| Records |
| Author |
Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory |
| Title |
Integrated contra-directional coupler for NV-centers photon filtering |
Type |
Conference Article |
Year  |
2020 |
Publication |
Proc. 32-nd EMSS |
Abbreviated Journal |
Proc. 32-nd EMSS |
| Volume |
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Issue |
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Pages |
354-360 |
| Keywords |
NV-centers, nanodiamonds, quantum photonic integrated circuits, contra-direction coupler, Bragg gratings |
| Abstract |
We modelled an integrated optical contra-directional coupler on silicon nitride platform. Performance of the filter was studied depending on different parameters, including the grating period and the height of teeth of the Bragg grating near 637 nm operation wavelength. The obtained results can be used for a design and fabrication of quantum photonic integrated circuits with on-chip single-photon NV-centers in nanodiamonds. |
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Edition |
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| ISSN |
2724-0029 |
ISBN |
978-88-85741-44-7 |
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Conference |
32nd European Modeling & Simulation Symposium |
| Notes |
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no |
| Call Number |
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Serial |
1839 |
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| Author |
Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory |
| Title |
Silicon nitride photonic crystal cavity coupled with NV-centers in nanodiamonds |
Type |
Conference Article |
| Year |
2020 |
Publication |
Proc. 32-nd EMSS |
Abbreviated Journal |
Proc. 32-nd EMSS |
| Volume |
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Issue |
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Pages |
344-348 |
| Keywords |
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| Abstract |
The development of integrated quantum photonics requires a high efficient excitation and coupling of a single photon source with on-chip devices. In this paper, we show our results of modelling for high-Q photonic crystal cavity, optimized for zero phonon line emission of NV-centers in nanodiamonds. Modelling was performed for the silicon nitride platform and obtained a quality factor equals to 6136 at 637 nm wavelength. |
| Address |
NV-centers, nanodiamonds |
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| ISSN |
2724-0029 |
ISBN |
978-88-85741-44-7 |
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Conference |
32nd European Modeling & Simulation Symposium |
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no |
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Serial |
1840 |
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| Author |
Pentin, I.; Vakhtomin, Y.; Seleznev, V.; Smirnov, K. |
| Title |
Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation |
Type |
Journal Article |
| Year |
2020 |
Publication |
Sci. Rep. |
Abbreviated Journal |
Sci. Rep. |
| Volume |
10 |
Issue |
1 |
Pages |
16819 |
| Keywords |
VN HEB |
| Abstract |
The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively. |
| Address |
National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia |
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2045-2322 |
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PMID:33033360; PMCID:PMC7546726 |
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1797 |
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| Author |
Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Zolotov, P. I.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V. |
| Title |
Influence of deposited material energy on superconducting properties of the WSi films |
Type |
Conference Article |
| Year |
2020 |
Publication |
IOP Conf. Ser.: Mater. Sci. Eng. |
Abbreviated Journal |
IOP Conf. Ser.: Mater. Sci. Eng. |
| Volume |
781 |
Issue |
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Pages |
012013 (1 to 6) |
| Keywords |
WSi SSPD, SNSPD |
| Abstract |
WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A. |
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1757-899X |
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no |
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Serial |
1798 |
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Antipov, A. V.; Seleznev, V. A.; Vakhtomin, Y. B.; Morozov, P. V.; Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Smirnov, K. |
| Title |
Investigation of WSi and NbN superconducting single-photon detectors in mid-IR range |
Type |
Conference Article |
| Year |
2020 |
Publication |
IOP Conf. Ser.: Mater. Sci. Eng. |
Abbreviated Journal |
IOP Conf. Ser.: Mater. Sci. Eng. |
| Volume |
781 |
Issue |
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Pages |
012011 (1 to 5) |
| Keywords |
WSi, NbN SSPD, SNSPD |
| Abstract |
Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 μm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures reaches one order of magnitude higher in comparison with structures based on NbN thin films at 2.5 μm. |
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1757-899X |
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no |
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Serial |
1799 |
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