| Keywords |
carbon nanotubes, CNT, scanning tunneling microscope, STM |
| Abstract |
We report an experimental study of the band structure of individual carbon nanotubes (SCNTs) based on investigation of the tunneling density of states, i.e. tunneling spectroscopy. A common approach to this task is to use a scanning tunneling microscope (STM). However, this approach has a number of drawbacks, to overcome which, we propose another method – tunneling spectroscopy of SCNTs on a chip using a tunneling contact. This method is simpler, cheaper and technologically advanced than the STM. Fabrication of a tunnel contact can be easily integrated into any technological route, therefore, a tunnel contact can be used, for example, as an additional tool in characterizing any devices based on individual CNTs. In this paper we demonstrate a simple technological procedure that results in fabrication of good-quality tunneling contacts to carbon nanotubes. |
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| Publisher |
Taylor & Francis |
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doi:10.1080/1536383X.2019.1671365 |
Serial |
1269 |
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| Author |
Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. |
| Title |
Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation |
Type |
Journal Article |
| Year |
2021 |
Publication |
Adv. Electron. Mater. |
Abbreviated Journal |
Adv. Electron. Mater. |
| Volume |
7 |
Issue |
3 |
Pages |
2000872 |
| Keywords |
SWCNT transistors |
| Abstract |
The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications. |
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2199-160X |
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Serial |
1843 |
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