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Author Vorobyov, V. V.; Kazakov, A. Y.; Soshenko, V. V.; Korneev, A. A.; Shalaginov, M. Y.; Bolshedvorskii, S. V.; Sorokin, V. N.; Divochiy, A. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Voronov, B. M.; Shalaev, V. M.; Akimov, A. V.; Goltsman, G. N.
Title Superconducting detector for visible and near-infrared quantum emitters [Invited] Type Journal Article
Year (up) 2017 Publication Opt. Mater. Express Abbreviated Journal Opt. Mater. Express
Volume 7 Issue 2 Pages 513-526
Keywords SSPD, SNSPD
Abstract Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon detectors specifically optimized for the 500–1100 nm wavelength range, which overlaps with the emission spectrum of many interesting solid-state atom-like systems, such as nitrogen-vacancy and silicon-vacancy centers in diamond. The fabricated detectors have a wide dynamic range (up to 350 million counts per second), low dark count rate (down to 0.1 counts per second), excellent jitter (62 ps), and the possibility of on-chip integration with a quantum emitter. In addition to performance characterization, we tested the detectors in real experimental conditions involving nanodiamond nitrogen-vacancy emitters enhanced by a hyperbolic metamaterial.
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2159-3930 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1234
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Author Kovalyuk, V.; Ferrari, S.; Kahl, O.; Semenov, A.; Shcherbatenko, M.; Lobanov, Y.; Ozhegov, R.; Korneev, A.; Kaurova, N.; Voronov, B.; Pernice, W.; Gol'tsman, G.
Title On-chip coherent detection with quantum limited sensitivity Type Journal Article
Year (up) 2017 Publication Sci Rep Abbreviated Journal Sci Rep
Volume 7 Issue 1 Pages 4812
Keywords waveguide, SSPD, SNSPD
Abstract While single photon detectors provide superior intensity sensitivity, spectral resolution is usually lost after the detection event. Yet for applications in low signal infrared spectroscopy recovering information about the photon's frequency contributions is essential. Here we use highly efficient waveguide integrated superconducting single-photon detectors for on-chip coherent detection. In a single nanophotonic device, we demonstrate both single-photon counting with up to 86% on-chip detection efficiency, as well as heterodyne coherent detection with spectral resolution f/f exceeding 10(11). By mixing a local oscillator with the single photon signal field, we observe frequency modulation at the intermediate frequency with ultra-low local oscillator power in the femto-Watt range. By optimizing the nanowire geometry and the working parameters of the detection scheme, we reach quantum-limited sensitivity. Our approach enables to realize matrix integrated heterodyne nanophotonic devices in the C-band wavelength range, for classical and quantum optics applications where single-photon counting as well as high spectral resolution are required simultaneously.
Address National Research University Higher School of Economics, Moscow, 101000, Russia. ggoltsman@hse.ru
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2045-2322 ISBN Medium
Area Expedition Conference
Notes PMID:28684752; PMCID:PMC5500578 Approved no
Call Number RPLAB @ kovalyuk @ Serial 1129
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Author Finkel, M.; Thierschmann, H.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M.
Title Performance of THz components based on microstrip PECVD SiNx technology Type Journal Article
Year (up) 2017 Publication IEEE Trans. THz Sci. Technol. Abbreviated Journal IEEE Trans. THz Sci. Technol.
Volume 7 Issue 6 Pages 765-771
Keywords transmission line measurements, power transmission lines, dielectrics, couplers, submillimeter wave circuits, coplanar waveguides, micromechanical devices
Abstract We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2156-342X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1294
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Author Seliverstov, S. V.; Anfertyev, V. A.; Tretyakov, I. V.; Ozheredov, I. A.; Solyankin, P. M.; Revin, L. S.; Vaks, V. L.; Rusova, A. A.; Goltsman, G. N.; Shkurinov, A. P.
