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Blagosklonskaya, L. E.; Gershenzon, E. M.; Goltsman, G. N.; Elantev, A. I. |
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Title |
Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors |
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1978 |
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Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Abbreviated Journal |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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42 |
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6 |
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1231-1234 |
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spectrum, semiconductors, admixtures, strong magnetic-field |
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Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia |
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blagosklonskaya1978effect |
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1724 |
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Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. |
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Title |
Effect of a strong magnetic field on the spectrum of donors in InSb |
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Journal Article |
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Year |
1978 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
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Volume |
11 |
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12 |
Pages |
1395-1397 |
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Keywords |
InSb, spectrum of donors, strong magnetic field |
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1725 |
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Author |
Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R. |
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Title |
Character of submillimeter photoconductivity in n-lnSb |
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Journal Article |
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Year |
1979 |
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Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
49 |
Issue |
1 |
Pages |
121-128 |
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A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8). |
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RPLAB @ phisix @ |
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985 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Population and lifetime of excited states of shallow impurities in Ge |
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1979 |
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Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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49 |
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2 |
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355-362 |
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Keywords |
Ge, photothermal ionization, shallow impurities |
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An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed. |
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1719 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. |
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Title |
Capture of photoexcited carriers by shallow impurity centers in germanium |
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Journal Article |
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1979 |
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Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
50 |
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4 |
Pages |
728-734 |
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Keywords |
Ge, photoexcited carriers, shallow impurity centers |
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Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities. |
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1720 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Title |
Cross section for binding of free carriers into excitons in germanium |
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1981 |
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JETP Lett. |
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JETP Lett. |
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Volume |
33 |
Issue |
11 |
Pages |
574 |
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Ge, excitons, photoconductivity |
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1718 |
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Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Title |
Kinetics of submillimeter impurity and exciton photoconduction in Ge |
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1982 |
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Optics and Spectroscopy |
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Optics and Spectroscopy |
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52 |
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4 |
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454-455 |
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Keywords |
Ge, exciton photoconduction |
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1715 |
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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state |
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1982 |
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JETP Lett. |
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JETP Lett. |
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36 |
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7 |
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296-299 |
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HEB |
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Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии |
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1717 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Title |
Kinetics of electron and hole binding into excitons in germanium |
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Journal Article |
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1983 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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57 |
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2 |
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369-376 |
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Ge, electron and hole binding |
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The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states. |
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1711 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D. |
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Title |
Submillimeter backward wave tube spectrometer for measuring superconducting film transmission |
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1983 |
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Pribory i Tekhnika Eksperimenta |
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Pribory i Tekhnika Eksperimenta |
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26 |
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5 |
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134-137 |
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BWO spectroscopy, spectrometer, transmission |
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A spectrometer employing six backward wave tubes is described. It is intended for investigation of superconductors in the 0.2-3 mm range of wave lengths. During the measurement of the transmission spectrum it is possible to determine the energy gap for superconduct1ng films 50 to 4000 A thick. The transmission factor can vary from 10-1 to 10-9. Spectrum of relation of film transmission factors in superconducting and normal states is measured for determining the energy gap 2 Δ. The transmission spectrum obtained by means of a computer for vanadium film 300 A thick is given as an example. The energy gap 2 Δ = 1.4 MeV |
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Russian |
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0032-8162 |
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Субмиллиметровый спектрометр с лампами обратной волны для измерения пропускания сверхпроводниковых пленок |
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1713 |
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