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Yagoubov, P., Kroug, M., Merkel, H., Kollberg, E., Schubert, J., Hubers, H. W., et al. (1999). Hot electron bolometric mixers based on NbN films deposited on MgO substrates. In Inst. Phys. Conf. Ser. (Vol. 167, pp. 687–690). Barcelona, Spain.
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Huebers, H. - W., Schubert, J., Semenov, A., Gol’tsman, G. N., Voronov, B. M., Gershenzon, E. M., et al. (1999). NbN phonon-cooled hot-electron bolometer as a mixer for THz heterodyne receivers. In J. M. Chamberlain (Ed.), Proc. SPIE (Vol. 3828, pp. 410–416). Spie.
Abstract: We have investigated a phonon-cooled NbN hot electron bolometric (HEB) mixer in the frequency range from 0.7 THz to 5.2 THz. The device was a 3.5 nm thin film with an in- plane dimension of 1.7 X 0.2 micrometers 2 integrated in a complementary logarithmic spiral antenna. The measured DSB receiver noise temperatures are 1500 K, 2200 K, 2600 K, 2900 K, 4000 K, 5600 K and 8800 K. The sensitivity fluctuation, the long term stability, and the antenna pattern were measured and the suitability of the mixer for a practical heterodyne receiver is discussed.
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Yngvesson, K. S., Gerecht, E., Musante, C. F., Zhuang, Y., Ji, M., Goyette, T. M., et al. (1999). Low-noise HEB heterodyne receivers and focal plane arrays for the THz regime using NbN. In R. J. Hwu, & K. Wu (Eds.), Proc. SPIE (Vol. 3795, pp. 357–368). SPIE.
Abstract: We have developed prototype HEB receivers using thin film superconducting NbN devices deposited on silicon substrates. The devices are quasi-optically coupled through a silicon lens and a self-complementary log-specific toothed antenna. We measured DSB receiver noise temperatures of 500 K (13 X hf/2k) at 1.56 THz and 1,100 K (20 X hf/2k) at 2.24 THz. Noise temperatures are expected to fall further as devices and quasi-optical coupling methods are being optimized. The measured 3 dB IF conversion gain bandwidth for one device was 3 GHz, and it is estimated that the bandwidth over which the receiver noise temperature is within 3 dB of its minimum value is 6.5 GHz which is sufficient for a number of practical applications. We will discuss our latest results and give a detailed description of our prototype setup and experiments. We will also discuss our plans for developing focal plane arrays with tens of Hot Electron Bolometric mixer elements on a single silicon substrate which will make real time imaging systems in the THz region feasible.
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Cherednichenko, S., Ronnung, F., Gol'tsman, G., Gershenzon, E., & Winkler, D. (1999). YBa2Cu3O7-δ hot-electron bolometer with submicron dimensions. In Proc. 10th Int. Symp. Space Terahertz Technol. (pp. 181–189).
Abstract: Photoresponse of YBa2Cu3O7-δ hot-electron bolometers to modulated near-infrared radiation was studied at a modulation .frequenc y var y ing from 0.2 MHz to 2 GHz. Bolometers were _fabricated from a 50 12 M thick film and had in-plane areas of 10x10 , um 2 . 2x0.2 s um', 1x0.2 p.m', and 0.5x0.2 jim. We found that nonequilibrium phonons cool down more effectively for the bolometers with smaller area. For the smallest bolometer the bolometric component in the response is 10 dB less than for the largest one.
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Schubert, J., Semenov, A., Gol'tsman, G., Hübers, H. - W., Schwaab, G., Voronov, B., et al. (1999). Noise temperature and sensitivity of a NbN hot-electron mixer at frequencies from 0.7 THz to 5.2 THz. In Proc. 10th Int. Symp. Space Terahertz Technol. (pp. 190–199).
Abstract: We report on noise temperature measurements of a NbN phonon-cooled hot-electron bolometric mixer at different bias regimes. The device was a 3 nm thick bridge with in-plane dimensions of 1.7 x 0.2 gm 2 integrated in a complementary logarithmic spiral antenna. Measurements were performed at frequencies ranging from 0.7 THz up to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz) 5600 K (4.3 THz) and 8800 K (5.2 THz). Two bias regimes are possible in order to achieve low noise temperatures. But only one of them yields sensitivity fluctuations close to the theoretical limit.
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