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Cherednichenko, S.; Drakinskiy, V. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Low noise hot-electron bolometer mixers for terahertz frequencies |
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Journal Article |
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2008 |
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J. Low Temp. Phys. |
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J. Low Temp. Phys. |
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151 |
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1-2 |
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575-579 |
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HEB, mixer, gain bandwidth, MgB2 |
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Hot-electron bolometer (HEB) mixers are used in many low noise heterodyne radio astronomical receivers. Their noise temperature is at the level of 10–15 times the quantum limit. However, their gain bandwidth is a serious limiting factor. Here we review the state of the art of the HEB mixers gain bandwidth for different materials and substrates. We compare the gain bandwidth of HEB mixers made on bulk substrates and thin membranes. Finally, results for MgB2 thin films for broadband HEB mixers are discussed. |
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0022-2291 |
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RPLAB @ lobanovyury @ |
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553 |
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Tretyakov, I. V.; Ryabchun, S. A.; Maslennikov, S. N.; Finkel, M. I.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Gol'tsman, G.N. |
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Title |
NbN HEB mixer: fabrication, noise temperature reduction and characterization |
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Conference Article |
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2008 |
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Proc. Basic problems of superconductivity |
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HEB, mixer, noise temperature, conversion gain bandwidth |
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We demonstrate that in the terahertz region superconducting hot-electron mixers offer the lowest noise temperature, opening the possibility of using HTS's in the future to fabricate these devices. Specifically, a noise temperature of 950 K was measured for the receiver operating at 2.5 THz with a NbN HEB mixer, and a gain bandwidth of 6 GHz was measured at 300 GHz near Tc for the same mixer. |
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Moscow-Zvenigorod |
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591 |
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Cherednichenko, Sergey; Drakinskiy, Vladimir; Berg, Therese; Kollberg, Erik L.; Angelov, Iltcho |
![goto web page (via DOI) doi](img/doi.gif)
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The direct detection effect in the hot-electron bolometer mixer sensitivity calibration |
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2007 |
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IEEE Trans. Microw. Theory Techn. |
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55 |
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3 |
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504-510 |
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HEB, mixer, direct detection effect |
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0018-9480 |
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RPLAB @ lobanovyury @ |
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555 |
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Gao, J. R.; Hajenius, M.; Yang, Z. Q.; Baselmans, J. J. A.; Khosropanah, P.; Barends, R.; Klapwijk, T. M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Terahertz superconducting hot electron bolometer heterodyne receivers |
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Journal Article |
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2007 |
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IEEE Trans. Appl. Supercond. |
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17 |
Issue |
2 |
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252-258 |
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HEB, mixer, direct detection effect |
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We highlight the progress on NbN hot electron bolometer (HEB) mixers achieved through fruitful collaboration between SRON Netherlands Institute for Space Research and Delft University of Technology, the Netherlands. This includes the best receiver noise temperatures of 700 K at 1.63 THz using a twin-slot antenna mixer and 1050 K at 2.84 THz using a spiral antenna coupled HEB mixer. The mixers are based on thin NbN films on Si and fabricated with a new contact-process and-structure. By reducing their areas HEB mixers have shown an LO power requirement as low as 30 nW. Those small HEB mixers have demonstrated equivalent sensitivity as those with large areas provided the direct detection effect due to broadband radiation is removed. To manifest that a HEB based heterodyne receiver can in practice be used at arbitrary frequencies above 2 THz, we demonstrate a 2.8 THz receiver using a THz quantum cascade laser (QCL) as local oscillator. |
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1051-8223 |
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RPLAB @ asmirn @ |
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557 |
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Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Krieg, J.-M.; Voronov, B.; Gol'tsman, G.; Desmaris, V. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes |
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Journal Article |
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2007 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
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Volume |
101 |
Issue |
12 |
Pages |
124508 (1 to 6) |
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Keywords |
HEB, mixer, membrane |
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The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach. |
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0021-8979 |
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560 |
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