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Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. Relaxation of the resistive superconducting state in boron-doped diamond films 2016 Phys. Rev. B 10.1103/PhysRevB.93.064506 details   doi
Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. Graphene-layer and graphene-nanoribbon FETs as THz detectors 2018 J. Phys.: Conf. Ser. 10.1088/1742-6596/1124/5/051054 details   doi
Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes 2018 J. Phys.: Conf. Ser. 10.1088/1742-6596/1124/5/051050 details   doi
Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. Towards to the development of THz detectors based on carbon nanostructures 2018 J. Phys.: Conf. Ser. 10.1088/1742-6596/1092/1/012039 details   doi
Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors 2018 Appl. Phys. Lett. 10.1063/1.5018151 details   doi
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