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Tarkhov, M.; Claudon, J.; Poizat, J. Ph.; Korneev, A.; Divochiy, A.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Semenov, A. V.; Gol'tsman, G. |
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Title |
Ultrafast reset time of superconducting single photon detectors |
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Journal Article |
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2008 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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92 |
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24 |
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241112 (1 to 3) |
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SSPD, SNSPD |
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0003-6951 |
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429 |
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Dorenbos, S. N.; Reiger, E. M.; Perinetti, U.; Zwiller, V.; Zijlstra, T.; Klapwijk, T. M. |
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Title |
Low noise superconducting single photon detectors on silicon |
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Journal Article |
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2008 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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93 |
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13 |
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131101 |
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0003-6951 |
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RPLAB @ s @ |
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436 |
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Fu, K.; Zannoni, R.; Chan, C.; Adams, S. H.; Nicholson, J.; Polizzi, E.; Yngvesson, K. S. |
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Title |
Terahertz detection in single wall carbon nanotubes |
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Journal Article |
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Year |
2008 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
92 |
Issue |
3 |
Pages |
033105 |
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HEB, single wall, carbon nanotube, CNT, SWNT, SWCNT, terahertz detection, THz |
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It is reported that terahertz radiation from 0.69 to 2.54 THz has been sensitively detected in a device consisting of bundles of carbon nanotubes containing single wall metallic carbon nanotubes, quasioptically coupled through a lithographically fabricated antenna, and a silicon lens. The measured data are consistent with a bolometric detection process in the metallic tubes and the devices show promise for operation well above 4.2 K. |
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0003-6951 |
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NEP is not shown |
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566 |
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Li, T. F.; Pashkin, Yu. A.; Astafiev, O.; Nakamura, Y.; Tsai, J. S.; Im, H. |
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High-frequency metallic nanomechanical resonators |
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Journal Article |
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2008 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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92 |
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043112(1)-043112(3) |
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nanomechanical resonator, polycrystalline metal films |
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We developed a technology to fabricate fully metallic doubly clamped beams working as nanomechanical resonators. Measured with a magnetomotive detection scheme, the beams, made of polycrystalline metal films, show as good quality as previously reported ones made of single crystal materials, such as Si, GaAs, AlN, and SiC. Our method is compatible with the conventional fabrication process for nanoscale electronic circuits and thus offers a possibility of easily integrating the beams into superconducting charge and flux qubits and single-electron transistors as well as coupling them to coplanar waveguide resonators. |
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no |
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621 |
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Sekine, Norihiko; Hosako, Iwao |
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Intensity modulation of terahertz quantum cascade lasers under external light injection |
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Journal Article |
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2009 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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95 |
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201106(1-3) |
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QCL modulation, THz, terahertz |
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We investigated the light-current characteristics of terahertz (THz) quantum cascade lasers under external light injection, which excites interband transitions in the active materials. It was found that the amount of reduction in the THz power was constant for all injection currents above threshold, and the dependence of the reduction amount on the wavelength of the external light was observed to show a resonancelike feature. The dominant intensity modulation mechanism was found to be the loss change caused by interband transitions in the active region. Further, the effective coupling efficiency plays an important role in the intensity modulation. |
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630 |
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Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X. |
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Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers |
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Journal Article |
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Year |
2009 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
95 |
Issue |
19 |
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3 |
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2DEG |
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The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s. |
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RPLAB @ gujma @ |
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673 |
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Yates, S. J. C.; Baryshev, A. M.; Baselmans, J. J. A.; Klein, B.; Güsten, R. |
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Fast Fourier transform spectrometer readout for large arrays of microwave kinetic inductance detectors |
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Journal Article |
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2009 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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95 |
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4 |
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3 |
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Microwave kinetic inductance detectors have great potential for large, very sensitive detector arrays for use in, for example, submillimeter imaging. Being intrinsically readout in the frequency domain, they are particularly suited for frequency domain multiplexing allowing ~1000 s of devices to be readout with one pair of coaxial cables. However, this moves the complexity of the detector from the cryogenics to the warm electronics. We present here the concept and experimental demonstration of the use of fast Fourier transform spectrometer readout, showing no deterioration of the noise performance compared to the low noise analog mixing while allowing high multiplexing ratios. |
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RPLAB @ gujma @ |
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697 |
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Santavicca,D.F.; Reulet,B.; Karasik,B.S.; Pereverzev,S.V.; Olaya, D.; Gershenson, M.E.; Frunzio, L.; Prober, D.E. |
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Energy resolution of terahertz single-photon-sensitive bolometric detectors |
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2010 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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96 |
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8 |
