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Author Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D.
Title Graphene-layer and graphene-nanoribbon FETs as THz detectors Type Conference Article
Year (down) 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1124 Issue Pages 051054
Keywords field-effect transistor, FET, monolayer graphene, graphene nanoribbons
Abstract We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1300
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Author Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F.
Title Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes Type Conference Article
Year (down) 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1124 Issue Pages 051050 (1 to 5)
Keywords field-effect transistor, FET, carbon nanotube, CNT
Abstract In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1301
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Author Sidorova, M. V.; Kozorezov, A. G.; Semenov, A. V.; Korneeva, Y. P.; Mikhailov, M. Y.; Devizenko, A. Y.; Korneev, A. A.; Chulkova, G. M.; Goltsman, G. N.
Title Nonbolometric bottleneck in electron-phonon relaxation in ultrathin WSi films Type Journal Article
Year (down) 2018 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 97 Issue 18 Pages 184512 (1 to 13)
Keywords WSi films, diffusion constant, SSPD, SNSPD
Abstract We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in τe−ph∼140–190 ps at TC=3.4K, supporting the results of earlier measurements by independent techniques.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9950 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1305
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Author Tretyakov, I. V.; Anfertyev, V. A.; Revin, L. S.; Kaurova, N. S.; Voronov, B. M.; Vaks, V. L.; Goltsman, G. N.
Title Sensitivity and resolution of a heterodyne receiver based on the NbN HEB mixer with a quantum-cascade laser as a local oscillator Type Journal Article
Year (down) 2018 Publication Radiophys. Quant. Electron. Abbreviated Journal Radiophys. Quant. Electron.
Volume 60 Issue 12 Pages 988-992
Keywords NbN HEB mixer
Abstract We present the results of experimental studies of the basic characteristics and operation features of a terahertz heterodyne detector based on the superconducting NbN HEB mixer and a quantum cascade laser as a local oscillator operating at a frequency of 2.02 THz. The measured noise temperature of such a mixer amounted to 1500 K. The spectral resolution of the detector is determined by the width of the local-oscillator spectral line whose measured value does not exceed 1 MHz. The quantum-cascade laser could be linearly tuned with respect to frequency with the coefficient 7.2 MHz/mA within the limits of the current oscillation bandwidth.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0033-8443 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1307
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Author Gayduchenko, I. A.; Fedorov, G. E.; Moskotin, M. V.; Yagodkin, D. I.; Seliverstov, S. V.; Goltsman, G. N.; Yu Kuntsevich, A.; Rybin, M. G.; Obraztsova, E. D.; Leiman, V. G.; Shur, M. S.; Otsuji, T.; Ryzhii, V. I.
Title Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices Type Journal Article
Year (down) 2018 Publication Nanotechnol. Abbreviated Journal Nanotechnol.
Volume 29 Issue 24 Pages 245204 (1 to 8)
Keywords single layer graphene, graphene nanoribbons
Abstract We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity.
Address Physics Department, Moscow State University of Education, Moscow 119991, Russia. National Research Center 'Kurchatov Institute', 123182, Moscow, Russia
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484 ISBN Medium
Area Expedition Conference
Notes PMID:29553479 Approved no
Call Number Serial 1308
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