| Author |
Title |
Year  |
Publication |
Volume |
Pages |
| Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time |
1996 |
Phys. Rev. B Condens. Matter. |
53 |
R7592-R7595 |
| Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures |
1995 |
JETP Lett. |
61 |
591-595 |
| Uchiki, Hisao; Kobayashi, Takayoshi; Sakaki, Hiroyuki |
Photoluminescence and energyâ€loss rates in GaAs quantum wells under highâ€density excitation |
1987 |
J. Appl. Phys. |
62 |
1010-1016 |
| Shah, Jagdeep; Pinczuk, A.; Gossard, A. C.; Wiegmann, W. |
Energy-loss rates for hot electrons and holes in GaAs quantum wells |
1985 |
Phys. Rev. Lett. |
54 |
2045-2048 |
| Shaha, Jagdeep; Pinczukb, A.; Gossardb, A. C.; Wiegmannb, W. |
Hot carrier energy loss rates in GaAs quantum wells: large differences between electrons and holes |
1985 |
Phys. B+C |
134 |
174-178 |