Title Terahertz heterodyne receiver with an electron-heating mixer and a heterodyne based on the quantum-cascade laser Type Journal Article
Year (up) 2017 Publication Radiophys. Quant. Electron. Abbreviated Journal Radiophys. Quant. Electron.
Volume 60 Issue 7 Pages 518-524
Keywords NbN HEB mixer, QCL
Abstract We study characteristics of the laboratory prototype of a terahertz heterodyne receiver with an electron-heating mixer and a heterodyne based on the quantum-cascade laser. The results obtained demonstrate the possibility to use this receiver as a basis for creation of a high-sensitivity terahertz spectrometer, which can be used in many basic and practical applications. A significant advantage of this receiver will be the possibility of placing the mixer and heterodyne in the same cryostat, which will reduce the device dimensions considerably. The obtained experimental results are analyzed, and methods of optimizing the parameters of the receiver are proposed.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0033-8443 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1322
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Author Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G.
Title Development of a silicon membrane-based multipixel hot electron bolometer receiver Type Journal Article
Year (up) 2017 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 27 Issue 4 Pages 1-5
Keywords Multi-pixel, NbN HEB, silicon-on-insulator, horn array
Abstract We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1324
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Author Korneeva, Y.; Florya, I.; Vdovichev, S.; Moshkova, M.; Simonov, N.; Kaurova, N.; Korneev, A.; Goltsman, G.
Title Comparison of hot spot formation in nbn and mon thin superconducting films after photon absorption Type Journal Article
Year (up) 2017 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 27 Issue 4 Pages 1-4
Keywords MoNx SSPD
Abstract In superconducting single-photon detectors (SSPD), the efficiency of local suppression of superconductivity and hotspot formation is controlled by diffusivity and electron-phonon interaction time. Here, we selected a material, 3.6-nm-thick MoNx film, which features diffusivity close to those of NbN traditionally used for SSPD fabrication, but with electron-phonon interaction time an order of magnitude larger. In MoN ∞ detectors, we study the dependence of detection efficiency on bias current, photon energy, and strip width, and compare it with NbN SSPD. We observe nonlinear current-energy dependence in MoNx SSPD and more pronounced plateaus in dependences of detection efficiency on bias current, which we attribute to longer electron-phonon interaction time.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1325
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Author Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M.
Title Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers Type Journal Article
Year (up) 2017 Publication IEEE Trans. Terahertz Sci. Technol. Abbreviated Journal IEEE Trans. Terahertz Sci. Technol.
Volume 7 Issue 1 Pages 53-59
Keywords NbN HEB mixer
Abstract In this paper, we investigated the influence of the GaN buffer layer on the phonon escape time of phonon-cooled hot electron bolometers (HEBs) based on NbN material and compared our findings to conventionally employed Si substrate. The presented experimental setup and operation of the HEB close to the critical temperature of the NbN film allowed for the extraction of phonon escape time in a simplified manner. Two independent experiments were performed at GARD/Chalmers and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. By fitting the normalized IF measurement data to the heat balance equations, the escape time as a fitting parameter has been deduced and amounts to 45 ps for the HEB based on Si substrate as in contrast to a significantly reduced escape time of 18 ps for the HEB utilizing the GaN buffer layer under the assumption that no additional electron diffusion has taken place. This study indicates a high phonon transmissivity of the NbN-to-GaN interface and a prospective increase of IF bandwidth for HEB made of NbN on GaN buffer layers, which is desirable for future THz HEB heterodyne receivers.
Address
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2156-3446 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1330
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Author Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G.
