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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Title |
Submillimeter spectroscopy of semiconductors |
Type |
Journal Article |
Year |
1973 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
37 |
Issue |
2 |
Pages |
299-304 |
Keywords |
semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons |
Abstract |
The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. |
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1735 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Title |
Observation of the free-exciton spectrum at submillimeter wavelengths |
Type |
Journal Article |
Year |
1972 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
16 |
Issue |
4 |
Pages |
161-162 |
Keywords |
Ge, energy spectrum, free excitons |
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1736 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
Title |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
Type |
Journal Article |
Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
14 |
Issue |
5 |
Pages |
185-186 |
Keywords |
Ge, Si, neutral impurity atom, binding energy |
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1739 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N. |
Title |
Transitions of electrons between excited states of donors in germanium |
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Journal Article |
Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
14 |
Issue |
2 |
Pages |
63-65 |
Keywords |
Ge, donors, excited states |
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1740 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
Title |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
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Journal Article |
Year |
1971 |
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JETP Lett. |
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JETP Lett. |
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14 |
Issue |
6 |
Pages |
241 |
Keywords |
Ge, gamma irradiation, defects, impurities |
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1742 |
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Author |
Andreev, A. F. |
Title |
The thermal conductivity of the intermediate state in superconductors |
Type |
Journal Article |
Year |
1964 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
19 |
Issue |
5 |
Pages |
1228-1231 |
Keywords |
superconductors, intermediate state, thermal conductivity |
Abstract |
It is shown that, owing to over-the-barrier reflection of electron excitations at the boundary of the normal and superconducting phases, a temperature drop occurs when there is a flow of heat. The additional thermal resistance of a superconductor in the intermediate state is calculated. It is shown that it increases exponentially as the temperature is lowered and does not depend on the electron mean free path. |
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MSPU @ s @ Andreev_reflection |
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216 |
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Author |
Kaganov, M. L.; Lifshitz, I. M.; Tanatarov, L. V. |
Title |
Relaxation between electrons and the crystalline lattice |
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Journal Article |
Year |
1957 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
4 |
Issue |
2 |
Pages |
173-178 |
Keywords |
HEB, nonlinear equations, numerical model |
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894 |
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