Smirnov, K. V., Ptitsina, N. G., Vakhtomin, Y. B., Verevkin, A. A., Gol’tsman, G. N., & Gershenzon, E. M. (2000). Energy relaxation of two-dimensional electrons in the quantum Hall effect regime. JETP Lett., 71(1), 31–34.
Abstract: The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons.
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Verevkin, A., Gershenzon, E. M., Gol'tsman, G. N., Ptitsina, N. G., Chulkova, G. M., Smirnov, K. S., et al. (2002). Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions. In Mater. Sci. Forum (Vol. 384-3, pp. 107–116).
Abstract: A new microwave technique was successfully applied for direct studies of energy relaxation times in two-dimensional AlGaAs/GaAs structures under quasi-equilibrium conditions in the nanosecond and picosecond time scale. We report our results of energy relaxation time measurements in the temperature range 1.6-50 K, in quantum Hall effect regime in magnetic fields up to 4 T.
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