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083505 - 083505-3 |
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We report measurements of the energy resolution of ultrasensitive superconducting bolometric detectors. The device is a superconducting titanium nanobridge with niobium contacts. A fast microwave pulse is used to simulate a single higher-frequency photon, where the absorbed energy of the pulse is equal to the photon energy. This technique allows precise calibration of the input coupling and avoids problems with unwanted background photons. Present devices have an intrinsic full-width at half-maximum energy resolution of approximately 23 THz, near the predicted value due to intrinsic thermal fluctuation noise. |
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RPLAB @ akorneev @ |
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601 |
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Zhang, W.; Khosropanah, P.; Gao, J. R.; Kollberg, E. L.; Yngvesson, K. S.; Bansal, T.; Barends, R.; Klapwijk, T. M. |
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Title |
Quantum noise in a terahertz hot electron bolometer mixer |
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Journal Article |
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2010 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
96 |
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11 |
Pages |
111113-(1-3) |
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HEB mixer, quantum limit, quantum noise, vacuum box, THz, Terahertz |
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We have measured the noise temperature of a single, sensitive superconducting NbN hot electron bolometer (HEB) mixer in a frequency range from 1.6 to 5.3 THz, using a setup with all the key components in vacuum. By analyzing the measured receiver noise temperature using a quantum noise (QN) model for HEB mixers, we confirm the effect of QN. The QN is found to be responsible for about half of the receiver noise at the highest frequency in our measurements. The beta-factor (the quantum efficiency of the HEB) obtained experimentally agrees reasonably well with the calculated value. |
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624 |
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Terai, Hirotaka; Miki, Shigehito; Yamashita, Taro; Makise, Kazumasa; Wang, Zhen |
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Demonstration of single-flux-quantum readout operation for superconducting single-photon detectors |
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Journal Article |
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2010 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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97 |
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11 |
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3 |
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SSPD |
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A readout circuit using superconducting single-flux-quantum (SFQ) circuits has been developed to realize an independently addressable array of superconducting single-photon detectors (SSPDs). We tested the SFQ readout circuits by connecting with SSPDs. The error rates of readout circuits were below 10–5 for input signal amplitude of greater than 18.2 μA. Detection efficiencies (DEs) for single-photon incidents were measured both with and without the connection of a readout circuit. The observed DEs traced almost the same curves regardless of the connection of the readout circuit, except that the SSPD is likely to latch by connecting the readout circuit. |
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RPLAB @ gujma @ |
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654 |
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Tanner, M. G.; Natarajan, C. M.; Pottapenjara, V. K.; O'Connor, J. A.; Warburton, R. J.; Hadfield, R. H.; Baek, B.; Nam, S.; Dorenbos, S. N.; Bermúdez Ureña, E.; Zijlstra, T.; Klapwijk, T. M.; Zwiller, V. |
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Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon |
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Journal Article |
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2010 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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96 |
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22 |
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3 |
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SNSPD |
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Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter. |
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RPLAB @ gujma @ |
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655 |
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Gaggero, A.; Nejad, S. Jahanmiri; Marsili, F.; Mattioli, F.; Leoni, R.; Bitauld, D.; Sahin, D.; Hamhuis, G. J.; Nötzel, R.; Sanjines, R.; Fiore, A. |
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Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications |
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2010 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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97 |
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15 |
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3 |
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SSPD |
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We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K. |
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Mannino, Giovanni; Spinella, Corrado; Ruggeri, Rosa; La Magna, Antonino; Fisicaro, Giuseppe; Fazio, Enza; Neri, Fortunato; Privitera, Vittorio |
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Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation |
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2010 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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97 |
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2 |
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3 |
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Annealing |
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We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ~80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing. |
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Annealing |
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RPLAB @ gujma @ |
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691 |
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Kataoka, T; Kajikawa, K.; Kitagawa, J.; Kadoya, Y; Takemura, Y. |
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Improved sensitivity of terahertz detection by GaAs photoconductive antennas excited at 1560 nm |
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2010 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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97 |
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201110 (1-3) |
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photoconductive antenna (PCA) |
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The terahertz detection by photoconductive antennas (PCAs) based on low-temperature grown (LTG) GaAs with 1.5 μm pulse excitation was revisited. We found that the detection efficiency can be improved by a factor of 10 (20 dB) by reducing the excitation spot size and the gap length of the PCA, maintaining the low noise feature of the PCA on LTG GaAs. As a result, the signal-to-noise ratio higher than 50 dB was obtained at a reasonable incident power of 9.5 mW, suggesting that the scheme is promising for the detection of terahertz waves in practical time domain systems. |
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Elvira, D.; Michon, A.; Fain, B.; Patriarche, G.; Beaudoin, G.; Robert-Philip, I.; Vachtomin, Y.; Divochiy, A. V.; Smirnov, K. V.; Gol’tsman, G. N.; Sagnes, I.; Beveratos, A. |
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Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm |
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2010 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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97 |
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13 |
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131907 (1 to 3) |
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SSPD, SNSPD, InAsP/InP quantum dots |
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By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364. |
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