Title Photon absorption near the gap frequency in a hot electron bolometer Type Journal Article
Year (up) 2017 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 27 Issue 4 Pages 1-4
Keywords NBN HEB mixer
Abstract The superconducting energy gap is a fundamental characteristic of a superconducting film, which, together with the applied pump power and the biasing setup, defines the instantaneous resistive state of the Hot Electron Bolometer (HEB) mixer at any given bias point on the I-V curve. In this paper we report on a series of experiments, in which we subjected the HEB to radiation over a wide frequency range along with parallel microwave injection. We have observed three distinct regimes of operation of the HEB, depending on whether the radiation is above the gap frequency, far below it or close to it. These regimes are driven by the different patterns of photon absorption. The experiments have allowed us to derive the approximate gap frequency of the device under test as about 585 GHz. Microwave injection was used to probe the HEB impedance. Spontaneous switching between the superconducting (low resistive) state and a quasi-normal (high resistive) state was observed. The switching pattern depends on the particular regime of HEB operation and can assume a random pattern at pump frequencies below the gap to a regular relaxation oscillation running at a few MHz when pumped above the gap.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1558-2515 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1331
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Author Pentin, Ivan; Finkel, Matvey; Maslennikov, Sergey; Vakhtomin, Yuri; Smirnov, Konstantin; Kaurova, Nataliya; Goltsman, Gregory
Title Superconducting hot-electron-bolometer mixers for the mid-IR Type Journal Article
Year (up) 2017 Publication Rus. J. Radio Electron. Abbreviated Journal Rus. J. Radio Electron.
Volume Issue 10 Pages
Keywords IR NbN HEB mixers
Abstract The work presents the result of development of the NbN superconducting hot-electron-bolometer (HEB) mixer. The sensitive element of the mixer is directly coupled to mid-IR radiation, and doesn’t have planar metallic antenna. Investigations of noise characteristics of NbN HEB mixer were performed at the frequency 28.4 THz (λ = 10.6 µm) by using gas-discharge CW CO2-laser without consideration of optical and electrical losses in the heterodyne receiver. The noise temperature of NbN HEB mixer with the size of the sensitive element 10 µm × 10 µm was 2320 K (~ 1.5hν/kB) at the heterodyne frequency of 28.4 THz. The noise temperature was determined by measuring the Y-factor taking into account the term which describes fluctuations of zero-point oscillations in accordance with the fluctuation-dissipation theorem of Calle-Welton. Isothermal method was used to estimate the absorbed heterodyne radiation power which was 9 µW at the optimal operating point for the minimum noise temperature of NbN HEB mixer.
Address
Corporate Author Thesis
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Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1684-1719 ISBN Medium
Area Expedition Conference
Notes http://jre.cplire.ru/jre/oct17/9/abstract.html (Russian) Гетеродинный приемник со сверхпроводниковым смесителем на эффекте электронного разогрева для среднего инфракрасного диапазона Approved no
Call Number Serial 1747
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Author Bandurin, D. A.; Svintsov, D.; Gayduchenko, I.; Xu, S. G.; Principi, A.; Moskotin, M.; Tretyakov, I.; Yagodkin, D.; Zhukov, S.; Taniguchi, T.; Watanabe, K.; Grigorieva, I. V.; Polini, M.; Goltsman, G. N.; Geim, A. K.; Fedorov, G.
Title Resonant terahertz detection using graphene plasmons Type Journal Article
Year (up) 2018 Publication Nat. Commun. Abbreviated Journal Nat. Commun.
Volume 9 Issue Pages 5392 (1 to 8)
Keywords THz, graphene plasmons
Abstract Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically tunable plasmons. Here we demonstrate plasmon-assisted resonant detection of terahertz radiation by antenna-coupled graphene transistors that act as both plasmonic Fabry-Perot cavities and rectifying elements. By varying the plasmon velocity using gate voltage, we tune our detectors between multiple resonant modes and exploit this functionality to measure plasmon wavelength and lifetime in bilayer graphene as well as to probe collective modes in its moire minibands. Our devices offer a convenient tool for further plasmonic research that is often exceedingly difficult under non-ambient conditions (e.g. cryogenic temperatures) and promise a viable route for various photonic applications.
Address Physics Department, Moscow State University of Education (MSPU), Moscow, Russian Federation, 119435. fedorov.ge@mipt.ru
Corporate Author Thesis
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2041-1723 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1148
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